An image sensor includes: a pixel that generates a pixel signal based upon incident light having entered therein; and a generation unit that includes a first input unit to which the pixel signal is input, a second input unit to which a first reference signal with a shifting voltage is input, and an output unit that outputs an output signal generated based upon the pixel signal and the first reference signal, wherein: the generation unit further includes a first capacitance disposed between the first input unit and the output unit, a second capacitance disposed between the second input unit and the output unit, and a third capacitance connected to either one of the first capacitance and the second capacitance.

An image sensor includes: a pixel that generates a pixel signal based upon incident light having entered therein; and a generation unit that includes a first input unit to which the pixel signal is input, a second input unit to which a first reference signal with a shifting voltage is input, and an output unit that outputs an output signal generated based upon the pixel signal and the first reference signal, wherein: the generation unit further includes a first capacitance disposed between the first input unit and the output unit, a second capacitance disposed between the second input unit and the output unit, and a third capacitance connected to either one of the first capacitance and the second capacitance.

In one example, an imaging device including a plurality of pixel circuits, a first control line, a second control line, a first voltage supply line, a second voltage supply line, a first light-receiving element, and a diagnosis unit is disclosed. The pixel circuits each include a first terminal, a second terminal, a third terminal, an accumulation unit, a first transistor, a second transistor, and an output unit. The first transistor is couples the third terminal to the accumulation unit on the basis of a voltage of the first terminal. The second transistor supplies a predetermined voltage to the accumulation unit on the basis of a voltage of the second terminal. The output unit outputs a signal corresponding to a voltage in the accumulation unit.

Fabrication processing is executed in a chip of an image sensor. An image capturing device includes an image capturing unit (11) mounted on a vehicle and configured to generate image data by performing image capturing of a peripheral region of the vehicle, a scene recognition unit (214) configured to recognize a scene of the peripheral region based on the image data, and a drive control unit (12) configured to control drive of the image capturing unit based on the scene recognized by the scene recognition unit.

Some embodiments relate to an imaging system including an active pixel and an analog-to-digital conversion (ADC) circuit including comparator. The comparator may be operatively coupled to the active pixel and configured to receive an output of the active pixel. The back-end ADC and memory circuit may be operatively coupled to the active pixel. The back-end ADC and memory circuit may include a write control circuit, an ADC memory operatively coupled to a read/write data bus and to the write control circuit, and a state latch operatively coupled to the write control circuit.

There is provided an imaging element includes a photoelectric conversion unit that includes a first electrode, a photoelectric conversion layer, and a second electrode, in which the photoelectric conversion unit further includes a charge storage electrode that has an opposite region opposite to the first electrode via an insulating layer, and a transfer control electrode that is opposite to the first electrode and the charge storage electrode via the insulating layer, and the photoelectric conversion layer is disposed above at least the charge storage electrode via the insulating layer.

A solid-state imaging element and an electronic device are provided. A pixel at least includes a photoelectric conversion unit that performs photoelectric conversion, an FD unit to which charge generated in the photoelectric conversion unit is transferred, and an amplification transistor that has a gate electrode to which the FD unit is connected. A reference signal is input to a MOS transistor. The reference signal is referred to when AD conversion is performed on a pixel signal according to an amount of light received by the pixel. Then, a shared structure is employed in which a predetermined number of pixels share an AD converter that includes a differential pair including the MOS transistor and the amplification transistor. Each of the pixels is provided with a selection transistor that is used to select a pixel for which AD conversion is performed on the pixel signal.

An imaging element incorporates a reading portion that reads out captured image data at a first frame rate, a storage portion that stores the image data, a processing portion that processes the image data, and an output portion that outputs the processed image data at a second frame rate lower than the first frame rate. The reading portion reads out the image data of each of a plurality of frames in parallel. The storage portion stores, in parallel, each image data read out in parallel by the reading portion. The processing portion performs generation processing of generating output image data of one frame using the image data of each of the plurality of frames stored in the storage portion.

An image sensor comprises a plurality of pixels. Pixels are capable of detecting a change in an amount of light intensity and pixels are capable of detecting an amount of light intensity. In a first mode the sensor outputs data from the first one or more of the pixels. In a second mode the sensor outputs data from the second one or more of the pixels. The first mode may be a lower power operation mode and the second mode may be a higher power operation mode. At least one of the first mode and the second mode is selected by a processor based on at least one of a result of processing data output in the first mode and a result of processing data output in the second mode.

An image sensor comprises a plurality of pixels. Pixels are capable of detecting a change in an amount of light intensity and pixels are capable of detecting an amount of light intensity. In a first mode the sensor outputs data from the first one or more of the pixels. In a second mode the sensor outputs data from the second one or more of the pixels. At least one of the first mode and the second mode is selected by a processor based on at least one of a result of processing data output in the first mode and a result of processing data output in the second mode.