A method for fabricating a conductive trace structure includes the steps: forming a first metal layer on a non-conductive substrate; removing a part of the first metal layer to expose the non-conductive substrate so as to form the first metal layer into a plating region and a non-plating region, the plating region being divided into at least two trace-forming portions and at least one bridge portion; forming a second metal layer on the plating region by electroplating the plating region using one of the trace-forming portions and the bridge portion as an electrode; and removing the bridge portion and the second metal layer formed on the bridge portion.

A composite circuit board includes a composite circuit board unit, a first solder mask formed on a first metal protection layer of the composite circuit board unit, and a second solder mask formed on a second metal protection layer of the composite circuit board unit. Two ends of a first outer conductive circuit are bent back toward each other and spaced apart a predetermined distance to form a first window. Two ends of a second outer conductive circuit are bent back toward each other and spaced apart a predetermined distance to form a second window.

The first present invention is a graphite sheet having a thickness of not more than 9.6 μm and more than 50 nm and a thermal conductivity along the a-b plane direction at 25° C. of 1950 W/mK or more. The second present invention is a graphite sheet having a thickness in a range of less than 9.6 μm and 20 nm or more, an area of 9 mm2 or more, and a carrier mobility along the a-b plane direction at 25° C. of 8000 cm2/V.Math.sec or more.

A method for producing a wired circuit board including an insulating layer and a conductive pattern, including (1), providing the insulating layer having an inclination face; (2), providing a metal thin film at least on the surface of the insulating layer; (3), providing a photoresist on the surface of the metal thin film; (4), disposing a photomask so that a first portion, where the conductive pattern is provided in the photoresist, is shielded from light, and the photoresist is exposed to light through the photomask; (5), removing the first portion to expose the metal thin film corresponding to the first portion; and (6), providing the conductive pattern on the surface of the metal thin film exposed from the photoresist. The inclination face has a second portion that allows the light reflected at the metal thin film to reach the first portion.

A manufacturing method of a metal structure is disclosed, which includes the following steps: forming a seed layer on a substrate; forming a patterned metal layer on the seed layer, wherein the patterned metal layer includes a metal member; forming a first patterned photoresist layer on the seed layer, wherein a thickness of the first patterned photoresist layer is less than a thickness of the patterned metal layer; and performing a first patterning process to the seed layer through the first patterned photoresist layer to form a patterned seed layer, wherein after the first patterning process, the metal member includes a first part and a second part, the first part is disposed between the patterned seed layer and the second part, and a width of the first part is greater than a width of the second part.

The present invention relates to a preparation method for a dry film solder resist (DFSR) capable of forming the DFSR having fine unevenness on a surface by a more simplified method, and a film laminate used therein. The preparation method for a dry film solder resist includes forming a predetermined photo-curable and heat-curable resin composition on a transparent carrier film having a surface on which a fine unevenness having an average roughness (Ra) of 200 nm to 2 μm is formed; laminating the resin composition on a substrate to form a laminated structure in which the substrate, the resin composition, and the transparent carrier film are sequentially formed; exposing the resin composition and delaminating the transparent carrier film; and alkaline-developing the resin composition in a non-exposure part and performing heat-curing.

A component carrier for carrying electronic components, wherein the component carrier comprises an at least partially electrically insulating core, at least one electronic component embedded in the core, and a coupling structure with at least one electrically conductive through-connection extending at least partially therethrough and having a component contacting end and a wiring contacting end, wherein the at least one electronic component is electrically contacted directly to the component contacting end, wherein at least an exterior surface portion of the coupling structure has homogeneous ablation properties and is patterned so as to have surface recesses filled with an electrically conductive wiring structure, and wherein the wiring contacting end is electrically contacted directly to the wiring structure.

A process for forming a graphene circuit pattern on an object is described. A graphene layer is grown on a metal foil. A bonding layer is formed on a protective film and a surface of the bonding layer is roughened. The graphene layer is transferred onto the roughened surface of the bonding layer. The protective film is removed and the bonding layer is laminated to a first core dielectric substrate. The metal foil is etched away. Thereafter the graphene layer is etched using oxygen plasma etching to form graphene circuits on the first core dielectric substrate. The first core dielectric substrate having graphene circuits thereon is bonded together with a second core dielectric substrate wherein the graphene circuits are on a side facing the second core dielectric substrate wherein an air gap is left therebetween.

According to one aspect of the present invention, a silver nanowire mesh (Ag NW-mesh) electrode and a fabricating method thereof. The Ag NW-mesh electrode includes a flexible substrate; and a mesh pattern layer which is disposed on the flexible substrate and in which a plurality of first meal lines and a plurality of second metal lines are composed of Ag NWs and intersect each other in an orthogonal or diagonal direction to form a grid pattern, wherein the first metal lines and the second metal lines of the mesh pattern layer form an angle of 35 degrees to 55 degrees with respect to a bending direction.

The invention relates to a transparent conductive layer comprising non-conductive areas and conductive areas, wherein the conductive areas comprise an FIG. 1 interconnected network of electrically conductive nanoobjects and in the non-conductive areas the nanoobjects are converted into particles and wherein the thickness of the conductive areas and the non-conductive areas differs less than 10 nm. The invention further relates to a process for producing a patterned transparent conductive film, the film comprising a substrate and a transparent conductive layer, and to a process for producing the patterned transparent conductive film.