A method of forming a compound having the formula:

##STR00001##

includes the reaction:

##STR00002##

n the presence of a base comprising teat-butyl lithium, lithium diisopropylamide, sodium hydroxide, potassium hydroxide, lithium hydroxide, a potassium alkoxide or a sodium alkoxide to achieve a yield of at least 90%, wherein X is a halo atom selected from the group consisting of Cl, Br and I.

Provided is a compound that is excellent in chemical stability, has a high solubility in a solvent, and exhibits an excellent carrier mobility.

A compound represented by Formula (1):

##STR00001## where in Formula (1), X.sup.1, X.sup.2, X.sup.3, and R.sup.1 to R.sup.10 are as defined in the specification.

An organic thin film transistor includes a gate electrode, an organic semiconductor layer overlapped with the gate electrode, a hydrophilic nanolayer on the organic semiconductor layer, and a source electrode and a drain electrode electrically connected to the organic semiconductor layer.

Ultra-narrow bandgap Non Fullerene Acceptors (NFAs) comprising an A-D-A′-D-A structure or an A-D-A′-D′-A′-D-A structure were designed, synthesized, and characterized (where A, A′ are organic acceptor moieties and D and D′ are organic donor moieties). Exemplary NFA materials have narrow bandgap (0.86 eV-0.99 eV). Photovoltaic devices and Near Infrared photodetector devices based on these compositions above were synthesized with controlled amounts of solvents and additives. A photodetector having a specific detectivity of 2.41×10.sup.12 Jones (D*) at a wavelength of 1040 nm was achieved.

Provided are devices and methods to detect the presence of volatile organic compounds related to the presence of a disease state in a biological sample. The devices may include a detection moiety such as a polynucleoide in electronic communication with a semiconductor such as graphene or a carbon nanotube.

An organic molecule is disclosed comprising: a first chemical unit having a structure according, to Formula I
and ##STR00001## two second chemical units, which in each case are the same or different in each occurrence, having a structure according to Formula II, ##STR00002##
wherein, in each case, the first chemical unit is connected to the two second chemical units via a single bond.

A perovskite material that has a perovskite crystal lattice having a formula of C.sub.xM.sub.yX.sub.z, and alkyl polyammonium cations disposed within or at a surface of the perovskite crystal lattice; wherein x, y, and z, are real numbers; C comprises one or more cations selected from the group consisting of Group 1 metals, Group 2 metals, ammonium, formamidinium, guanidinium, and ethene tetramine; M comprises one or more metals each selected from the group consisting of Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg, and Zr, and combinations thereof and X comprises one or more anions each selected from the group consisting of halides, pseudohalides, chalcogenides, and combinations thereof.

A method for producing a patterned organic film includes: forming a hydrophobic organic film on a hydrophilic and non-water-soluble first substrate using a coating method, pressing the organic film formed on the first substrate against a convex portion of a stamp having the convex portion and a concave portion, transferring the organic film to the convex portion by applying water or an aqueous solution to an interface between the first substrate and the organic film, and pressing the organic film transferred to the convex portion against a second substrate to transfer the organic film to the second substrate to obtain a patterned organic film, wherein at least one of the organic film and the second substrate is an organic semiconductor.

The invention provides a display apparatus and a method for manufacturing the same. The display apparatus includes a substrate and a thin-film transistor. The thin-film transistor includes a semiconductor layer disposed on the substrate and includes a gate electrode overlapping the semiconductor layer and insulated from the semiconductor layer. The semiconductor layer includes a polysilicon layer and an organic layer. The polysilicon layer has a first surface and has an uneven surface overlapping the first surface. The organic layer is disposed on the uneven surface of polysilicon layer and includes an organic semiconductor material.

A display device is provided. A first transistor, a second transistor, and a third transistor are disposed above the surface of a substrate. The first transistor includes a first semiconductor and a first gate electrode. The first semiconductor includes a silicon semiconductor. The first gate electrode overlaps the first semiconductor in view of the normal direction of the surface. The second transistor includes a second semiconductor including a first oxide semiconductor. The third transistor includes a third semiconductor and a third gate electrode. The third semiconductor includes a second oxide semiconductor. The third gate electrode overlaps the third semiconductor in view of the normal direction of the surface. A first electrode is disposed above and electrically connected to the third semiconductor. The first electrode overlaps the third gate electrode in a cross-sectional view of the display device.