An imaging apparatus includes a pixel region including a plurality of pixels, and bias wiring laid on a light incident side of pixels to supply a bias from a power supply to the pixels in the pixel region via a second side defining the pixel region. The bias wiring includes first wiring portions and second wiring portions laid around the pixels. The first wiring portions are laid in a Y direction away from the second side, and the second wiring portions are laid in an X direction orthogonal to the Y direction. The first wiring portions include a light non-transmissive member. A resistance of the first wiring portion per pixel is smaller than that of the second wiring portion per pixel. A loss of light due to the second wiring portion is smaller than that of the light incident due to the first wiring portion.

An image capturing apparatus includes a plurality of pixels, a signal line connected to the plurality of pixels, and a limiter circuit configured to limit an amplitude of the signal at the signal line. A first pixel in the plurality of pixels sequentially outputs a noise signal, a focus detection signal, and an image capturing signal to the signal line. A second pixel in the plurality of pixels sequentially outputs a noise signal and an image capturing signal to the signal line, and wherein a potential of the signal at the signal line is set to a potential by the limiter circuit during a period after the second pixel outputs the noise signal and before the second pixel outputs the image capturing signal.

A system and method includes operations and steps for obtaining a moving endoscopic image. An optical device stream is received from an optical device by data processing hardware. The data processing hardware identify image frames of the image stream, each including a plurality of rows of pixels. The data processing hardware determines a row exposure value for each of the rows of pixels in each frame, and identifies a defective image frame having at least one overexposed row and a reference frame having a replacement row corresponding to the overexposed row. The data processing hardware modifies the defective image frame by replacing the overexposed row with the corresponding replacement row of the reference frame.

An imaging element incorporates a reading portion, a storage portion, a processing portion, and an output portion. The reading portion reads out image data obtained by imaging from a photoelectric conversion element at a first frame rate. The storage portion stores the image data read out from the photoelectric conversion element. The processing portion processes the image data. The output portion outputs the image data processed by the processing portion at a second frame rate. The processing portion detects first image data indicating a specific image from the image data stored in the storage portion. The output portion outputs second image data based on image data different from the first image data detected by the processing portion in the image data of a plurality of frames. The second frame rate is a frame rate lower than the first frame rate.

Video camera or video camera module, comprising an RGB image sensor, a computer processor adapted to perform pre-processing followed by video compression, and a dazzle detector, characterised in responding to dazzle in one colour channel by reducing values in that colour channel prior to compressing the video data. This has the advantage that in the event of laser dazzle that is specific to a colour channel, the compressed video data generated will retain more detail from the other colour channels compared to a conventional camera.

A photoelectric conversion device includes a plurality of pixels, a data line, and a receiving circuit. Each of plurality of pixels includes a photoelectric conversion unit, a processing circuit, and a pixel output circuit. The photoelectric conversion unit includes an avalanche photodiode that multiplies charge generated by an incident of photon by avalanche multiplication, and outputs a signal in accordance with the incident of photon. The processing circuit processes a signal output from the photoelectric conversion unit. The pixel output circuit controls an output of the signal processed by the processing circuit. The data line is connected to the plurality of pixels. The receiving circuit receives a pixel signal output from the plurality of pixels via the data line. An off-state leakage current of the transistor included in the receiving circuit is smaller than an off-state leakage current of the transistor included in the pixel output circuit.

A photoelectric conversion device includes a plurality of pixels, a data line, and a receiving circuit. Each of plurality of pixels includes a photoelectric conversion unit, a processing circuit, and a pixel output circuit. The photoelectric conversion unit includes an avalanche photodiode that multiplies charge generated by an incident of photon by avalanche multiplication, and outputs a signal in accordance with the incident of photon. The processing circuit processes a signal output from the photoelectric conversion unit. The pixel output circuit controls an output of the signal processed by the processing circuit. The data line is connected to the plurality of pixels. The receiving circuit receives a pixel signal output from the plurality of pixels via the data line. An off-state leakage current of the transistor included in the receiving circuit is smaller than an off-state leakage current of the transistor included in the pixel output circuit.

A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.