H05H1/46

Synthesis of nanoparticle in liquid, semi-solid media and in cells and tissues using cold plasma technology
11607467 · 2023-03-21 · ·

A method of forming metal nanoparticles includes applying a substance to an area of interest, applying cold plasma to the area of interest, and synthesizing nanoparticles from the substance using the cold plasma in the area of interest, wherein the substance is a solution that contains metal ions, and the nanoparticles synthesized are metallic in nature.

PLASMA PROCESSING APPARATUS
20220344132 · 2022-10-27 ·

In order to enable plasma density distribution control having a high degree of freedom to solve problems of not only in-plane uniformity of an etching processing but also a reduction of a charge-up damage, a plasma processing apparatus includes: a vacuum chamber provided with a plasma processing chamber that plasma-processes a substrate inside and is able to exhaust the inside of this plasma processing chamber to a vacuum; and a microwave power supply unit that is provided with a microwave source and a circular waveguide and supplies, via the circular waveguide, a microwave power oscillated from the microwave source to the vacuum chamber, in which the microwave power supply unit is configured by arranging a plurality of waveguides, which are coaxially and concentrically arranged with the circular waveguide and have different dielectric constants inside, between the circular waveguide and the vacuum chamber.

LASER-SUSTAINED PLASMA LIGHT SOURCE WITH REVERSE VORTEX FLOW

A laser-sustained plasma (LSP) light source with reverse vortex flow is disclosed. The LSP source includes gas cell including a gas containment structure including a body, neck, and shaft. The gas cell includes one or more gas delivery lines for delivery gas to one or more nozzles positioned in or below the neck of the gas containment structure. The gas cell includes one or more gas inlets and one or more gas outlets arranged to generate a reverse vortex flow within the gas containment structure of the gas cell. The LSP source also includes a laser pump source configured to generate an optical pump to sustain a plasma in a region of the gas containment structure. The LSP source includes a light collector element configured to collect at least a portion of broadband light emitted from the plasma.

LASER-SUSTAINED PLASMA LIGHT SOURCE WITH REVERSE VORTEX FLOW

A laser-sustained plasma (LSP) light source with reverse vortex flow is disclosed. The LSP source includes gas cell including a gas containment structure including a body, neck, and shaft. The gas cell includes one or more gas delivery lines for delivery gas to one or more nozzles positioned in or below the neck of the gas containment structure. The gas cell includes one or more gas inlets and one or more gas outlets arranged to generate a reverse vortex flow within the gas containment structure of the gas cell. The LSP source also includes a laser pump source configured to generate an optical pump to sustain a plasma in a region of the gas containment structure. The LSP source includes a light collector element configured to collect at least a portion of broadband light emitted from the plasma.

INDUCTIVE COIL STRUCTURE AND INDUCTIVELY COUPLED PLASMA GENERATION SYSTEM
20230080526 · 2023-03-16 ·

An inductively-coupled plasma (ICP) generation system may include a dielectric tube, a first inductive coil structure to enclose the dielectric tube, an RF power supply, a first main capacitor between a positive output terminal of the RF power supply and one end of the first inductive coil structure, and a second main capacitor between a negative output terminal of the RF power supply and an opposite end of the first inductive coil structure. The first inductive coil structure may include inductive coils connected in series to each other and placed at different layers, the inductive coils having at least one turn at each layer, and auxiliary capacitors, which are respectively provided between adjacent ones of the inductive coils to distribute a voltage applied to the inductive coils.

INDUCTIVE COIL STRUCTURE AND INDUCTIVELY COUPLED PLASMA GENERATION SYSTEM
20230080526 · 2023-03-16 ·

An inductively-coupled plasma (ICP) generation system may include a dielectric tube, a first inductive coil structure to enclose the dielectric tube, an RF power supply, a first main capacitor between a positive output terminal of the RF power supply and one end of the first inductive coil structure, and a second main capacitor between a negative output terminal of the RF power supply and an opposite end of the first inductive coil structure. The first inductive coil structure may include inductive coils connected in series to each other and placed at different layers, the inductive coils having at least one turn at each layer, and auxiliary capacitors, which are respectively provided between adjacent ones of the inductive coils to distribute a voltage applied to the inductive coils.

Pulsed Capacitively Coupled Plasma Processes

A method of plasma processing includes cyclically performing a cycle including the steps of performing a glow phase and performing an afterglow phase. The glow phase includes providing a first SP pulse comprising a first SP power level for a first duration to an SP electrode to generate a capacitively coupled plasma in a plasma processing chamber. The first SP pulse terminates at the end of the glow phase. The afterglow phase is performed after the glow phase and includes providing a BP pulse train to a BP electrode coupled to a target substrate within the plasma processing chamber in an afterglow of the capacitively coupled plasma for a second duration between about 10 μs and about 100 μs. The BP pulse train includes a plurality of BP spikes. Each of the plurality of BP spikes is a DC pulse that has a first BP power level.

Pulsed Capacitively Coupled Plasma Processes

A method of plasma processing includes cyclically performing a cycle including the steps of performing a glow phase and performing an afterglow phase. The glow phase includes providing a first SP pulse comprising a first SP power level for a first duration to an SP electrode to generate a capacitively coupled plasma in a plasma processing chamber. The first SP pulse terminates at the end of the glow phase. The afterglow phase is performed after the glow phase and includes providing a BP pulse train to a BP electrode coupled to a target substrate within the plasma processing chamber in an afterglow of the capacitively coupled plasma for a second duration between about 10 μs and about 100 μs. The BP pulse train includes a plurality of BP spikes. Each of the plurality of BP spikes is a DC pulse that has a first BP power level.

Focused Microwave or Radio Frequency Ignition and Plasma Generation
20230083067 · 2023-03-16 ·

A method of providing spark ignition for an engine or other equipment having a combustion chamber. A radio frequency wave or a microwave (RF/microwave) generator delivers radio frequency waves or microwaves to a transmit antenna inside the combustion chamber. At least one RF/microwave receive antenna is attached to an internal surface of the combustion chamber and comprises two or more RF/microwave focusing features with a spark gap between them. The transmit antenna wirelessly energizes the receive antenna, which generates a spark between the two focusing features.

Methods and apparatus for processing a substrate

Methods and apparatus for processing a substrate are provided herein. For example, an apparatus can be a controller for a high peak power radio frequency (RF) generator. The controller comprises a control logic circuit in operable communication with an RF generator operating in a burst mode, the control logic circuit configured to receive a power, P, request at a predetermined duty cycle, δ, from a plasma processing chamber, determine a peak maximum power, P.sub.peak.sup.max, based on a maximum average power, P.sub.avg.sup.max, and a maximum absolute power, P.sub.abs.sup.max, of the RF generator and the predetermined duty cycle, and transmit a control signal to the RF generator to limit a peak power, P.sub.peak, to the plasma processing chamber based on the P.sub.peak.sup.max.