A high voltage pulse generator is disclosed. The high voltage pulse generator comprises a pulse generating transformer having a primary coil with a first side and a second side, and a secondary coil with a first side and a second side. A direct current (DC) voltage source connection is at the first side of the primary coil. A first high frequency power driver transistor is coupled between the second side of the primary coil and a ground connection. The first high frequency power driver transistor is configured to operate in an on-mode for a selected time period to charge the primary coil for the selected time period based on a switching frequency of the first high frequency power driver transistor, and switch the first high frequency power driver transistor to an off-mode at the switching frequency to release the charge from the primary coil to the secondary coil. A diode is coupled between the first side of the secondary coil and a pulsed voltage output that is configured to be connected to a high voltage device. The diode configured to direct a flow of charge from the secondary coil to charge a capacitance of the high voltage device to a rising pulse leading edge of a voltage pulse.

In an embodiment a device includes a thermoelectric component, an electrode arranged opposite the thermoelectric component and a high voltage source configured to generate a high voltage between the thermoelectric component and the electrode sufficient to ignite a dielectric barrier discharge.

The present disclosure describes systems and methods for controlling the electrical generation of nitric oxide. In some aspects, a system for generating nitric oxide comprises a plasma chamber housing two or more electrodes in communication with a resonant high voltage circuit configured to send a signal to the plasma chamber for generating nitric oxide in a product gas from a flow of a reactant gas, and a controller configured to generate a pulse width modulation signal having multiple harmonic frequencies to excite the resonant high voltage circuit. The controller is configured to adjust the duty cycle of the pulse width modulation signal, the controller selecting the duty cycle based on a target voltage before plasma formation and a target current after plasma formation in the plasma chamber.

Disclosed is an HF plasma generator for generating an inductively coupled plasma in spectrometry, comprising a voltage supply device with a DC voltage source, an oscillator circuit connected to the power supply device for generating HF power, and a load circuit coupled to the oscillator circuit for generating the plasma, said load circuit having at least one induction coil and one capacitor connected in parallel. The HF plasma generator comprises at least one controllable voltage source arranged in a branch of the oscillator circuit. The controllable voltage source is designed to set a voltage applied to the load circuit and/or at least one potential difference between the induction coil and a spectrometer, in particular a cone of the spectrometer. Further disclosed is a spectrometer having an HF plasma generator.

The present disclosure is related to the field of chemistry and provides methods and devices for stimulation of endothermic reactions in gas phase with high activation barriers by nanosecond pulsed electrical discharge. It can be used for, e.g., CO.sub.2 functionalization of methane, H.sub.2S dissociation, hydrogen and syngas production, for processing ammonia synthesis and dissociation, etc. Some embodiments include methods and devices associated with the stimulation of plasma chemical reactions with nanosecond pulse electric discharge in the presence of gas flow.

Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A control loop can be activated throughout various processing steps to maintain the surface floating potential of the stage to the reference ground potential. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.

Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A conductive plate in a same region of the positive column opposite the stage is used to measure the surface floating potential of the stage. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.

Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A conductive plate in a same region of the positive column opposite the stage is used to measure the surface floating potential of the stage. A control loop can be activated throughout various processing steps to maintain the surface floating potential of the stage to the reference ground potential. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.

A plasma generator generates atmospheric pressure, low temperature plasma (cold plasma), and includes a first electrode, a second electrode arranged so as to define a predetermined gap between a planar bottom surface of the first electrode and a planar top surface of the second electrode; at least one supplemental electrode, a first dielectric layer, a second dielectric layer, at least one supplemental top dielectric layer having a relative permittivity between 2 and 500, and a thickness of 3 mm or less, at least one supplemental bottom dielectric layer having a relative permittivity between 2 and 500, and a thickness of 3 mm or less, and a power supply configured to supply electrical power to the first, second, and supplemental electrodes at a predetermined voltage and frequency, such that, based on the predetermined gaps between the first, second, and supplemental electrodes, atmospheric pressure, low temperature plasma is generated.

A plasma generator generates atmospheric pressure, low temperature plasma (cold plasma), and includes a first electrode; a second electrode opposing the first electrode so as to define a predetermined gap therebetween; at least one supplemental electrode opposing a planar top surface of the second electrode and a planar bottom surface of the first electrode; a first dielectric layer; at least one supplemental dielectric layer that is disposed on a additional planar bottom surface of the at least one supplemental electrode having a relative permittivity between 2 and 500, and a thickness of 3 mm or less; and a power supply configured to supply electrical power to the first and second electrodes at a predetermined voltage and frequency, such that, based on the predetermined gap between the first and second electrodes, atmospheric pressure, low-temperature plasma is generated.