A method of forming an electronic assembly. The method includes covering a patterned conductive layer that is on a dielectric layer with a solder resist; depositing a metal layer on to the solder resist; depositing a photo resist onto the metal layer; patterning the photo resist; etching the metal layer that is exposed from the photo resist to form a metal mask; removing the photo resist; and plasma etching the solder resist that is exposed from the metal mask. An electronic assembly for securing for an electronic card. The electronic assembly includes a patterned conductive layer that is on a dielectric layer; and a solder resist covering the patterned conductive layer and the dielectric layer, wherein the solder resist includes openings that expose the patterned conductive layer, wherein the openings in the solder resist only have organic material on side walls of the respective openings.

An electrical assembly which comprises a substrate and a conformal coating deposited on at least one surface of the substrate by plasma polymerization of a compound of formula (I) and deposition of a resulting polymer of the compound of formula (I), and plasma polymerization of a fluorohydrocarbon and deposition of a resulting polymer of the fluorohydrocarbon, such that the resulting polymer of the compound of formula (I) and the resulting polymer of the fluorohydrocarbon create discrete layers of the conformal coating; wherein the compound of formula (I) is an organic compound.

A polysiloxane film comprises Si—O bonds and has a thickness of 0.3 to 1.5 microns. Adjacent electrodes coated with the polysiloxane film have a leakage current of at most 0.01 mA at 10 V after contact with water. An electrode coated with the polysiloxane film has a contact resistance of at least 0.01 ohms at 1.0 mm of pogo pin compression under a 1.0 N load. The polysiloxane film provides IPx7 protection from ingress of water.

A plasma ashing system includes a plasma generator configured to generate a plasma from a gas source. The system further includes a plasma reaction chamber configured to house a substrate comprising a Parylene coating, wherein the plasma reaction chamber is configured to expose surfaces of the Parylene coating on the substrate to the plasma, wherein the plasma is configured to remove portions of the Parylene coating on the substrate. The system further includes a masking fixture including at least one opening and configured to shield areas of the substrate from plasma ashing, and further including a gasket between the masking fixture and the substrate.

A electronic component including a first protective layer covering the substrate and the conductive tract, a second protective layer covering at least a portion of the first protective layer, wherein the second protective layer includes Parylene, and a third protective layer covering at least a portion of the second protective layer.

Provided herein are methods for manufacturing a multilayer circuit structure having embedded circuits and the multilayer circuit structure made thereby. A substrate having at least one existing circuit on the surface is provided, then a dielectric layer is formed to cover the existing circuit. A metal layer is subsequently formed on the dielectric layer. The metal layer is made into a metal mask with a pattern by photoimaging, then the pattern is transferred to the dielectric layer underneath by plasma etching to create multiple trenches and pads at the same time. After vias are made at the pads, a conductive metal is deposited into the trenches and vias to form an embedded trace layer with excess conductive metal in the dielectric layer. The excess conductive metal is removed to obtain a new circuit embedded in the dielectric layer and is coplanar with the surface of the dielectric layer.

A method of mass spectral analysis in an analytical electrostatic trap (14) is disclosed. The electrostatic trap (14) defines an electrostatic field volume and includes trap electrodes having static and non-ramped potentials. The method comprises injecting a continuous ion beam into the electrostatic field volume.

A method of manufacturing a component for a stretchable electronic device comprises providing a silicon wafer comprising a first surface and a second surface; applying a layer of a conductive metal onto at least a portion of the first surface of the silicon wafer; providing a stretchable silicone substrate having a first surface and a second surface; and plasma bonding at least a portion of the second surface of the silicon wafer to at least a portion of the first surface of the stretchable silicone substrate.

A printed circuit board includes an insulating layer and a circuit layer disposed on the insulating layer. The circuit layer includes a first circuit pattern and a second circuit pattern. Each of the first and second circuit patterns has a first side surface, a second side surface opposing the first side surface, and a top surface connected to ends of the first and second side surfaces, when viewed in a cross section direction. The first side surface of the first circuit pattern and the first side surface of the second circuit pattern face each other. A height of the first side surface of the first circuit pattern is greater than a height of the second side surface of the first circuit pattern, and a height of the first side surface of the second circuit pattern is greater than a height of the second side surface of the second circuit pattern.

Provided is a method for manufacturing a board with a roughened surface and a method for manufacturing a board having a plated layer that allow easily manufacturing the board having a plated layer. One of embodiments is a method for manufacturing a board with a surface roughened for wiring formation. The method for manufacturing a board includes performing laser ablation on a board containing a resin at least on a surface of the board. A laser light irradiated in the laser ablation is a laser light having a pulse width of 1 ps or less, a wavelength of 320 nm or more, and an output of 1 W or less.