Provided are a method and a device, for processing spectrum data of an image sensor. The method includes obtaining spectrum response signals corresponding to channels of spectrum data of light, the spectrum data being obtained from an object by an image sensor; determining a set of bases corresponding to the obtained spectrum response signals; performing, based on the determined set of bases, a change of basis on at least one basis included in the determined set of bases; and generating, by using a pseudo inverse, reconstructed spectrum data from the spectrum response signals on which the change of basis has been performed.

An imaging device including: a first photoelectric converter that generates a first signal by photoelectric conversion; a first transistor having a gate configured to be electrically coupled to the first photoelectric converter; a second photoelectric converter that generates a second signal by photoelectric conversion; a capacitor having a first terminal and a second terminal, the first terminal being configured to be electrically coupled to second photoelectric converter, a first potential being applied to the second terminal; and a switch element provided between the gate of the first transistor and the first terminal of the capacitor.

The present technique aims to provide a solid-state imaging device that reduces shading and color mixing between pixels. The present invention also provides a method of manufacturing the solid-state imaging device. The present technique further relates to a solid-state imaging device that enables provision of an electronic apparatus that uses the solid-state imaging device, a method of manufacturing the solid-state imaging device, and an electronic apparatus. The solid-state imaging device includes a substrate, pixels each including a photoelectric conversion unit formed in the substrate, and a color filter layer formed on the light incidence surface side of the substrate. The solid-state imaging device also includes a device isolating portion that is formed to divide the color filter layer and the substrate for the respective pixels, and has a lower refractive index than the refractive indexes of the color filter layer and the substrate.

An imaging device including: a photoelectric converter that generates a signal charge by photoelectric conversion of light; a semiconductor substrate; a charge accumulation region that is an impurity region of a first conductivity type in the semiconductor substrate, the charge accumulation region being configured to receive the signal charge; a first transistor that includes, as a source or a drain, a first impurity region of the first conductivity type in the semiconductor substrate; and a blocking structure that is located between the charge accumulation region and the first transistor. The blocking structure includes a second impurity region of a second conductivity type in the semiconductor substrate, the second conductivity type being different from the first conductivity type, and a first electrode that is located above the semiconductor substrate, the first electrode being configured to be applied with a first voltage.

An imaging device includes a pixel array with first and second pixels respectively having first and second conversion gains connected to row and column lines; a row driver determining a selection row line among the row lines; a readout circuit obtaining first and second pixel signals from first and second pixels connected to the selection row line; a column driver generating first and second image data from the first and second pixel signals; and an image signal processor using the first and second image data to generate an object image. The second pixels include an expansion capacitor connected between a floating diffusion node and a ground node. Exposure time of the first pixels is equal to or longer than exposure time of the second pixels. An area of a light receiving region of the first pixels is equal to an area of a light receiving region of the second pixels.

A pixel includes a photo-diode, an integration capacitor arranged to receive a photo current from the photo-diode and to store charge developed from the photo current; and an injection transistor disposed between the photo-diode and the integration capacitor that controls flow of the photo current from the photo-diode to the integration capacitor, the injection transistor having a gate, a source electrically coupled to the photo-diode at a first node, and a drain electrically coupled to the integration capacitor. The injection transistor is a silicon-oxide-nitride-oxide-silicon (SONOS) FET having its gate set to a SONOS gate voltage to control a detector bias voltage of the photo-diode at the first node.

To reduce crosstalk between adjacent pixels in an imaging element that acquires polarization information of a subject.

The imaging element is provided with a plurality of pixels, a separation region, and a non-separation region. Each of the plurality of pixels is provided with a polarization unit that polarizes incident light in a specific polarization direction and a photoelectric conversion unit that is formed in a semiconductor substrate and performs photoelectric conversion of the polarized incident light. The separation region is arranged in the semiconductor substrate and separates the plurality of pixels from each other. The non-separation region includes the semiconductor substrate in the clearance formed in the separation region in the vicinity of the corner of the pixel.

A photoelectric conversion device has a pixel including a photoelectric conversion circuit configured to output a signal in response to incidence of a photon. The photoelectric conversion device includes a first measurement circuit, a second measurement circuit, and a change circuit. The first measurement circuit is configured to measure the signal output from the pixel. The second measurement circuit is configured to measure a time from when the first measurement circuit starts to measure the signal until when a measurement value of the first measurement circuit reaches a first threshold. The change circuit is configured to change, for at least one of a plurality of the pixels, an upper measurement limit value up to which the signal is countable.

A photoelectric conversion device has a pixel including a photoelectric conversion circuit configured to output a signal in response to incidence of a photon. The photoelectric conversion device includes a first measurement circuit, a second measurement circuit, and a change circuit. The first measurement circuit is configured to measure the signal output from the pixel. The second measurement circuit is configured to measure a time from when the first measurement circuit starts to measure the signal until when a measurement value of the first measurement circuit reaches a first threshold. The change circuit is configured to change, for at least one of a plurality of the pixels, an upper measurement limit value up to which the signal is countable.

A camera agnostic core monitor for an enhanced flight vision system (EFVS) is disclosed. In embodiments, a structured light projector (SLP) generates and projects a precise geometric pattern or other like artifact, which is reflected by collimating elements into the EFVS optical path. Within the optical path, the EFVS focal plane array is illuminated by, and detects, the projected artifacts within the scene imagery captured for display by the EFVS. Image processors assess the presentation of the detected artifacts (e.g., position/orientation relative to the expected presentation of the detected artifact within the scene imagery) to verify that the displayed EFVS imagery is not misleading.