An atmosphere of ammonia that absorbs infrared light in a wavelength band overlapping with the measurement wavelength band of a radiation thermometer is formed in a chamber in which a semiconductor wafer is thermally treated. A filter that selectively transmits infrared light having a wavelength not overlapping with the absorption wavelength band of ammonia is installed between an optical lens system and a detector of the radiation thermometer to avoid influence of the infrared light absorption by ammonia. A conversion table corresponding to the installed filter is selected from a plurality of conversion tables representing a correlation between energy of infrared light incident on the radiation thermometer and temperature of a black body, and is used at the radiation thermometer. Accordingly, the temperature of the semiconductor wafer can be accurately measured in the atmosphere of ammonia.

An infrared processing device includes an infrared heater including a heating body and a metamaterial structure capable of, when thermal energy is input from the heating body, radiating infrared rays which have a maximum peak of a non-Planck distribution and whose maximum peak has a peak wavelength of 2 m or more and 7 m or less; an inner tube that surrounds the infrared heater, contains at least one of a fluorine-based material having a CF bond and calcium fluoride, and transmits infrared rays of the peak wavelength; and an outer tube that surrounds the inner tube and forms, between the inner tube and the outer tube, an object channel through which a processing object is allowed to flow.

A smoke alarm has a housing with a heating device for heating walls of the housing to a temperature above the dew point. The heating device has at least one heating light emitting diode (LED). The heating LED has an opening angle for the emission of light, which opening angle leads to an irradiated area of the housing.

An infrared heating mechanism and device are provided. The infrared heating mechanism includes infrared heating tubes, wherein a plurality of reflection plates are disposed at intervals in a length direction of the infrared heating tubes, and mounting holes corresponding to the infrared heating tubes are provided on the reflection plates so that the reflection plates are sleeved on side walls of the infrared heating tubes.

Systems and methods are provided for controlling infrared radiation (IR) sources of a sauna including tuning IR wavelength-ranges and radiated power-levels of IR sources, and directing IR to locations on a user's body. In one illustrative embodiment, a sauna may be provided having adjustable IR emitters to emit IR at any wavelength resulting in a desirable radiation treatment for the sauna user. In another illustrative embodiment, a method is provided for tuning IR emitters in a sauna.

In some examples, a heating apparatus includes a light emitting diode (LED) array comprising an LED to heat a target object, and a heat sink thermally coupled to the LED array, to dissipate heat from the LED array, the heat sink comprising a plurality of refrigerant paths to pass a refrigerant through the heat sink in a plurality of different directions.

Systems and methods are provided for controlling infrared radiation (IR) sources of a sauna including tuning IR wavelength-ranges and radiated power-levels of IR sources, and directing IR to locations on a user's body. In one illustrative embodiment, a sauna may be provided having adjustable heat sources to emit IR at any wavelength resulting in a desirable radiation treatment for the sauna user. In another illustrative embodiment, a method is provided for tuning IR sources in a sauna.

Certain example embodiments relate to systems and/or methods for preferentially and selectively heat treating conductive coatings such as ITO using specifically tuned near infrared-short wave infrared (NIR-SWIR) radiation. In certain example embodiments, the coating is preferentially heated, thereby improving its properties while at the underlying substrate is kept at low temperatures. Such techniques are advantageous for applications on glass and/or other substrates, e.g., where elevated substrate temperatures can lead to stress changes that adversely effect downstream processing (such as, for example, cutting, grinding, etc.) and may sometimes even result in substrate breakage or deformation. Selective heating of the coating may in certain example embodiments be obtained by using IR emitters with peak outputs over spectral wavelengths where the conductive coating (or the conductive layer(s) in the conductive coating) is significantly absorbing but where the substrate has reduced or minimal absorption.

An apparatus for heating powder particles, contains a radiation source (1), a housing (2) and a screen (4). The radiation source (1) has its maximum radiative power in the wavelength range of 0.78-2.5 m. The screen (4) has an absorbance of at least 0.8 in the wavelength range of 0.78-2.5 m.

In some examples, a heating apparatus includes a light emitting diode (LED) array comprising an LED to heat a target object, and a heat sink thermally coupled to the LED array, to dissipate heat from the LED array, the heat sink comprising a plurality of refrigerant paths to pass a refrigerant through the heat sink in a plurality of different directions.