The present application relates to a self-assembled monolayer suitable for the modification of electrodes comprised in electronic devices as well as to such electronic devices. The present application also relates to a method for depositing such self-assembled monolayer onto an electrode as well as to the manufacturing of the corresponding devices.

A printed electrical connection structure includes a substrate having one or more electrical connection pads and a micro-transfer printed component having one or more connection posts. Each connection post is in electrical contact with a connection pad. A resin is disposed between and in contact with the substrate and the component. The resin has a reflow temperature less than a cure temperature. The resin repeatedly flows at the reflow temperature when temperature-cycled between an operating temperature and the reflow temperature but does not flow after the resin is exposed to a cure temperature. A solder can be disposed on the connection post or the connection pad. After printing and reflow, the component can be tested and, if the component fails, another component is micro-transfer printed to the substrate, the resin is reflowed again, the other component is tested and, if it passes the test, the resin is finally cured.

Disclosed are a memristor device, a method of fabricating the same, a synaptic device including a memristor device, and a neuromorphic device including a synaptic device. The disclosed memristor device may comprise a first electrode, a second electrode disposed to be spaced apart from the first electrode; and a resistance changing layer including a copolymer between the first electrode and the second electrode. The copolymer may be a copolymer of a first monomer and a second monomer, and the first polymer formed from the first monomer may have a property that diffusion of metal ions is faster than that of the second polymer formed from the second monomer. The second polymer may have a lower diffusivity of metal ions as compared with the first polymer. The first monomer may include vinylimidazole (VI). The second monomer may include 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3). The copolymer may include p(V3D3-co-VI).

Examples are disclosed relating to reducing orders of diffraction patterns in phase modulating devices. An example phase modulating device includes a phase modulating layer having first and second opposing sides, a common electrode adjacent the first side of the phase modulating layer, a plurality of pixel electrodes adjacent the second side of the phase modulating layer, and blurring material disposed between the phase modulating layer and the pixel electrodes. In the example phase modulating device, the blurring material is configured to smooth phase transitions in the phase modulating layer between localized areas associated with the pixel electrodes, the pixel electrodes have a pixel pitch by which the pixel electrodes are distributed along the phase modulating layer, and the pixel electrodes are separated from one another by an inter-pixel gap, where the ratio of the inter-pixel gap to the pixel pitch is between 0.50 and 1.0.

A semiconductor element includes a substrate, a gate electrode, an active layer, a contact layer, a first electrode, and a second electrode. The gate electrode is disposed on the substrate. The gate insulation layer is disposed on the gate electrode. The active layer is disposed on the gate insulation layer, and includes a first end portion and a second end portion that is opposite the first end portion. The contact layer overlaps the second end portion of the active layer. The first electrode is in contact with the first end portion. The second electrode is spaced apart from the first electrode, and is in contact with the contact layer.

The invention relates to a method for manufacturing an electronic device, particularly a device including a flexible and/or low-cost substrate and/or carbon nanotubes, and also relates to electronic devices produced using said method. The method for manufacturing an electronic device, including a substrate mad of a material M and an active semiconductor material layer (3), includes the following steps: a) providing a carrier (10) made of an alkali metal salt or alkaline earth metal salt, preferably sodium chloride (NaCl) or potassium chloride (KCl); optionally, b) depositing a dielectric material layer (2) onto one surface of the carrier; c) forming an active semiconductor material layer (3) on one surface of the carrier when Step b) is not implemented or on the free surface of the layer when Step b) is implemented; d) forming different components of the electronic device on and/or under the layer; e) depositing a protective layer onto the layer stack, obtained in Step d), of the different components of the electronic device, said protective layer being made of the material M required for the substrate (1); and f) removing the carrier (10) by dissolving one or more of the components of said electronic device on a substrate different from the substrate (1). In said removal of the carrier, the method does not include any step for manufacturing one or more of the components of said electronic device on a substrate different from the substrate (1). The invention is of use in the field of electronics in particular.

A method of making a stack of the type comprising a first electrode, an active layer, and a second electrode, for use in an electronic device, in particular of the organic photodetector type or the organic solar cell type, the method comprising the following steps: a) depositing a first layer (2) of conductive material on a substrate (1) in order to form the first electrode; b) depositing an active layer (3) in the form of a thin organic semiconductor layer, this layer including non-continuous zones (30); c) locally eliminating the first conductive layer (2) through the non-continuous zones (30) of the active layer by chemical attack; and d) depositing a second layer (4) of conductive material on the active layer (3) in order to form the second conductive electrode.

A flexible wireless communication device with high position accuracy and low cost by a simple process is described, including a wireless communication device and a method for manufacturing a wireless communication device formed by bonding a first film substrate on which at least a circuit is formed and a second film substrate on which an antenna is formed, in which the circuit includes a transistor, and the transistor is formed by a step of forming a conductive pattern on the first film substrate, a step of forming an insulating layer on the film substrate on which the conductive pattern is formed, and a step of applying a solution including an organic semiconductor and/or a carbon material on the insulating layer and drying the solution to form a semiconductor layer.

Disclosed are an organic semiconductor element, a fabrication method thereof, woven and non-woven fabric structures therewith, and a semiconductor device therewith. The organic semiconductor element comprising an organic semiconductor layer; a linear source electrode and a linear drain electrode provided in the organic semiconductor layer and spaced apart from and parallel to each other; a linear gate electrode provided on the organic semiconductor layer to cross the linear source and drain electrodes; and an electrolyte layer in contact with the organic semiconductor layer and the linear gate electrode.

An organic light emitting diode display is provided that may include a first substrate, a plurality of electrodes on the first substrate and spaced apart from each other, a pixel defining layer on the plurality of electrodes, spacers on the pixel defining layer, and a second substrate on the spacers. The pixel defining layer includes a plurality of openings spaced apart from each other and respectively open to the plurality of electrodes. The spacers on the pixel defining layer are at crossing points of a plurality of virtual lines, the spacers crossing spaces between adjacent openings of the plurality of openings.