To suppress voltage variations due to transistor switching noise in a solid-state image sensor including a transistor that initializes a differentiating circuit. A capacitance supplies a charge corresponding to an amount of variation in a predetermined pixel voltage to a predetermined input terminal. A voltage output unit outputs, as an output voltage, a voltage corresponding to an input voltage at the input terminal from a predetermined output terminal. A reset transistor supplies one of a positive charge or a negative charge during a predetermined period to control the output voltage to an initial value in a case where initialization is instructed. A charge supply unit supplies the other of the positive charge or the negative charge when the predetermined period elapses.

To suppress voltage variations due to transistor switching noise in a solid-state image sensor including a transistor that initializes a differentiating circuit. A capacitance supplies a charge corresponding to an amount of variation in a predetermined pixel voltage to a predetermined input terminal. A voltage output unit outputs, as an output voltage, a voltage corresponding to an input voltage at the input terminal from a predetermined output terminal. A reset transistor supplies one of a positive charge or a negative charge during a predetermined period to control the output voltage to an initial value in a case where initialization is instructed. A charge supply unit supplies the other of the positive charge or the negative charge when the predetermined period elapses.

A vehicular rear backup system includes a rear backup digital camera disposed at a vehicle and a display device having a video display screen disposed in an interior cabin of the vehicle and viewable by the driver of the vehicle. Rear backup video images that are derived from image data captured by the rear backup digital camera are displayed on the video display screen no later than two seconds after the driver of the vehicle first changes propulsion of the vehicle during a new ignition cycle to reverse mode to commence a first backup event. Until the first backup event is completed, the video display screen displays rear backup video images. During a backup event of the vehicle, image data captured by the rear backup digital camera is provided to and is processed by an image processor of the system to detect presence of an object rearward of the vehicle.

A vehicular rear backup system includes a rear backup digital camera disposed at a vehicle and a display device having a video display screen disposed in an interior cabin of the vehicle and viewable by the driver of the vehicle. Rear backup video images that are derived from image data captured by the rear backup digital camera are displayed on the video display screen no later than two seconds after the driver of the vehicle first changes propulsion of the vehicle during a new ignition cycle to reverse mode to commence a first backup event. Until the first backup event is completed, the video display screen displays rear backup video images. During a backup event of the vehicle, image data captured by the rear backup digital camera is provided to and is processed by an image processor of the system to detect presence of an object rearward of the vehicle.

Fabrication processing is executed in a chip of an image sensor. An image capturing device includes an image capturing unit (11) mounted on a vehicle and configured to generate image data by performing image capturing of a peripheral region of the vehicle, a scene recognition unit (214) configured to recognize a scene of the peripheral region based on the image data, and a drive control unit (12) configured to control drive of the image capturing unit based on the scene recognized by the scene recognition unit.

An electronic device includes a first transistor, a second transistor, and a sensing circuit coupled to at least one of the first transistor and the second transistor. The sensing circuit includes a diode, a third transistor, and a fourth transistor. The diode has a first terminal. The third transistor has a first terminal and a second terminal. The first terminal of the third transistor is coupled to the first terminal of the diode. The fourth transistor has a first terminal coupled to the second terminal of the third transistor, and a second terminal coupled to a data driver.

The present disclosure relates to a solid-state imaging device, a manufacturing method thereof, and an electronic apparatus, in which both oblique light characteristics and sensitivity can be improved. The solid-state imaging device includes pixel array unit in which a plurality of pixels is two-dimensionally arranged in a matrix and multi-stage light shielding walls are provided between the pixels. The present disclosure is applicable to, for example, a back-illuminated type solid-state imaging device and the like.

A radiation detector includes control and data lines extending respectively in mutually-orthogonal first and second directions, photoelectric conversion parts respectively in regions defined by the control and data lines, noise detecting parts outside a region including the photoelectric conversion parts, a control circuit inputting control signals to first and second thin film transistors located respectively in the photoelectric conversion and noise detecting parts, a signal detection circuit reading image data and noise signals respectively from the photoelectric conversion and noise detecting parts, and an image configuration circuit configuring a radiation image based on the signals that are read. The signals from the photoelectric conversion parts adjacent to the noise detecting parts are not read and/or are not used by the image configuration circuit when configuring the radiation image, and/or the photoelectric conversion parts adjacent to the noise detecting parts are not electrically connected with the control and/or signal detection circuits.

An image sensor includes a pixel array including a first pixel and a second pixel which are connected to a same column line, the first pixel including 2N sub-pixels sharing a first floating diffusion node and the second pixel including 2N sub-pixels sharing a second floating diffusion node, wherein N is a positive integer greater than or equal to two, a timing generator configured to change a reset order and a readout order of 4N sub-pixels included in the first pixel and the second pixel, according to an exposure time setting value, and output a row address according to the changed orders, and a row driver configured to drive the pixel array based on the row address.

A solid-state imaging device includes a transfer transistor and an element separation section. The transfer transistor includes a vertical gate electrode. At least a portion of the element separation section is disposed apart from the vertical gate electrode with a semiconductor layer interposed in between. The semiconductor layer has a high concentration of impurities of a first electrical conduction type. The element separation section includes an oxide film insulator.