A Complementary Metal Oxide Semiconductor (CMOS) Image Sensor (CIS), includes a pixel circuit, a VSL circuit, and an amplifier. The pixel circuit may generate a reset voltage and a signal voltage, based on a power supply connected to the pixel circuit and/or intensity of light captured by the pixel circuit. The VSL circuit may store pixel information in a pixel load based on settling a voltage at the pixel load to the signal voltage and/or set the voltage at the pixel load to a pixel reset voltage based on settling the voltage at the pixel load to the reset voltage. The amplifier may generate a voltage, based on varying a resistance at an input of the amplifier, to enable the VSL circuit to store the pixel information and/or set the voltage at the pixel load to the pixel reset voltage.

A Complementary Metal Oxide Semiconductor (CMOS) Image Sensor (CIS), includes a pixel circuit, a VSL circuit, and an amplifier. The pixel circuit may generate a reset voltage and a signal voltage, based on a power supply connected to the pixel circuit and/or intensity of light captured by the pixel circuit. The VSL circuit may store pixel information in a pixel load based on settling a voltage at the pixel load to the signal voltage and/or set the voltage at the pixel load to a pixel reset voltage based on settling the voltage at the pixel load to the reset voltage. The amplifier may generate a voltage, based on varying a resistance at an input of the amplifier, to enable the VSL circuit to store the pixel information and/or set the voltage at the pixel load to the pixel reset voltage.

Bias circuit elements for applying voltages/currents to a photodetector are described. Bias circuit elements described are active devices, e.g. mosfets, directly connected to the photodetector signal point, which inject noise that will be amplified/integrated. Lowering 1/f noise in these bias devices uses multiple parallel mosfets and switching the parallel mosfets gates between a bias activation level signal and a voltage sufficient to drive the mosfet into accumulation Gate switching may be accomplished by at least two partially out of phase clocking signals, with at least one parallel mosfet applying bias while another is in accumulation in continuously switched time periods. Gate switching at a frequency higher than the imaging bandwidth, will have negligible effect on the image signal. During the accumulation phase traps present within the conducting channel of each MOSFET will be depopulated, essentially resetting the MOSFET's 1/f noise, allowing for long integration times while controlling 1/f noise.

An imaging device includes a camera unit and a control unit. A first power source voltage is transferred from the control unit to the camera unit by a power source line and is input into the camera unit as a second power source voltage. The camera unit is configured to output a video signal, a reference signal having a reference voltage, and a voltage signal in accordance with the second power source voltage to a video signal line. The control unit is configured to measure a voltage value of each of the reference signal and the voltage signal. The control unit is configured to calculate a control value of the first power source voltage by using the measured voltage value.

An imaging device includes a camera unit and a control unit. A first power source voltage is transferred from the control unit to the camera unit by a power source line and is input into the camera unit as a second power source voltage. The camera unit is configured to output a video signal, a reference signal having a reference voltage, and a voltage signal in accordance with the second power source voltage to a video signal line. The control unit is configured to measure a voltage value of each of the reference signal and the voltage signal. The control unit is configured to calculate a control value of the first power source voltage by using the measured voltage value.

An image sensing device includes an image sensing circuit, a voltage supply grid, bitlines, and a control circuit. The image sensing circuit includes pixels arranged in rows and columns. Each one of the bitlines is coupled to a corresponding one of the columns. The voltage supply grid is coupled to the pixels. The control circuit is coupled to output at least a row select signal and a transfer signal to the rows. Each one of the rows is selectively coupled to the bitlines to selectively output image data signals in response to the row select signal and the transfer signal. Each one of the rows is further selectively coupled to the bitlines to selectively clamp the bitlines in response to the row select signal and the transfer signal. Each one of the rows is selectively decoupled from the bitlines in response to the row select signal.

An image sensing device includes an image sensing circuit, a voltage supply grid, bitlines, and a control circuit. The image sensing circuit includes pixels arranged in rows and columns. Each one of the bitlines is coupled to a corresponding one of the columns. The voltage supply grid is coupled to the pixels. The control circuit is coupled to output at least a row select signal and a transfer signal to the rows. Each one of the rows is selectively coupled to the bitlines to selectively output image data signals in response to the row select signal and the transfer signal. Each one of the rows is further selectively coupled to the bitlines to selectively clamp the bitlines in response to the row select signal and the transfer signal. Each one of the rows is selectively decoupled from the bitlines in response to the row select signal.

An image sensor includes a pixel configured to generate a pixel signal, using an analog signal processing voltage, a ramp signal generator configured to generate a ramp signal, using the analog signal processing voltage, a bias voltage generator configured to generate a bias voltage, using the analog signal processing voltage, and a noise compensator configured to generate a noise component, using a digital signal processing voltage and the analog signal processing voltage, and add the generated noise component to the generated bias voltage. The image sensor further includes a conversion circuit configured to generate a reference voltage, based on the generated ramp signal and the bias voltage to which the noise component is added, and generate an image signal by performing analog-to-digital conversion on the generated pixel signal, based on the generated reference voltage.

An image sensor including: a pixel array including first and second pixels connected to a column line; a row driver to provide the first pixel with a first selection signal based on a clamp voltage, and to provide the second pixel with a second selection signal based on a selection voltage, wherein the first pixel outputs a first output voltage in response to the first selection signal, and the second pixel outputs a second output voltage in response to the second selection signal, wherein the first and second output voltages are output as a pixel signal through the column line, wherein a voltage of the pixel signal corresponds to a voltage obtained by clamping the second output voltage with the first output voltage, and wherein a change in a voltage level of the first output voltage due to a temperature is compensated for b the clamp voltage.

An image sensor including: a pixel array including first and second pixels connected to a column line; a row driver to provide the first pixel with a first selection signal based on a clamp voltage, and to provide the second pixel with a second selection signal based on a selection voltage, wherein the first pixel outputs a first output voltage in response to the first selection signal, and the second pixel outputs a second output voltage in response to the second selection signal, wherein the first and second output voltages are output as a pixel signal through the column line, wherein a voltage of the pixel signal corresponds to a voltage obtained by clamping the second output voltage with the first output voltage, and wherein a change in a voltage level of the first output voltage due to a temperature is compensated for b the clamp voltage.