A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle θ2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.

A flexible organic light-emitting display device and a method of manufacturing the same. The flexible organic light-emitting display device includes a metal oxide infiltrated layer as part of at least one of a plurality of organic layers stacked on and around an organic light-emitting device.

The present disclosure provides an organic semiconductor single crystal film that can be disposed on a desired substrate and has a thickness thinner than that of a conventional film. The present disclosure is directed to an organic semiconductor device comprising: a substrate; and an organic semiconductor single crystal film on the substrate, wherein an average film thickness of the organic semiconductor single crystal film is 2 to 100 nm, and at least a portion of a surface of the substrate in contact with the organic semiconductor single crystal film is hydrophobic, solvent soluble, non-heat resistant, or a combination thereof.

Provided is a semiconductor device and a method of manufacturing the semiconductor device that is capable of improving the connection reliability between an electronic element and a substrate in a semiconductor device in which the electronic element is fixed to the substrate. The semiconductor device includes: a substrate 10 provided with wirings and wiring connection parts 12 connected to the wirings; electronic elements 20, 30, 40, and 50 electrically connected to the wiring connection parts 12 and fixed to the substrate; and a resin film 60 laminated on one surface of the substrate 10, conforming to the shapes of the electronic elements 20, 30, 40, and 50, and covering the electronic elements 20, 30, 40, and 50.

Provided is a semiconductor device and a method of manufacturing the semiconductor device that is capable of improving the connection reliability between an electronic element and a substrate in a semiconductor device in which the electronic element is fixed to the substrate. The semiconductor device includes: a substrate 10 provided with wirings and wiring connection parts 12 connected to the wirings; electronic elements 20, 30, 40, and 50 electrically connected to the wiring connection parts 12 and fixed to the substrate; and a resin film 60 laminated on one surface of the substrate 10, conforming to the shapes of the electronic elements 20, 30, 40, and 50, and covering the electronic elements 20, 30, 40, and 50.

A compound of Formula (I)
D-S.sup.1-A-S.sup.2—B.sup.1,  Formula (I) wherein: A represents a conjugated chain of from 1 to 20 aromatic moieties independently selected from the group consisting of aromatic moieties, heteroaromatic moieties and E moieties, provided that A includes at least one E moiety, wherein E is selected from the group consisting of: E.sup.1 being a dibenzo[d,b]silole moiety of the structure: ##STR00001## E.sup.2 being a moiety of the structure: ##STR00002## and E.sup.3 being a moiety of the structure: ##STR00003## wherein E is connected in the conjugated chain of A and optionally to S.sup.1 or to S.sup.2 through covalent bonds at Y and Z; wherein each R is independently selected from the group consisting of straight chain or branched C.sub.1-C.sub.20 alkyl and C.sub.2-C.sub.20 alkenyl, optionally wherein from 1 to 5 CH.sub.2 groups are each replaced by an oxygen, provided that no acetal, ketal, peroxide or vinyl ether is present in the R group, and optionally wherein each H bonded to a C in each R group may independently be replaced by a halogen; wherein the X moieties are the same and are selected from the group consisting of hydrogen, straight chain or branched C.sub.1-C.sub.8 alkyl, straight chain or branched C.sub.1-C.sub.8 alkoxyl and a halogen, wherein each E moiety may have the same or different X moieties, wherein W is either an oxygen or sulfur atom, D represents a moiety having one or more cross-linkable functionalities, S.sup.1 and S.sup.2 are flexible linker groups; and B.sup.1 represents a moiety having one or more cross-linkable functionalities or a hydrogen atom, with the proviso that when B.sup.1 represents a hydrogen atom, D represents a moiety having at least two cross-linkable functionalities.

Provided are an organic thin film transistor having high bendability and high stability in air and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a gas barrier layer consisting of a resin layer and an inorganic layer; a transistor element that is formed on one main surface side of the gas barrier layer and includes a gate electrode, an insulating film, an organic semiconductor layer, a source electrode, and a drain electrode; and a sealing layer that is laminated on a side of the transistor element opposite to the gas barrier layer through an adhesive layer, in which a thickness of the resin layer in the gas barrier layer is less than a thickness ranging from the inorganic layer to the sealing layer in the gas barrier layer.

A method of forming a compound having the formula (I′): (I′) includes the reaction: (II′) in the presence of a base, wherein X is a halo atom selected from the group consisting of Cl, Br and I. ##STR00001##

Devices, structures, materials and methods for carbon enabled vertical light emitting transistors (VLETs) and light emitting displays (LEDs) are provided. In particular, architectures for vertical polymer light emitting transistors (VPLETs) for active matrix organic light emitting displays (AMOLEDs) and AMOLEDs incorporating such VPLETs are described. Carbon electrodes (such as from graphene) alone or in combination with conjugated light emitting polymers (LEPs) and dielectric materials are utilized in forming organic light emitting transistors (OLETs). Combinations of thin films of ionic gels, LEDs, carbon electrodes and relevant substrates and gates are utilized to construct LETs, including heterojunction VOLETs.

Provided are an organic electronic element comprising a light emitting layer composed of a mixture of compounds capable of improving luminous efficiency, stability, and lifespan of the element, and an electronic device therefor.