In accordance with some embodiments, a method of controlling an extreme ultraviolet (EUV) radiation in lithography system is provided. The method includes generating a plurality of target droplets. The method also includes generating a pre-pulse and a main pulse from an excitation laser module to generate EUV light and reflecting the EUV light by a collector mirror. The method further includes measuring a separation between a pre-pulse and a main pulse. Moreover, the method includes determining whether the separation between the pre-pulse and the main pulse in the y-axis is changed, if not adjusting a configurable parameter of the excitation laser module to set the variation in the energy of the EUV light within an acceptable range.

A laser wakefield acceleration (LWFA) induced electron beam system for cancer therapy and diagnostics. Example embodiments presented herein include one or more laser fibers, and an electron beam source within an individual one of the one or more laser fibers, wherein the electron beam source includes a laser pulse source, a plasma target, a set of optics interposing the laser pulse source and the plasma target adapted to focus a laser pulse generated by the laser pulse source onto the plasma target, wherein interaction of the laser pulse with the plasma target induces the generation of an electron beam. In various embodiments presented herein, high energy electrons of the electron beam interact with a high-Z material to generate X-rays.

Extreme ultraviolet light source systems may include a chamber including a condensing mirror and having an intermediate focus, by which extreme ultraviolet light reflected from the condensing mirror is emitted along a first optical path, a blocking plate that may be on the chamber so as to intersect the first optical path and may include an opening through which the extreme ultraviolet light is emitted, a transparent cover on the blocking plate so as to cover the opening, a nozzle that may be between the chamber and the blocking plate so that an end portion faces the intermediate focus and may spray a first gas in a direction intersecting the first optical path, and an exhaust pipe between the chamber and the blocking plate so as to face the end portion of the nozzle.

Extreme ultraviolet light source systems may include a chamber including a condensing mirror and having an intermediate focus, by which extreme ultraviolet light reflected from the condensing mirror is emitted along a first optical path, a blocking plate that may be on the chamber so as to intersect the first optical path and may include an opening through which the extreme ultraviolet light is emitted, a transparent cover on the blocking plate so as to cover the opening, a nozzle that may be between the chamber and the blocking plate so that an end portion faces the intermediate focus and may spray a first gas in a direction intersecting the first optical path, and an exhaust pipe between the chamber and the blocking plate so as to face the end portion of the nozzle.

A method of manufacturing a semiconductor includes generating plasma in an amplifying tube using gas as a gain medium; detecting a state of the plasma generated in the amplifying tube; determining a virtual laser gain based on the detected state of the plasma; controlling the state of the plasma such that the virtual laser gain is within a target range; and manufacturing the semiconductor device including performing an exposure process on a substrate using a laser beam output from the amplifying tube adjusted to have the virtual laser gain within the target range.

A device is disclosed that includes a master controller, a process chamber, a local controller, a switch, and a data storage. The process chamber is configured to generate a data according to a EUV light generation process. The local controller is coupled to the master controller and configured to control the process chamber. The switch is coupled between the master controller and the local controller, wherein the switch is configured to provide paths for the local controller to communicate with the master controller. The data storage directly connected to the local controller and configured to store the data. The local controller communicates directly with the data storage.

An extreme ultraviolet light source apparatus includes a disc-shaped cathode rotating about an axis, a disc-shaped anode rotating about an axis, an energy beam irradiation device irradiating a plasma raw material on the cathode with an energy beam to vaporize the plasma raw material, a power supply for causing a discharge between the cathode and the anode for generating a plasma in the gap between the cathode and the anode to emit extreme ultraviolet light, and an irradiation position adjusting mechanism for adjusting a position at which the cathode is irradiated with the energy beam. The cathode, the anode, and the irradiation position adjusting mechanism are accommodated in a housing. A photography device is disposed outside the housing and is configured to photograph a visible-light image of a vicinity of the cathode and the anode, the vicinity including visible light emitted from the plasma.

An electromagnetic radiation generation apparatus includes a collector, a gas supplier and a gas pipeline. The collector has a reflection surface configured to reflect an electromagnetic radiation. The collector includes a bottom portion, a perimeter portion, and a middle portion between the bottom portion and the perimeter portion. The middle portion of the collector includes a plurality of openings. The gas supplier is configured to provide a buffer gas. The gas pipeline is in communication with the gas supplier and the collector, and configured to purge the buffer gas through the openings of the middle portion to form a gas protection layer near the reflection surface of the collector. The openings of the middle portion include a plurality of holes arranged in an array including a plurality of rows of holes, or a plurality of concentric gaps.

An extreme ultraviolet chamber apparatus includes: a chamber; an EUV condensing mirror arranged in the chamber; a first nozzle arranged in an outer peripheral portion of the EUV condensing mirror and configured to feed a gas in a first direction along a reflective surface of the EUV condensing mirror; a second nozzle arranged in the outer peripheral portion of the EUV condensing mirror and configured to feed a gas in a second direction away from the EUV condensing mirror; and an exhaust port arranged in the chamber.

A system for an extreme ultraviolet light source includes a capillary tube, the capillary tube including a sidewall extending from a first end to a second end, the sidewall including an exterior wall and an interior wall, the interior wall defining a passage that extends from the first end to the second end; an actuator configured to be positioned at the exterior wall of the capillary tube; and an adhesive between the exterior wall and the actuator, the adhesive being configured to mechanically couple the actuator and the capillary tube, wherein the adhesive occupies a volume that remains substantially the same or expands as a result of curing.