An article includes a first region, and a second region disposed from the first region within a distance equal to or less than a width of the first region. An emissivity of infrared light in a first wavelength in the first region and the second region is equal to or less than 90%, and a reflectance of visible light in a second wavelength in the first region and the second region is equal to or less than 10%. A difference between an average emissivity (%) of infrared light in a wavelength equal to or greater than 8 m and equal to or less than 13 m in the first region, and an average emissivity (%) of infrared light in a wavelength equal to or greater than 8 m and equal to or less than 13 m in the second region is equal to or greater than 5%.

An method for making a shielding assembly includes the steps of: forming a plurality of active layers, wherein each active layer of the plurality of active layers includes a base material and a fluorescent molecule; and forming a multi-layer laminate including the plurality of active layers.

A transparency includes a transparent substrate and a plurality of electrically conductive lines on the transparent substrate, at least one of the electrically conductive lines intersecting at least one other electrically conductive line, and at least one of the electrically conductive lines having a width of no more than 50 ?m to reduce distraction resulting from optical diffraction of light transmitted through or reflected by the transparency as compared to a transparency comprising electrically conductive lines having a width greater than 50 ?m. A coated substrate includes: a substrate; a dielectric layer on the substrate; and a sensor including a conductive layer on the dielectric layer, where at least one layer selected from the dielectric layer and the conductive layer is formed by at least one method selected from lithography, inkjet printing, and aerosol jet printing.

A plastics film with improved energy-shielding properties, suitable for application on a transparent or translucent surface, such as glass, and which is at least 50% transparent for visible light, further characterized in that it includes at least one plastic carrier layer with on top thereof as a functional layer a metallic layer consisting of antimony and/or arsenic together with indium and/or gallium, wherein the plastics film contains a total of indium (In), gallium (Ga), antimony (Sb) and arsenic (As) together, which are present as an alloy, such as indium andmonide, gallium andmonide, indium arsenide, indium gallium arsenide and/or gallium arsenide, of at least 4.0 ppm by weight and at most 25.0 ppm by weight. A glass plate to which the film is attached, is described as are objects provided with the glass plate. Methods are described for the production of the film, the glass plate and the objects.

A method of coating an optical substrate includes depositing a semiconductor coating over a surface of an optical substrate, wherein the semiconductor coating has broadband optical transmittance. Portions of the semiconductor coating are doped to form a spatially varied pattern of doped semiconductor in the semiconductor coating. The method includes annealing the semiconductor coating to do at least one of: increase oxygen in undoped areas of the semiconductor coating; or reduce oxygen in doped areas of the semiconductor coating.

An electromagnetic shielding assembly may include a transparent substrate layer and a transparent active layer positioned with respect to the substrate, wherein the active layer is configured to absorb electromagnetic radiation having a first wavelength and emit electromagnetic radiation having a second wavelength, the second wavelength being different than the first wavelength, the active layer includes fluorescent molecules combined with a base material, the fluorescent molecules being configured to absorb electromagnetic radiation having the first wavelength and emit the electromagnetic radiation having the second wavelength, wherein the first wavelength is in a visible electromagnetic spectrum and the second wavelength is in a non-visible electromagnetic spectrum.

An electromagnetic wave shielding film having: a base substrate; and an electromagnetic wave shielding layer disposed on the base substrate, where the thickness of the electromagnetic wave shielding layer is 1 nm to 50 nm. In addition, the shielding layer includes: a first layer on the base substrate; a second layer on the first layer; and a third layer on the second layer, wherein the first layer, the second layer, and the third layer include copper sulfide.

Provided is a conductive film in which wire visibility of a metal wire is suppressed and visibility is improved. The conductive film includes a substrate and a conductive layer that is disposed on the substrate and consists of a metal wire, with a width of 2 m or less, a height of 1 m or less, and the metal wire has a metal layer, a first blackening layer, and a second blackening layer in this order from a side of the substrate. The first and second blackening layers contain a metal atom and at least one selected from the group consisting of an oxygen atom and a nitrogen atom. In the first blackening layer, a content of the metal atom at an intermediate position in a thickness direction is larger than a content of the metal atom at an intermediate position in the second blackening layer in a thickness direction.

An electromagnetic interference shield is disclosed. The electromagnetic interference shield includes an optically transparent substrate and a metallic coating on the optically transparent substrate. The metal coating is characterized by a plurality of apertures aligned in a pattern that is defined by a deterministic relation. Distances between each of the plurality of apertures and an observation point in an associated image plane are uncorrelated.

A method of manufacturing a structurally competent, EMI-shielded IR window includes using a mathematical model that combines the Sotoodeh and Nag models to determine an optimal thickness and dopant concentration of a doped layer of GaAs or GaP. A slab of GaAs or GaP is prepared, and a doped layer of the same material having the optimal thickness and dopant concentration is applied thereto. In embodiments, the doped layer is applied by an HVPE method such as LP-HVPE, which can also provide enhanced GaAs transparency near 1 micron. The Drude model can be applied to assist in selecting an anti-reflective coating. If the model predicts that the requirements of an application cannot be met by a doped layer alone, a doped layer can be applied that exceeds the required IR transparency, and a metallic grid can be applied to improve the EMI shielding, thereby satisfying the requirements.