A first object of the present invention is to provide a photoelectric conversion element having a high external quantum efficiency and small variation in response. A second object of the present invention is to provide an imaging element, an optical sensor, and a compound related to the photoelectric conversion element.

The photoelectric conversion element includes, in the following order, a conductive film, a photoelectric conversion film, and a transparent conductive film, in which the photoelectric conversion film contains a compound represented by Formula (1).

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A thin film transistor array panel and a manufacturing method are disclosed herein. The thin film transistor array panel includes a data line, a first block of a source electrode, a third block of a drain electrode, and an electrode layer which are formed by a first metal layer disposed on a baseplate; a second block of the source electrode, a fourth block of the drain electrode are formed by a second metal layer which is disposed on the first metal layer. The first block and the second block overlap to combine integrally. The third block and the fourth block overlap to combine integrally. The present invention can decrease the electrical resistance of each of the source electrode and the drain electrode.

A compound having the following formula:

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which can also be embedded into a conjugated oligomeric of polymeric backbone, is proposed for optical and electro optical applications.

An organic field effect transistor includes a channel structure having a photoalignment layer and an organic semiconductor layer disposed directly over the photoalignment layer, where a charge carrier mobility varies along a thickness direction of the channel structure. The channel structure may define an active area between a source and a drain of the transistor and may include alternating layers of at least two photoalignment layers and at least two organic semiconductor layers. Each photoalignment layer is configured to influence an orientation of molecules within an overlying organic semiconductor layer and hence impact the mobility of charge carriers within the device active area while also advantageously decreasing the OFF current of the device.

An organic compound with a long lifetime and high emission efficiency is provided. An organic compound represented by General Formula (G1) is provided. In the formula, any one of X.sup.1 to X.sup.4 represents N, another one represents C, and the others represent C or N. Any one of C is bonded to a group represented by General Formula (r1), and the others are bonded to hydrogen (H), an alkyl (R) group, a cycloalkyl (Cy) group, an aryl (Ar) group, or a heteroaryl (Het) group. Ar.sup.1 represents an aromatic hydrocarbon, and is fused to an adjacent ring at a given site. When Ar.sup.1 represents a benzene ring, the benzene ring includes an Ar group or a Het group. Q and Z represent O or S. Any of R.sup.31 to R.sup.34 represents a bond to any one of X.sup.1 to X.sup.4, and the others represent H, an R group, a Cy group, an Ar group, or a Het group. Any one of R.sup.35 to R.sup.38 represents a polycyclic ring aromatic hydrocarbon group or a Het group, and the others represent H, an R group, a Cy group, an Ar group, or a Het group.

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An organic compound with a long lifetime and high emission efficiency is provided. An organic compound represented by General Formula (G1) is provided. In the formula, any one of X.sup.1 to X.sup.4 represents N, another one represents C, and the others represent C or N. Any one of C is bonded to a group represented by General Formula (r1), and the others are bonded to hydrogen (H), an alkyl (R) group, a cycloalkyl (Cy) group, an aryl (Ar) group, or a heteroaryl (Het) group. Ar.sup.1 represents an aromatic hydrocarbon, and is fused to an adjacent ring at a given site. When Ar.sup.1 represents a benzene ring, the benzene ring includes an Ar group or a Het group. Q and Z represent O or S. Any of R.sup.31 to R.sup.34 represents a bond to any one of X.sup.1 to X.sup.4, and the others represent H, an R group, a Cy group, an Ar group, or a Het group. Any one of R.sup.35 to R.sup.38 represents a polycyclic ring aromatic hydrocarbon group or a Het group, and the others represent H, an R group, a Cy group, an Ar group, or a Het group.

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Provided are a polymer thin-film transistor and a method of fabricating the same. Donor-acceptor copolymer-based field-effect transistors (FETs) have attracted considerable attention from technological and academic perspectives due to their low band gap, high mobility, low cost, easy solution processability, flexibility, and stretchability. Large-area films can be formed through meniscus-guided coating among various solution-processing techniques. 29-Diketopyrrolopyrrole-selenophene vinylene selenophene (29-DPP-SVS) donor-acceptor copolymer-based FETs have already shown excellent performance due to their short π-π stacking distance and strong π-π interaction. Charge carrier mobility of these types of semiconductor materials significantly depends on an applied electric field. Accordingly, detailed analysis of the electric-field dependency of charge carrier mobility is necessary to understand the transport mechanism within the material. Therefore, 29-DPP-S VS-based FETs are fabricated by varying the blade coating (BC) speed of a semiconductor layer. The effect of the BC speed on the electrical characteristics of the FETs is studied through the analysis of electric-field-dependent mobility. The results show that the charge carrier mobility of different FETs depends on the applied electric field and that the type of dependency is Poole-Frenkel. At an optimized BC speed (2 mm s.sup.−1), the device shows maximum zero-field mobility (3.39 cm.sup.2V.sup.−1s.sup.−1) due to the low trap density within the conductive channel.

A transistor device (10) is disclosed comprising a source electrode (14) a drain electrode (12) and an enzyme (31) for facilitating generation of a charge carrier from an analyte. The transistor device also comprises a polymer layer (30) for retaining the enzyme (31), the polymer layer (30) being conductive to the charge carrier. The device also comprises an ohmic conductor (32) in contact with said polymer layer (30) for applying a gate voltage to said polymer layer (30). The device also comprises an organic semiconducting layer (18) connecting the source electrode (14) to the drain electrode (12). Also disclosed is a method of making and using the device (10).

The present invention relates to a process for the preparation of a top-gate, bottom-contact organic field effect transistor on a substrate, which organic field effect transistor comprises source and drain electrodes, a semiconducting layer, a cured first dielectric layer and a gate electrode, and which process comprises the steps of: i) applying a composition comprising an organic semiconducting material to form the semiconducting layer, ii) applying a composition comprising a first dielectric material and a crosslinking agent carrying at least two azide groups to form a first dielectric layer, iii) curing portions of the first dielectric layer by light treatment, iv) removing the uncured portions of the first dielectric layer, and v) removing the portions of the semiconducting layer that are not covered by the cured first dielectric layer, wherein the first dielectric material comprises a star-shaped polymer consisting of at least one polymer block A and at least two polymer blocks B, wherein each polymer block B is attached to the polymer block A, and wherein at least 60 mol % of the repeat units of polymer block B are selected from the group consisting of Formulas (1A), (1B), (1C), (1D), (1E) and (1F), wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7 and R.sup.8 are independently and at each occurrence H or C.sub.1-C.sub.10-alkyl. ##STR00001##

A field-effect transistor including at least: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode, wherein the semiconductor layer contains a carbon nanotube, and the gate insulating layer contains a polymer having inorganic particles bound thereto. Provided is a field-effect transistor and a method for producing the field-effect transistor, wherein the field-effect transistor causes decreased leak current and furthermore enables a semiconductor solution to be uniformly applied.