A semiconductor package assembly includes a circuit board, a heat dissipating element and a semiconductor device. The circuit board includes a conductive pattern. The heat dissipating element is located on the circuit board, where the heat dissipating element is connected to the conductive pattern. The semiconductor device is located on the circuit board and next to the heat dissipating element, where the semiconductor device is thermally connected to the heat dissipating element through the conductive pattern.

Embodiments of the present disclosure disclose a flexible printed circuit, a light bar, a backlight module and a liquid crystal display device. The flexible printed circuit includes a substrate and a plurality of groups of LED pads located on the substrate, wherein each group of the LED pads is configured to mount one LED lamp bead, each group of the LED pads includes a first pad, a second pad and a third pad, the firs pad, the second pad and the third pad are arranged sequentially in a first direction, the first pad and the second pad both receive a first voltage signal, the third pad receives a second voltage signal, and the first voltage signal is different from the second voltage signal.

Various embodiments described herein provide for printed circuit boards with one or more spaces for embedding components, which can be used to implement a memory sub-system.

The present application relates to the technical field of circuit board fabricating, and provides a method for fabricating an asymmetric board, the method includes fabricating a master board, fabricating a second sub-board, thermal compression bonding the master board and the second sub-board, and milling a finished board; further includes at least one of the following three steps: laying copper on the connection positions of the master board except for the second copper layer of an outermost layer to obtain laying copper area, digging copper on the connection positions of the third copper layer, and after the step of milling the finished board, on each of the impositions, performing depth control milling at the connection positions from a side of the second sub-board on each imposition to obtain a depth control groove.

Provided are flexible hybrid interconnect circuits and methods of forming thereof. A flexible hybrid interconnect circuit comprises multiple conductive layers, stacked and spaced apart along the thickness of the circuit. Each conductive layer comprises one or more conductive elements, one of which is operable as a high frequency (HF) signal line. Other conductive elements, in the same and other conductive layers, form an electromagnetic shield around the HF signal line. Some conductive elements in the same circuit are used for electrical power transmission. All conductive elements are supported by one or more inner dielectric layers and enclosed by outer dielectric layers. The overall stack is thin and flexible and may be conformally attached to a non-planar surface. Each conductive layer may be formed by patterning the same metallic sheet. Multiple pattern sheets are laminated together with inner and outer dielectric layers to form a flexible hybrid interconnect circuit.

A circuit board according to an embodiment includes an insulating layer; a circuit pattern disposed on an upper surface of the insulating layer; a first solder resist disposed on an upper surface of the insulating layer and having a height smaller than a height of the circuit pattern; and a second solder resist disposed on an upper surface of the first solder resist and including a first portion having an upper surface lower than an upper surface of the circuit pattern and a second. portion having an upper surface higher than the upper surface of the circuit pattern, wherein the circuit pattern includes: a plurality of first circuit patterns disposed on an upper surface of a first region of the insulating layer, and a plurality of second circuit patterns disposed on an upper surface of a second region of the insulating layer; wherein the first portion of the second solder resist is disposed between the plurality of first circuit patterns to have an upper surface lower than an upper surface of the first circuit pattern; and wherein the second portion of the second solder resist has an upper surface higher than an upper surface of the second circuit pattern, and is disposed to cover the plurality of second circuit patterns between the plurality of second circuit patterns.

A package includes a conductive pad, with a plurality of openings penetrating through the conductive pad. A dielectric layer encircles the conductive pad. The dielectric layer has portions filling the plurality of openings. An Under-Bump Metallurgy (UBM) includes a via portion extending into the dielectric layer to contact the conductive pad. A solder region is overlying and contacting the UBM. An integrated passive device is bonded to the UBM through the solder region.

A porous resin film for a metal layer laminate board and a metal layer laminate board are provided to suppress damage to a metal layer disposed on an inner peripheral surface of a through hole and to have excellent electrical connection reliability even under the high temperature environment. The porous resin film for a metal layer laminate board is used in lamination of a metal layer. The porous resin film for a metal layer laminate board has a minimum thermal expansion coefficient X in a plane direction perpendicular to a thickness direction and a thermal expansion coefficient Z in the thickness direction. In the porous resin film for a metal layer laminate board, a ratio (Z/X) of the thermal expansion coefficient Z in the thickness direction to the minimum thermal expansion coefficient X is 3.5 or less.

A preparation method for a spherical silica powder filler, comprises the following steps: S1, providing spherical polysiloxane comprising T units by means of a hydrolysis condensation reaction of R.sub.1SiX.sub.3, wherein R.sub.1 is hydrogen atom or an independently selectable organic group having 1 to 18 carbon atoms, X is a hydrolyzable group, and the T unit is R.sub.1SiO.sub.3—; and S2, calcining the spherical polysiloxane under the condition of a dry oxidizing gas atmosphere at a calcining temperature between 850° C. and 1200° C., so as to obtain a spherical silica powder filler having a low hydroxyl content. The spherical silica powder filler is composed of at least one selected from Q.sub.1 unit, Q.sub.2 unit, Q.sub.3 unit and Q.sub.4 unit, wherein Q.sub.1 unit is Si(OH).sub.3O—, Q.sub.2 unit is Si(OH).sub.2O.sub.2—,Q.sub.3 unit is SiOHO.sub.3—, Q.sub.4 unit is SiO.sub.4—, and the content of Q.sub.4 unit is greater than or equal to 95%.

A component carrier having a stack with at least one electrically conductive layer structure and at least one electrically insulating layer structure; an opening located at least partially in the stack; and a fill material which is located within the opening. The fill material is a photosensitive material, wherein at least a part of the photosensitive material has undergone a hardening treatment with electromagnetic radiation. A method for manufacturing such a component carrier is further described.