A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.

A unit pixel includes a first photoelectric conversion unit configured to generate first charges in response to a first incident light, a first transfer transistor connected between the first photoelectric conversion unit and a first node, a connecting transistor connected between a second node and the first node, a second photoelectric conversion unit configured to generate second charges in response to a second incident light, a second transfer transistor connected between a second photoelectric conversion unit and a third node, a switch transistor connected between the third node and the second node, a source follower connected to the first node, a selection transistor connected to the source follower, an overflow transistor connecting the first photoelectric conversion unit and a power supply voltage, and a comparator configured to turn on the overflow transistor.

A unit pixel includes a first photoelectric conversion unit configured to generate first charges in response to a first incident light, a first transfer transistor connected between the first photoelectric conversion unit and a first node, a connecting transistor connected between a second node and the first node, a second photoelectric conversion unit configured to generate second charges in response to a second incident light, a second transfer transistor connected between a second photoelectric conversion unit and a third node, a switch transistor connected between the third node and the second node, a source follower connected to the first node, a selection transistor connected to the source follower, an overflow transistor connecting the first photoelectric conversion unit and a power supply voltage, and a comparator configured to turn on the overflow transistor.

The photoelectric conversion device includes a pixel including a photoelectric conversion unit that outputs a pulse in response to incidence of a photon and a pulse counting unit that counts the pulse. The pulse counting unit includes first and second counters, a selection circuit for selecting a signal input to the first and second counters, and a control unit. The control unit controls the selection circuit to perform a first connection mode in which a counter of a first number of bits is configured by the first and second counters, and a second connection mode in which a counter of a second number of bits smaller than the first number of bits is configured by at least one of the first and second counters. The second connection mode includes a third connection mode in which pulses are counted in parallel by the first and second counters.

Solid-state imaging devices are disclosed. In one example, a solid-state imaging device includes a conversion circuit connected to a vertical signal line of a pixel array, a voltage generation circuit that outputs a predetermined voltage, and a reference voltage generation circuit that receives the predetermined voltage and outputs a reference voltage. The reference voltage generation circuit includes an operational amplifier that amplifies the predetermined voltage and outputs the reference voltage, a capacitive element having one end connected to an input of the operational amplifier that is different from an input that receives the predetermined voltage, a first switching circuit that connects the other end of the capacitive element to either the predetermined voltage output from the voltage generation circuit or a feedback loop of the operational amplifier, and a second switching circuit that selectively connects the one end of the capacitive element to the feedback loop of the operational amplifier.

A vision sensor includes a pixel array including a plurality of pixels, a voltage generator configured to generate a reset bias voltage provided to each of the plurality of pixels, a temperature comparing circuit configured to output a switching setting value according to a result of comparing temperature information with at least one reference temperature value, and a voltage level controller configured to generate a reset bias setting signal based on the switching setting value. The reset bias setting signal adjusts a voltage level of the reset bias voltage.

There is provided a solid-state image pickup element including: a photodiode configured to convert incident light into a photocurrent; an amplification transistor configured to amplify a voltage between a gate having a potential depending on the photocurrent and a source having a predetermined reference potential and output the amplified voltage from a drain; and a potential supply section configured to supply an anode of the photodiode and a back-gate of the amplification transistor with a predetermined potential lower than the reference potential.

An image sensing device includes an image sensor suitable for correcting depth information based on a control signal, and for generating image data according to the depth information, and a controller suitable for analyzing an error of the depth information, and for generating the control signal, based on first and second cycle signals provided from the image sensor.

There is no risk of generating unnecessary events.

This imaging device comprises: a photoelectric conversion unit that has a plurality of photoelectric conversion elements for performing photoelectric conversion to generate an electric signal; a setting unit that sets a threshold value according to a noise level in a predetermined region among the plurality of photoelectric conversion elements; and a first detection unit that detects a detection signal in a case where the amount of change in the electric signal generated by the plurality of photoelectric conversion elements exceeds the threshold value.

There is no risk of generating unnecessary events.

This imaging device comprises: a photoelectric conversion unit that has a plurality of photoelectric conversion elements for performing photoelectric conversion to generate an electric signal; a setting unit that sets a threshold value according to a noise level in a predetermined region among the plurality of photoelectric conversion elements; and a first detection unit that detects a detection signal in a case where the amount of change in the electric signal generated by the plurality of photoelectric conversion elements exceeds the threshold value.