Provided is a memory device including an array of memory cells. A first bit-line coupled to memory cells of a first column of the array of memory cells. The first bit-line is disposed on a first metal layer. A second bit-line is coupled to the first bit-line. The second bit-line is disposed on a second metal layer and coupled to the first bit-line by at least one via. A word line is coupled to a row of the array of memory cells.

Provided is a memory device including an array of memory cells. A first bit-line coupled to memory cells of a first column of the array of memory cells. The first bit-line is disposed on a first metal layer. A second bit-line is coupled to the first bit-line. The second bit-line is disposed on a second metal layer and coupled to the first bit-line by at least one via. A word line is coupled to a row of the array of memory cells.

Integrated circuits described herein implement an x-input logic gate. The integrated circuit includes a plurality of Schottky diodes that includes x Schottky diodes and a plurality of source-follower transistors that includes x source-follower transistors. Each respective source-follower transistor of the plurality of source-follower transistors includes a respective gate node that is coupled to a respective Schottky diode. A first source-follower transistor of the plurality of source-follower transistors is connected serially to a second source-follower transistor of the plurality of source-follower transistors.

A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P- and NSi beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.

A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region including first and second regions, and a peri region more adjacent to the second region than adjacent to the first region, first and second lower electrodes disposed in the first and second regions, respectively, first and second lower support patterns disposed on outer walls of the first and second lower electrodes, respectively, an upper support pattern disposed on outer walls of the first and second lower electrodes, and being on and spaced apart from the first and second lower support patterns, a dielectric layer disposed on surfaces of the first and second lower electrodes, the first and second lower support patterns, and the upper support pattern, and an upper electrode disposed on a surface of the dielectric layer, wherein thickness of the first lower support pattern is smaller than thickness of the second lower support pattern.

A chip package used as a logic drive, includes: multiple semiconductor chips, a polymer layer horizontally between the semiconductor chips; multiple metal layers over the semiconductor chips and polymer layer, wherein the metal layers are connected to the semiconductor chips and extend across edges of the semiconductor chips, wherein one of the metal layers has a thickness between 0.5 and 5 micrometers and a trace width between 0.5 and 5 micrometers; multiple dielectric layers each between neighboring two of the metal layers and over the semiconductor chips and polymer layer, wherein the dielectric layers extend across the edges of the semiconductor chips, wherein one of the dielectric layers has a thickness between 0.5 and 5 micrometers; and multiple metal bumps on a top one of the metal layers, wherein one of the semiconductor chips is a FPGA IC chip, and another one of the semiconductor chips is a NVMIC chip.

A chip package used as a logic drive, includes: multiple semiconductor chips, a polymer layer horizontally between the semiconductor chips; multiple metal layers over the semiconductor chips and polymer layer, wherein the metal layers are connected to the semiconductor chips and extend across edges of the semiconductor chips, wherein one of the metal layers has a thickness between 0.5 and 5 micrometers and a trace width between 0.5 and 5 micrometers; multiple dielectric layers each between neighboring two of the metal layers and over the semiconductor chips and polymer layer, wherein the dielectric layers extend across the edges of the semiconductor chips, wherein one of the dielectric layers has a thickness between 0.5 and 5 micrometers; and multiple metal bumps on a top one of the metal layers, wherein one of the semiconductor chips is a FPGA IC chip, and another one of the semiconductor chips is a NVMIC chip.

An integrated circuit includes a substrate and at least one component unfavorably sensitive to compressive stress which is arranged at least partially within an active region of the substrate limited by an insulating region. To address compressive stress in the active region, the circuit further includes at least one electrically inactive trench located at least in the insulating region and containing an internal area configured to reduce compressive stress in the active region. The internal area is filled with polysilicon. The polysilicon filled trench may further extend through the insulating region and into the substrate.

A chip package used as a logic drive, includes: multiple semiconductor chips, a polymer layer horizontally between the semiconductor chips; multiple metal layers over the semiconductor chips and polymer layer, wherein the metal layers are connected to the semiconductor chips and extend across edges of the semiconductor chips, wherein one of the metal layers has a thickness between 0.5 and 5 micrometers and a trace width between 0.5 and 5 micrometers; multiple dielectric layers each between neighboring two of the metal layers and over the semiconductor chips and polymer layer, wherein the dielectric layers extend across the edges of the semiconductor chips, wherein one of the dielectric layers has a thickness between 0.5 and 5 micrometers; and multiple metal bumps on a top one of the metal layers, wherein one of the semiconductor chips is a FPGA IC chip, and another one of the semiconductor chips is a NVMIC chip.

A memory device is provided. The memory device includes a substrate and a first stack structure. The first stack structure includes a tunneling layer. The tunneling layer includes Si.sub.xO.sub.yN.sub.z, wherein x:y is 1:0.1 to 1:10, and x:z is 1:0.1 to 1:10. The first stack structure further includes a charge layer disposed over the tunneling layer and a first silicon oxide layer disposed over the charge layer. The first stack structure further includes a first gate line disposed over the first silicon oxide layer. The memory device further includes a source line doped region disposed in the substrate and disposed at the first side of the first stack structure. The memory device further includes a bit line doped region disposed in the substrate and disposed at the second side of the first stack structure. A method for manufacturing the memory device is also provided.