A plasma treatment system includes a plasma arc torch, a tee attached to a hollow electrode nozzle of the plasma arc torch, and a screw feed unit or a ram feed unit having an inlet and an outlet attached to the tee. The plasma arc torch includes a cylindrical vessel having a first end and a second end, a first tangential inlet/outlet connected to or proximate to the first end, a second tangential inlet/outlet connected to or proximate to the second end, an electrode housing connected to the first end of the cylindrical vessel such that a first electrode is (a) aligned with a longitudinal axis of the cylindrical vessel, and (b) extends into the cylindrical vessel, and a hollow electrode nozzle connected to the second end of the cylindrical vessel such that a centerline of the hollow electrode nozzle is aligned with the longitudinal axis of the cylindrical vessel.

A plasma treatment system includes a plasma arc torch, a tee attached to a hollow electrode nozzle of the plasma arc torch, and a screw feed unit or a ram feed unit having an inlet and an outlet attached to the tee. The plasma arc torch includes a cylindrical vessel having a first end and a second end, a first tangential inlet/outlet connected to or proximate to the first end, a second tangential inlet/outlet connected to or proximate to the second end, an electrode housing connected to the first end of the cylindrical vessel such that a first electrode is (a) aligned with a longitudinal axis of the cylindrical vessel, and (b) extends into the cylindrical vessel, and a hollow electrode nozzle connected to the second end of the cylindrical vessel such that a centerline of the hollow electrode nozzle is aligned with the longitudinal axis of the cylindrical vessel.

A resin insulation guide is used in a plasma torch including an electrode and a nozzle into which the electrode is inserted. The insulation guide is used to couple the electrode and the nozzle, and includes a first internal circumferential surface formed on an inside of the insulation guide, a second internal circumferential surface formed on the inside of the insulation guide, a communication channel, and a heat resistant coating formed on the first internal circumferential surface. The second internal circumferential surface has an inner diameter smaller than an inner diameter of the first internal circumferential surface. The communication channel communicates a space inside the first internal circumferential surface to an outside of the insulation guide, and extends in a direction inclined with respect to an axial direction of the insulation guide.

A plasma generator includes a cylindrical containment housing, an anode in a confinement space within the containment housing and a cathode within the anode. The cylindrical containment housing includes an open end and a closed end. A base forms the closed end. That base includes a first gas inlet and a first gas outlet.

Systems and methods for an adjustable sample floor for ultrafast signal washout are disclosed. In an embodiment. A target support configured to adjustably support a target within a sample chamber may include: a support frame that may configured to be inserted into the sample chamber, a support platform that may be disposed within the support frame, and a platform adjustment system that may be coupled to the support frame and the support platform. The platform adjustment system may be configured to adjust at least one of: a position and an orientation of the support platform relative to the support frame when the support frame is inserted into the sample chamber.

Systems and methods for an adjustable sample floor for ultrafast signal washout are disclosed. In an embodiment. A target support configured to adjustably support a target within a sample chamber may include: a support frame that may configured to be inserted into the sample chamber, a support platform that may be disposed within the support frame, and a platform adjustment system that may be coupled to the support frame and the support platform. The platform adjustment system may be configured to adjust at least one of: a position and an orientation of the support platform relative to the support frame when the support frame is inserted into the sample chamber.

A plasma source is provided. The plasma source includes at least three hollow cathodes, including a first hollow cathode, a second hollow cathode, and a third hollow cathode, each hollow cathode having a plasma exit region. The plasma source includes a source of power capable of producing multiple output waves, including a first output wave, a second output wave, and a third output wave, wherein the first output wave and the second output wave are out of phase, the second output wave and the third output wave are out of phase, and the first output wave and the third output wave are out of phase. Each hollow cathode is electrically connected to the source of power such that the first hollow cathode is electrically connected to the first output wave, the second hollow cathode is electrically connected to the second output wave, and the third hollow cathode is electrically connected to the third output wave. Electrical current flows between the at least three hollow cathodes that are out of electrical phase. The plasma source is capable of generating a plasma between the hollow cathodes.

Infectious diseases can be transmitted to humans, or between humans and animals, by airborne viruses and bacteria, known as infectious aerosols. Current protective measures that individuals can take to avoid inhaling such aerosols are either marginally effective (personal face masks) or impractical (self-contained breathing apparatuses). Building ventilation systems employing high-efficiency filters to prevent distribution of such aerosols suffer from high energy costs and high filter replacement costs. The development of conventional, intramuscularly administered vaccines takes months or years to produce enough doses to protect a population from a rapidly spreading infectious disease. Airborne viruses and bacteria have been shown to be completely inactivated when exposed to non-thermal plasmas. Results indicate the potential for sub-lethal exposures of airborne pathogens could render them unable to spark an infection in a host, but still retain the necessary surface proteins to cause an immune response in the host.

A gas treatment method, including: treating an exhaust gas discharged from a semiconductor process chamber using a gas treatment system; and discharging the treated exhaust gas, wherein the treating of the exhaust gas includes: operating a first thermal oxidizer to treat the exhaust gas discharged from the semiconductor process chamber, the first thermal oxidizer being connected to the semiconductor process chamber and allowing the treated exhaust gas to pass through a plasma processing apparatus connected to the first thermal oxidizer; stopping the operation of the first thermal oxidizer to perform maintenance on the first thermal oxidizer; and wherein the stopping the operation of the first thermal oxidizer comprises: performing maintenance on the first thermal oxidizer; and operating the plasma processing apparatus to treat the exhaust gas discharged from the semiconductor process chamber

A gas treatment method, including: treating an exhaust gas discharged from a semiconductor process chamber using a gas treatment system; and discharging the treated exhaust gas, wherein the treating of the exhaust gas includes: operating a first thermal oxidizer to treat the exhaust gas discharged from the semiconductor process chamber, the first thermal oxidizer being connected to the semiconductor process chamber and allowing the treated exhaust gas to pass through a plasma processing apparatus connected to the first thermal oxidizer; stopping the operation of the first thermal oxidizer to perform maintenance on the first thermal oxidizer; and wherein the stopping the operation of the first thermal oxidizer comprises: performing maintenance on the first thermal oxidizer; and operating the plasma processing apparatus to treat the exhaust gas discharged from the semiconductor process chamber