An analogue to digital converter for converting the analogue output of a dual conversion gain pixel of an image sensor. The dual conversion gain pixel is operable to sequentially output a reset pixel value and a signal pixel value sequentially with both a first gain and a second gain different to the first gain. An image sensor comprising the analogue to digital converter, a system comprising the image sensor and a method are also described herein.

The invention concerns a structure of a CMOS active pixel, comprising a semi-conductive substrate (1) of a first type, at least one first photodiode operating in photovoltaic mode comprising a photovoltaic conversion area (2) defined by a doped area of a second type forming a PN junction with the substrate, said first photodiode re-emitting photoelectric charge carriers collected by the PN junction during the exposure of said first photodiode to a light, at least one second photodiode operating in integration mode and reverse-biased, said second photodiode comprising a charge accumulation area (3) defined by a doped area of the second type forming a PN junction with the substrate, said charge accumulation area being exposed to the charge carriers from the photovoltaic conversion area (2) in order to accumulate such charge carriers.

An electronic device and a control method therefor are provided. The electronic device includes a main lens, an image sensor, and at least one processor. When an input for acquiring an image is received, the at least one processor is configured to acquire, from the at least one main lens, a first image including an object by setting the image sensor to a first position corresponding to a first focal point for the object, acquire, from the at least one main lens, a second image including the object by setting the image sensor to a second position corresponding to a second focal point for the object, and combine the acquired first image and the acquired second image to generate a combined image. The first focal point and the second focal point are positions symmetrical to each other with reference to an on-focus position for the object.

A solid-state imaging apparatus includes pixel cells arranged in a matrix. Each pixel cell includes: a first photodiode that accumulates a signal charge generated by photoelectric conversion; a second photodiode that functions as a first holder that holds a signal charge that overflows from the first photodiode; a second holder; and a first transfer transistor that transfers the signal charge held in the second photodiode to the second holder.

Respective first signal holding units of a plurality of sets are commonly connected to an input node of an amplification unit of one set via a second transfer unit of a set to which the first signal holding unit corresponds, and respective second signal holding units of the plurality of sets are commonly connected to the input node of the amplification unit of one set via a fourth transfer unit of a set to which the second signal holding unit corresponds.

A method of correcting errors in the output of an image detector is disclosed. The method comprises measuring an output signal (V.sub.m) of a capacitor (C.sub.sh) holding a voltage corresponding to a signal detected by the image detector; comparing the value of output signal (V.sub.m) to the value of the previously measured output signal (V.sub.m−1) of the capacitor (C.sub.sh); calculating the error in the output signal (V.sub.m) using a predetermined correction factor and the difference between the value of the output signal (V.sub.m) and the value of the previously measured output signal (V.sub.m−1); and providing a corrected output value (V.sub.crt) in accordance with the calculated error. Detectors, methods of calibrating detectors, image correction apparatus and guidance systems comprising the detectors are also disclosed.

The present technology relates to a solid-state image sensor, an imaging device, and an electronic device capable of switching FD conversion efficiency in all pixels of a solid-state image sensor. A photodiode performs photoelectric conversion on incident light. A floating diffusion (FD) stores charge obtained by the photodiode. FD2, which is a second FD to which the capacity of an additional capacitor MIM is added, adds the capacity to the FD. The additional capacitor MIM is constituted by a first electrode formed by a wiring layer and a second electrode formed by a metallic light blocking film provided on a surface of a substrate on which the photodiode is formed. Switching between the FD and FD+FD2 allows switching of the FD conversion efficiency. The present technology is applicable to a CMOS image sensor.

An image sensor may have a pixel array, and the pixel array may include a plurality of image pixels that gather image data and a plurality of phase detection pixels that gather phase information. The phase detection pixels may be arranged in phase detection pixel blocks, and each phase detection pixel group may include edge pixels. The edge pixels of each phase detection pixel group may be covered by microlenses that also cover a portion of a center pixel. The pixel array may also include high dynamic range pixel blocks. Each high dynamic range pixel block may include pixels within the phase detection pixel block and other pixels (e.g., corner pixels). A subset of the plurality of image pixels in the pixel array may be arranged in pixel blocks. Each pixel block may include a phase detection pixel block and a high dynamic range pixel block.

A photoelectric conversion apparatus includes a pixel, an A/D conversion portion and an output circuit. The pixel includes first and second photoelectric conversion portions and an accumulation portion configured to accumulate a signal charge in a location other than the photoelectric conversion portions. The A/D conversion portion is configured to perform A/D conversions on signals based on signal charges generated in the photoelectric conversions. The output circuit reads out first and second signals based on first and second signal charges accumulated in the first and second photoelectric conversion portions during an electric charge accumulation period and a third signal based on a third signal charge generated in the second photoelectric conversion portion and accumulated in the accumulation portion during the electric charge accumulation period. Conversion periods for analog-to-digital conversion to be performed on at least two of the first, second, or third signals have different lengths.

A photoelectric conversion device according to one embodiment includes: a first substrate including a pixel that includes a photoelectric conversion element; and a second substrate including a first control unit that includes a first signal processing unit configured to process a signal from the pixel, the second substrate being stacked together with the first substrate. The signal from the pixel is output to a second signal processing unit disposed at a position different from a position of the first signal processing unit, a path through which the signal from the pixel is output to the first signal processing unit is different from a path through which the signal from the pixel is output to the second signal processing unit, and the first control unit is configured to control the pixel on the basis of the signal processed by the first signal processing unit.