An electromagnetic wave transmissive cover is configured to be employed in a vehicle to which a sensor device is attached. The electromagnetic wave transmissive cover includes a cover body that is attached to the vehicle and covers the sensor device from a front side in an emission direction of the electromagnetic waves, and a seal member that provides a seal between the sensor device and the cover body. The seal member includes an attachment base portion that is attached to the cover body while surrounding the electromagnetic wave transmissive portion, and an annular hollow seal portion that is coupled to the attachment base portion and is in contact with the sensor device while surrounding the electromagnetic wave transmissive portion.

A method of manufacturing a structurally competent, EMI-shielded IR window includes using a mathematical model that combines the Sotoodeh and Nag models to determine an optimal thickness and dopant concentration of a doped layer of GaAs or GaP. A slab of GaAs or GaP is prepared, and a doped layer of the same material having the optimal thickness and dopant concentration is applied thereto. In embodiments, the doped layer is applied by an HVPE method such as LP-HVPE, which can also provide enhanced GaAs transparency near 1 micron. The Drude model can be applied to assist in selecting an anti-reflective coating. If the model predicts that the requirements of an application cannot be met by a doped layer alone, a doped layer can be applied that exceeds the required IR transparency, and a metallic grid can be applied to improve the EMI shielding, thereby satisfying the requirements.

IR window slabs of GaP greater than 4 inches diameter, and of GaAs greater than 8 inches diameter, are grown on a substrate using Hydride Vapor Phase Epitaxy (HVPE), preferably low pressure HVPE (LP-HVPE). Growth rates can be hundreds of microns per hour, comparable to vertical melt growth. GaAs IR windows produced by the disclosed method exhibit lower absorption than crystals grown from vertical melt near 1 micron, due to reduced impurities and reduced growth temperatures that limit the solubility of excess arsenic, and thereby reduce the EL2 defects that cause high absorption near one micron in conventional GaAs boules. Silicon wafers can be used as HVPE substrates. For GaAs, layers of GaAsP that vary from 0% to 100% As can be applied to the substrate. EMI shielding can be applied by adding a dopant during the final stage of growth to provide a conductive GaAs or GaP layer.

The electromagnetic shielding of an enclosable building structure is provided by applying a shielded covering to overlay optical openings in the building structure. The shielded covering comprises a metal-coated woven substrate and a shielding coupling. The metal-coated woven substrate has a woven substrate and a metal coating. The woven substrate may be organic and comprise threads of intermingled fibers such as silk fibers. The metal-coated woven substrate may also have a protection feature such as transparent resin, of barriers of glass or transparent polymeric material. The shielded coupling connects the shielded covering to other shielding components of a shielded building structure to preserve shielding continuity over the interface between shielding components.

An electromagnetic interference shield is disclosed. The electromagnetic interference shield includes an optically transparent substrate and a metallic coating on the optically transparent substrate. The metal coating is characterized by a plurality of apertures aligned in a pattern that is defined by a deterministic relation. Distances between each of the plurality of apertures and an observation point in an associated image plane are uncorrelated.

The device consists of a container manufactured from a metamaterial with the property of transparency to visible light, for the holding of electrical or electronic devices, which electromagnetically protects the same and renders them electromagnetically undetectable. The purpose of the device is to guarantee user confidentiality in the use of the electromagnetic waves associated with telecommunications, by means of the use of a type of container that encloses any type of telecommunication device or appliance, with the potentiality that the insertion thereof into said container prevents the detection by means of electromagnetic waves of said appliance, and therefore makes impossible the tracing of said appliance by electromagnetic remote sensing means, including mobile telephony, radiofrequencies, or satellite telecommunication means such as GPS, Galileo, or other systems, without it being necessary to switch off said appliance beforehand.

A transparent conductive film (TCF) and methods for creating the TCF. The TCF includes a substrate having a surface, a metal mesh layer over at least a portion of the surface of the substrate, and a conductive layer over the metal mesh layer. The conductive layer includes carbon nanotubes and a binder.

For the purpose of providing an electromagnetic wave absorber capable of holding excellent performance over a long period of time, the electromagnetic wave absorber includes: a dielectric layer B including a polymer film and having a first surface and a second surface; a resistive layer A formed on the first surface of the dielectric layer Band containing indium tin oxide as a main component; and an electrically conductive layer C formed on the second surface of the dielectric layer B and having a sheet resistance lower than that of the resistive layer A, wherein the indium tin oxide in the resistive layer A contains 20 to 40 wt. % of tin oxide based on the total weight of the indium tin oxide.

For the purpose of providing an electromagnetic wave absorber usable for radar having a high revolution and sufficiently adaptable to a plurality of radars different in frequency, the bandwidth of a frequency band in which an electromagnetic wave absorption amount is not less than 20 dB is not less than 2 GHz, within a frequency band of 60 to 90 GHz.

A radio wave absorbing material including a fluoropolymer. The fluoropolymer contains a vinylidene fluoride unit, and the radio wave absorbing material absorbs a radio wave having a frequency in a range of 1 MHz to 100 MHz.