The present application relates to a device for generating X-ray radiation and particle radiation by means of nuclear fusion, comprising: an anode and a cathode, which are separated from each other by an insulator and are arranged coaxially to each other, wherein the anode and the cathode are arranged at least partially in a reactor chamber and the cathode has a plurality of cathode electrodes a pre-discharge device for generating a pre-discharge that forms a low-impedance bridging across the insulator a gas that is contained in the reactor chamber; an electrical pre-discharge source, especially with high internal resistance that is connected with the pre-discharge device; and an electrical discharge source that is electrically connected to the confined anode and the cathode, wherein a dense, magnetically confined plasmoid is generated in front of the anode as a result of an electrical discharge from the electrical discharge source and one or more ion beams, one or more X-rays or combinations thereof are emitted.

A soft X-ray light source, including a vacuum target chamber, a refrigeration cavity, and a nozzle. The refrigeration cavity and the nozzle are contained in the vacuum target chamber. The nozzle (36) is arranged in the refrigeration cavity. The vacuum target chamber has a t-branch tube and a multi-channel tube. The t-branch tube has a first outlet and a second outlet opposed to each other and a third outlet, wherein the first outlet is connected to a mounting plate through which a refrigerant inlet pipe, a refrigerant outlet pipe, and a working gas pipe respectively pass and are connected to the refrigeration cavity, and wherein the third outlet is connected to a vacuum extraction device. The multi-channel tube has a top opening and a bottom opening opposed to each other, wherein the top opening is connected to the second outlet, wherein a vacuum outlet is provided at the bottom opening.

An extreme ultraviolet (EUV) photolithography system cleans debris from an EUV reticle. The system includes a cleaning electrode configured to be positioned adjacent the EUV reticle. The system includes a voltage source that helps draw debris from the EUV reticle toward the cleaning electrode by applying a voltage of alternating polarity to the cleaning electrode.

X-ray sources including an electron source, an adjustment means for adjusting an orientation of the electron beam generated by the electron source, a focusing means configured to focus the electron beam in accordance with a focusing setting, a beam orientation sensor arranged to generate a signal indicating an orientation of the electron beam relative to a target position, and a controller that is operably connected to the focusing means, the beam orientation sensor and the adjustment means. Also, X-ray sources including a target orientation sensor and a target adjustment means, wherein the controller is configured to cause the beam adjustment means and/or target adjustment means to adjust the relative orientation between the electron beam and the target.

An extreme ultraviolet radiation (EUV) source, including: a vessel having an inner vessel wall and an intermediate focus (IF) region; an EUV collector disposed inside the vessel, the EUV collector including a reflective surface configured to reflect EUV radiation toward the intermediate focus region, the reflective surface configured to directionally face the IF region of the vessel; a showerhead disposed along at least a portion of the inner vessel wall, the showerhead including a plurality of nozzles configured to introduce gas into the vessel; and one or more exhausts configured to remove gas introduced into the vessel, the one or more exhausts being oriented along at least a portion of the inner vessel wall so that the gas is caused to flow away from the EUV collector.

A method for protecting an X-ray source including: a liquid jet generator configured to form a liquid jet moving along a flow axis; an electron source configured to provide an electron beam interacting with the liquid jet to generate X-ray radiation; the method including: generating the liquid jet: monitoring a quality measure indicating a performance of the liquid jet; identifying, based on the quality measure, a malperformance of the liquid jet; and if said malperformance is identified, causing the X-ray source to enter a safe mode for protecting the X ray source. Further, to corresponding devices.

A system for an extreme ultraviolet light source includes a capillary tube, the capillary tube including a sidewall extending from a first end to a second end, the sidewall including an exterior wall and an interior wall, the interior wall defining a passage that extends from the first end to the second end; an actuator configured to be positioned at the exterior wall of the capillary tube; and an adhesive between the exterior wall and the actuator, the adhesive being configured to mechanically couple the actuator and the capillary tube, wherein the adhesive occupies a volume that remains substantially the same or expands as a result of curing.

A X-ray source, comprising a laser, of a pulse duration of at most 40 fs, instantaneous power of at least about 80 TW, a pulse repetition rate of at least 1 Hz; an optical compressor spectrally shaping the laser beam; focusing optics in the range between f#10 and f#15; and a gas target of electron density after ionization by the laser beam in a range between 10.sup.18 cm.sup.3 and 10.sup.19 cm.sup.−3; wherein the focusing optics focuses the laser beam in the gas target, and interaction of the focused laser beam with the gas target generates an X-ray beam, with a focused laser amplitude a.sub.0, given by a.sub.0=0.855 [I.sub.L (10.sup.18W/cm.sup.2)λ.sub.L,.sup.2 (μm)].sup.1/2, where I.sub.L is the on-target laser intensity and λ.sub.L is the laser wavelength, of at least 2 and a P/P.sub.c ratio value of at least 20, with P being the beam power and Pc a critical power given by Pc=17 (n.sub.c/n) GW where n is the electron density and n.sub.c is a critical electron density at which the plasma acts as a mirror reflecting the laser beam.

A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.

An extreme ultraviolet (EUV) photolithography system cleans debris from an EUV reticle. The system includes a cleaning electrode configured to be positioned adjacent the EUV reticle. The system includes a voltage source that helps draw debris from the EUV reticle toward the cleaning electrode by applying a voltage of alternating polarity to the cleaning electrode.