Hybrid high electron mobility field-effect transistors including inorganic channels and organic gate barrier layers are used in some applications for forming high resolution active matrix displays. Arrays of such high electron mobility field-effect transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes. The organic gate barrier layers are operative to suppress both electron and hole transport between the inorganic channel layer and the gate electrodes of the high electron mobility field-effect transistors.

In one aspect, composite materials including a thin-film layer of lateral p-n junctions are described herein, which can be employed in circuits or various components of electrical devices. Briefly, a composite material comprises a thin-film layer including p-type regions alternating with n-type regions along a face of the thin-film layer, the p-type regions comprising electrically conductive particles dispersed in a first organic carrier and the n-type regions comprising electrically conductive particles dispersed in a second organic carrier, wherein p-n junctions are established at interfaces between the p-type and n-type regions. As described further herein, the thin-film layer is flexible, permitting the thin-film to be folded or arranged into a number of configurations to provide various circuits or components of electrical devices.

A method of fabricating a diode includes forming a first semiconductor layer having a first portion and a second portion extending from the first portion on a substrate; forming first and second electrodes on the substrate, the first electrode extending over and being in contact with the first portion of the first semiconductor layer; forming an insulting film to cover the first electrode and the first portion of the first semiconductor layer; and forming a second semiconductor layer having a first portion and a second portion extending from the first portion on the substrate. The second portion of the second semiconductor layer overlapping with the second portion of the first semiconductor layer to define a vertically stacked heterojunction therewith. The first portion of the second semiconductor layer extending over and being in contact with the second electrode. Each of the first and second semiconductor layers includes an atomically thin semiconductor.

A composite diode (100) includes a first conductive sheet, (110) a second conductive sheet, (120) and a nonlinear polymer composite material (130) sandwiched therebetween. The nonlinear polymer composite material comprises nonlinear inorganic particles (150) retained in a polymeric binder material (140). Methods of making the composite diode, and electronic devices including them, are also disclosed.

The present invention provides: a film that comprises single-layer carbon nanotubes having shapes which enable the characteristics thereof to be sufficiently exhibited; and a process for producing the film. The film, which comprises single-layer carbon nanotubes, has portions where single-layer carbon nanotubes are densely present and portions where single-layer carbon nanotubes are sparsely present, the dense portions forming a pseudo-honeycomb structure in a surface of the film.

A method of fabricating a diode includes forming a first semiconductor layer having a first portion and a second portion extending from the first portion on a substrate; forming first and second electrodes on the substrate, the first electrode extending over and being in contact with the first portion of the first semiconductor layer; forming an insulting film to cover the first electrode and the first portion of the first semiconductor layer; and forming a second semiconductor layer having a first portion and a second portion extending from the first portion on the substrate. The second portion of the second semiconductor layer overlapping with the second portion of the first semiconductor layer to define a vertically stacked heterojunction therewith. The first portion of the second semiconductor layer extending over and being in contact with the second electrode. Each of the first and second semiconductor layers includes an atomically thin semiconductor.

A perovskite material that has a perovskite crystal lattice having a formula of C.sub.xM.sub.yX.sub.z, where x, y, and z, are real numbers. Bulky organic cations reside near a surface or a grain boundary of the perovskite crystal lattice. C includes one or more cations selected from the group consisting of Group 1 metals, Group 2 metals, methylammonium, formamidinium, guanidinium, and ethene tetramine. M includes one or more metals each selected from the group consisting of Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg, and Zr and combinations thereof. X includes one or more anions each selected from the group consisting of halides, sulfides, selenides, and combinations thereof.

A perovskite material that has a perovskite crystal lattice having a formula of C.sub.xM.sub.yX.sub.z, where x, y, and z, are real numbers. Bulky organic cations reside near a surface or a grain boundary of the perovskite crystal lattice. C includes one or more cations selected from the group consisting of Group 1 metals, Group 2 metals, methylammonium, formamidinium, guanidinium, and ethene tetramine. M includes one or more metals each selected from the group consisting of Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg, and Zr and combinations thereof. X includes one or more anions each selected from the group consisting of halides, sulfides, selenides, and combinations thereof.

Hybrid high electron mobility field-effect transistors including inorganic channels and organic gate barrier layers are used in some applications for forming high resolution active matrix displays. Arrays of such high electron mobility field-effect transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes. The organic gate barrier layers are operative to suppress both electron and hole transport between the inorganic channel layer and the gate electrodes of the high electron mobility field-effect transistors.

Hybrid high electron mobility field-effect transistors including inorganic channels and organic gate barrier layers are used in some applications for forming high resolution active matrix displays. Arrays of such high electron mobility field-effect transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes. The organic gate barrier layers are operative to suppress both electron and hole transport between the inorganic channel layer and the gate electrodes of the high electron mobility field-effect transistors.