A display apparatus capable of image capturing with high sensitivity is provided. The display apparatus is configured to include first to third switches, a first transistor, a second transistor, and a light-emitting/receiving element. The first switch is electrically connected to a gate of the first transistor. The second switch is positioned between one of a source and a drain of the first transistor and one electrode of the light-emitting/receiving element. The third switch is positioned between the one electrode of the light-emitting/receiving element and a gate of the second transistor. The other of the source and the drain of the first transistor is supplied with a first potential. The other electrode of the light-emitting/receiving element is supplied with a second potential. The light-emitting/receiving element has a function of emitting light of a first color and a function of receiving light of a second color.

An imaging device includes: a photoelectric converter whose sensitivity changes depending on a value of a voltage to be applied; and a voltage supply circuit that alternately supplies a first voltage and a second voltage, which is different from the first voltage, to the photoelectric converter, in which in a first frame period, a length of a first period from a first point in time at which the first voltage is switched to the second voltage until a second point in time at which the first voltage is switched to the second voltage subsequently to the first point in time differs from a length of a second period from the second point in time until a third point in time at which the first voltage is switched to the second voltage subsequently to the second point in time.

A solid-state imaging device includes a photoelectric conversion unit, a light shielding unit and a transfer transistor. The photoelectric conversion unit generates charges by photoelectrically converting light. The light shielding unit is formed by engraving a semiconductor substrate on which the photoelectric conversion unit is formed, so as to surround an outer periphery of the photoelectric conversion unit. The transfer transistor transfers charges generated in the photoelectric conversion unit. During a charge accumulation period in which charges are accumulated in the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a gate electrode of the transfer transistor. During a charge transfer period in which charges are transferred from the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a potential that attracts the charges is supplied to the gate electrode of the transfer transistor.

There is disclosed a semiconductor device including: a substrate; a plurality of first electrodes arranged away from each other with gaps on the substrate; a first intermediate layer arranged on each of the plurality of first electrode; a second intermediate layer, at least a part of which is arranged on each of the gaps of the plurality of first electrodes; a photoelectric conversion layer arranged on the first intermediate layer and the second intermediate layer; and a second electrode arranged on the photoelectric conversion layer. A content of oxygen on a molar basis in the second intermediate layer is higher than a content of oxygen on a molar basis in the first intermediate layer.

An image sensing device includes a first impurity region, a second impurity region, a floating diffusion region, and a transfer gate. The first impurity region is disposed in a semiconductor substrate and includes impurities with a first doping polarity, and the first impurity region generates photocharges by performing photoelectric conversion in response to incident light. The second impurity region is disposed over the first impurity region and has impurities with a second doping polarity different from the first doping polarity, and the second impurity region contacts with on some portions of the first impurity region. The floating diffusion region disposed over the second impurity region. The transfer gate couples to the floating diffusion region and transmits photocharges generated by the first impurity region to the floating diffusion region. The first impurity region is arranged not in contact with the transfer gate.

Provided is a multilayer imaging device capable of both securing a wide sensitive region and securing an accumulated amount of charges. An imaging device according to an embodiment comprises a pixel, the pixel including a photoelectric conversion layer (15); a first electrode (11) positioned close to a first surface of the photoelectric conversion layer and electrically connected to the photoelectric conversion layer; a second electrode (16) positioned on a second surface opposite to the first surface of the photoelectric conversion layer; a charge accumulation electrode (12) disposed close to the first surface of the photoelectric conversion layer and spaced apart from the first electrode in a direction parallel to the first surface; and a third electrode (200) disposed at a position to have a portion overlapping a gap between the first electrode and the charge accumulation electrode in a direction perpendicular to the first surface.

An event-driven sensor including: a pixel array; a column readout circuit coupled to column output lines of the pixel array, the column readout circuit comprising a plurality of groups of column register cells coupled in series with each other to propagate a first flag signal, wherein each column register cell is configured to activate a column event output signal when it receives the first flag signal while the detection of an event is indicated on the column output line; and a first bypassing circuit for each group of column register cells, the first bypassing circuits being coupled in series with each other to propagate the first flag signal.

Bias circuit elements for applying voltages/currents to a photodetector are described. Bias circuit elements described are active devices, e.g. mosfets, directly connected to the photodetector signal point, which inject noise that will be amplified/integrated. Lowering 1/f noise in these bias devices uses multiple parallel mosfets and switching the parallel mosfets gates between a bias activation level signal and a voltage sufficient to drive the mosfet into accumulation Gate switching may be accomplished by at least two partially out of phase clocking signals, with at least one parallel mosfet applying bias while another is in accumulation in continuously switched time periods. Gate switching at a frequency higher than the imaging bandwidth, will have negligible effect on the image signal. During the accumulation phase traps present within the conducting channel of each MOSFET will be depopulated, essentially resetting the MOSFET's 1/f noise, allowing for long integration times while controlling 1/f noise.

The quantum efficiency can be improved. A solid-state imaging device according to an embodiment includes: a plurality of pixels (110) arranged in a matrix, in which each of the pixels includes a first semiconductor layer (35), a photoelectric conversion section (PD1) disposed on the first semiconductor layer on a side of a first surface, an accumulation electrode (37) disposed on the first semiconductor layer close to a side of a second surface on a side opposite to the first surface, a wiring (61, 62, 63, 64) extending from the second surface of the first semiconductor layer, a floating diffusion region (FD1) connected to the first semiconductor layer via the wiring, and a first gate (11) that forms a potential barrier in a charge flow path from the first semiconductor layer to the floating diffusion region via the wiring.

An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.