The present technology relates to a solid-state imaging device that can improve imaging quality by reducing variation in the voltage of a charge retention unit, a method of driving the solid-state imaging device, and an electronic apparatus. A first photoelectric conversion unit generates and accumulates signal charge by receiving light that has entered a pixel, and photoelectrically converting the light. A first charge retention unit retains the generated signal charge. A first output transistor outputs the signal charge in the first charge retention unit as a pixel signal, when the pixel is selected by the first select transistor. A first voltage control transistor controls the voltage of the output end of the first output transistor. The present technology can be applied to pixels in solid-state imaging devices, for example.

An imaging device includes pixel sensors. A drive-sense circuit is configured to generating a sensed signal corresponding to one of pixel sensors. The drive-sense circuit includes: a first conversion circuit configured to convert, a receive signal component of a sensor signal corresponding to the one of the pixel sensors into the sensed signal, wherein the sensed signal indicates a change in a capacitance associated with the one of the pixel sensors; a second conversion circuit configured to generate, based on the sensed signal, a drive signal component of the sensor signal corresponding to the one of the pixel sensors. The drive-sense circuit is further configured to generate other sensed signals corresponding to other ones of the pixel sensors for the other ones of the pixel sensors. A graphics processing module is configured to generate image data based on the sensed signal and the other sensed signals.

A method of removing fixed pattern noise, comprising: S01: performing a single-frame segmented exposure on a pixel array; S02: reading a signal of the pixel array, comprising: S021: performing a soft reset, so as to set the reset signal of the pixel unit to an intermediate voltage, and reading a differential reset signal; S022: performing a hard reset so as to set the reset signal of the pixel unit to a high voltage; S023: turning on a transmission MOS transistor to enable an exposure signal of the photodiode to be transmitted to the floating diffusion area, and reading a differential pixel transmission signal; S03: subtracting the differential reset signal from the differential pixel transmission signal to obtain an exposure signal with fixed pattern noise removed. Another method of removing fixed pattern noise and an image sensor are further provided.

Multi-cameras and in particular dual-cameras comprising a Wide camera comprising a Wide lens and a Wide image sensor, the Wide lens having a Wide effective focal length EFL.sub.W and a folded Tele camera comprising a Tele lens with a first optical axis, a Tele image sensor and an OPFE, wherein the Tele lens includes, from an object side to an image side, a first lens element group G1, a second lens element group G2 and a third lens element group G3, wherein at least two of the lens element groups are movable relative to the image sensor along the first optical axis to bring the Tele lens to two zoom states, wherein an effective focal length (EFL) of the Tele lens is changed from EFL.sub.T,min in one zoom state to EFL.sub.T,max in the other zoom state, wherein EFL.sub.Tmin>1.5×EFL.sub.W and wherein EFL.sub.Tmax>1.5×EFL.sub.Tmin.

A method of removing fixed pattern noise, comprising: S01: performing a single-frame segmented exposure on a pixel array; S02: reading a of the pixel array, comprising: S021: performing a soft reset, so as to set the reset signal of the pixel unit to an intermediate voltage, and reading a differential reset signal; S022: performing a hard reset so as to set the reset signal of the pixel unit to a high voltage; S023: turning on a transmission MOS transistor to enable an exposure signal of to photodiode to transmitted to the floating diffusion area, and reading a differential pixel transmission signal; S03: subtracting the differential reset signal from the differential pixel transmission signal to obtain an exposure signal with fixed pattern noise removed. Another method is removing fixed pattern noise and an image sensor are further provided.

A method of removing fixed pattern noise, comprising: S01: performing a single-frame segmented exposure on a pixel array; S02: reading a of the pixel array, comprising: S021: performing a soft reset, so as to set the reset signal of the pixel unit to an intermediate voltage, and reading a differential reset signal; S022: performing a hard reset so as to set the reset signal of the pixel unit to a high voltage; S023: turning on a transmission MOS transistor to enable an exposure signal of to photodiode to transmitted to the floating diffusion area, and reading a differential pixel transmission signal; S03: subtracting the differential reset signal from the differential pixel transmission signal to obtain an exposure signal with fixed pattern noise removed. Another method is removing fixed pattern noise and an image sensor are further provided.

A method for identifying and correcting fixed pattern noise includes capturing a focused image and an unfocused image via a variable focus lens. Fixed pattern noise represented in the unfocused image is filtered from the focused image. The unfocused image represents a low-pass filtered component of the focused image; subtracting the unfocused image from the focused image results in a high-pass and fixed pattern noise filtered focused image. Image capture and focus of the variable focus lens are synchronized to remove transitional frames from the image stream.

The present disclosure relates to a solid-state imaging device, a manufacturing method thereof, and an electronic apparatus, in which both oblique light characteristics and sensitivity can be improved. The solid-state imaging device includes pixel array unit in which a plurality of pixels is two-dimensionally arranged in a matrix and multi-stage light shielding walls are provided between the pixels. The present disclosure is applicable to, for example, a back-illuminated type solid-state imaging device and the like.

A pixel circuit includes: a charge storage circuit with first and second terminals thereof electrically coupled to first and second nodes, respectively; a reset circuit with first, second and third control terminals thereof electrically coupled to a reference signal line, a first initialization signal line, and a second initialization signal line, respectively, with fourth, fifth and sixth terminals thereof electrically coupled to the first node, a cathode of a photodiode and the second node, respectively; a photosensitive control circuit with first, second and third terminals thereof electrically coupled to an anode of the photodiode, the first node and the second node, respectively; an output circuit with first and second terminals thereof electrically coupled to a first level terminal and a fourth terminal of the photosensitive control circuit, respectively.

A calibrating device of calibrating a real-time image through a dithering process including a receiving unit, a storing unit, a displacing module, a computing module, and an outputting unit is disclosed. The receiving unit receives a real-time image from an image sensor and records a time parameter of the image. The storing unit stores a hash table that records multiple hash values used to calibrate the image. The displacing module shifts the multiple hash values in the hash table to generate an adjusted hash table. The computing module obtains a corresponding hash value from the adjusted hash table for each pixel point of the image in accordance with the coordinates of each pixel point, and respectively adds the corresponding hash value to the pixel value of each pixel point of the image to generate a calibrated image. The outputting unit outputs the calibrated image.