A method of manufacturing a display device includes: the measurement step of sweeping a voltage to light-emitting elements and measuring a current value that flows in the light-emitting elements in response to a voltage value applied; the computation step of computing a first derivative value of the current value with respect to the voltage value, the first derivative value representing voltage dependence of a first derivative of the current value; the peak determination step of determining a peak of the first derivative value; the processing step of processing the light-emitting elements based on a result of the peak determination step; and the attaching step of attaching a housing to the substrate.

Disclosed is an organometallic compound represented by a following Chemical Formula 1. The organometallic compound acts as a dopant of a light-emitting layer of an organic light-emitting diode. Thus, operation voltage of the diode is lowered, and luminous efficiency and lifespan thereof are improved:

Ir(L.sub.A).sub.m(L.sub.B).sub.n  [Chemical Formula 1] where in the Chemical Formula 1, L.sub.A represents a main ligand having an imidazole or benzimidazole group, and includes one selected from a group consisting of following Chemical Formula 2-1, Chemical Formula 2-2, Chemical Formula 2-3, Chemical Formula 2-4, Chemical Formula 2-5, Chemical Formula 2-6, Chemical Formula 2-7 and Chemical Formula 2-8, L.sub.B denotes an ancillary ligand represented by a following Chemical Formula 3, each of m and n denotes a number of the ligands bound to Ir (iridium), and m is 1, 2 or 3, and n is 0, 1 or 2, and a sum of m and n is 3

Bulk assemblies are provided, which may have desirable photoluminescence quantum efficiencies. The bulk assemblies may include two or more metal halides, and a wide band gap organic network. The wide band gap organic network may include organic cations. The metal halides may be disposed in the wide band gap organic network. Light emitting composite materials also are provided.

A semiconductor device that can be highly integrated is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, a third insulating layer, and a first conductive layer. The third insulating layer is positioned over the semiconductor layer and includes a first opening over the semiconductor layer. The first conductive layer is positioned over the semiconductor layer, the first insulating layer is positioned between the first conductive layer and the semiconductor layer, and the second insulating layer is provided in a position that is in contact with a side surface of the first opening, the semiconductor layer, and the first insulating layer. The semiconductor layer includes a first portion overlapping with the first insulating layer, a pair of second portions between which the first portion is sandwiched and which overlap with the second insulating layer, and a pair of third portions between which the first portion and the pair of second portions are sandwiched and which overlap with neither the first insulating layer nor the second insulating layer. The first portion has a smaller width than the first opening and has a thinner shape of the semiconductor layer than the second portions, and the second portions have a thinner shape of the semiconductor layer than the third portions.

A first side surface (312) is positioned at a light emitting region (142) side. The first side surface (312) is inclined toward the light emitting region (142) with distance from the first surface (102) of the substrate (100). A second side surface (314) is positioned opposite to the first side surface (312). The second side surface (314) is inclined away from the light emitting region (142) with distance from the first surface (102) of the substrate (100). A first upper surface (316) is positioned between the first side surface (312) and the second side surface (314), and is substantially parallel to the first surface (102) of the substrate (100).

A first side surface (312) is positioned at a light emitting region (142) side. The first side surface (312) is inclined toward the light emitting region (142) with distance from the first surface (102) of the substrate (100). A second side surface (314) is positioned opposite to the first side surface (312). The second side surface (314) is inclined away from the light emitting region (142) with distance from the first surface (102) of the substrate (100). A first upper surface (316) is positioned between the first side surface (312) and the second side surface (314), and is substantially parallel to the first surface (102) of the substrate (100).

A novel electronic device is provided. An electronic device capable of executing various types of processing by simple operation is provided. An electronic device with a high security level is provided. The electronic device includes a control portion, a detection portion, and a memory portion. The detection portion has a function of detecting touch operation and a function of obtaining fingerprint data on a touching finger. The memory portion has a function of retaining fingerprint data on a plurality of finger registered in advance. The control portion has functions of comparing the fingerprint data on the touching finger obtained by the detection portion with the fingerprint data on the plurality of fingers when the detection portion detects touch operation, and executing processing corresponding to the fingerprint data on the touching finger or a combination of the touch operation and the fingerprint data on the touching finger when the fingerprint data on the touching finger matches any one piece of the fingerprint data on the plurality of fingers.

A novel functional panel that is highly convenient or reliable is provided. A novel display device is provided. The functional panel includes an optical element, a first insulating film, and a region. The optical element has a first refractive index; the optical element is a concave lens; the optical element has a first surface and a second surface; the optical element has a first cross section on a first plane; the first surface forms a first curve in the first cross section; the first curve has a first radius of curvature; the second surface faces the first surface; the second surface is irradiated with first light; the first insulating film is interposed between the optical element and the region; the first insulating film is in contact with the second surface; the region overlaps with the second surface; the region faces the second surface; the region emits the first light; and a distance L1 is a distance between the region and the second surface. The distance L1 has a relationship with the first radius of curvature R1 and the first refractive index N1 represented by the following formula: L1≤5×R1/(N1−1).

A novel functional panel that is highly convenient or reliable is provided. A novel display device is provided. The functional panel includes an optical element, a first insulating film, and a region. The optical element has a first refractive index; the optical element is a concave lens; the optical element has a first surface and a second surface; the optical element has a first cross section on a first plane; the first surface forms a first curve in the first cross section; the first curve has a first radius of curvature; the second surface faces the first surface; the second surface is irradiated with first light; the first insulating film is interposed between the optical element and the region; the first insulating film is in contact with the second surface; the region overlaps with the second surface; the region faces the second surface; the region emits the first light; and a distance L1 is a distance between the region and the second surface. The distance L1 has a relationship with the first radius of curvature R1 and the first refractive index N1 represented by the following formula: L1≤5×R1/(N1−1).

A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.