The present invention relates to a multilayer conductive system of metal oxides comprising: i. a substrate; ii. a layer of a crystalline binary metal oxide deposited on the substrate (i); and iii. a layer of a crystalline conductive metal oxide having a crystalline structure of perovskite type superposed over the layer of binary metal oxide (ii); the binary metal oxide of the layer (ii) having a local lattice mismatch of less than 5% with respect to that of the metal oxide of the layer (iii); provided that when the metal oxide of perovskite type of the layer (iii) is a crystalline transparent conductive metal oxide, the substrate (i) is transparent and the thickness of the crystalline binary metal oxide layer (ii) is <20 nm, preferably <10 nm, most preferentially 5-7 nm.

The invention also relates to a method for preparing the multilayer system, an electronic component comprising same, as well as to the use of the multilayer system in a variety of applications in particular in optoelectronics and solar technologies.

The invention also relates to the use of a thin layer of crystalline binary metal oxide as a seed layer for the crystal growth of a metal oxide having a crystalline structure of perovskite type, the binary metal oxide having a local lattice mismatch of less than 5% with respect to the lattice of the metal oxide of perovskite type.

The invention provides for polymer structures and their preparation and resulting novel functionalities including open-shell character and high intrinsic conductivity with wide-range tenability. Electrical conductivity can be further modulated by introducing or blending with materials, fillers, dopants, and/or additives. The materials or resultant composites of the invention can be processed by various techniques into different forms to realize multiple applications.

An organic light emitting diode display including a first substrate, a plurality of electrodes on the first substrate and spaced apart from each other, a pixel defining layer on the plurality of electrodes, spacers on the pixel defining layer, and a second substrate on the spacers. The pixel defining layer includes a plurality of openings spaced apart from each other and respectively open to the plurality of electrodes. The spacers on the pixel defining layer are at crossing points of a plurality of virtual lines, the spacers crossing spaces between adjacent openings of the plurality of openings.

Embodiments herein describe techniques for a semiconductor device including a semiconductor substrate, a first device of a first wafer, and a second device at back end of a second wafer, where the first device is bonded with the second device. A first metal electrode of the first device within a first dielectric layer is coupled to an n-type oxide TFT having a channel layer that includes an oxide semiconductor material. A second metal electrode of the second device within a second dielectric layer is coupled to p-type organic TFT having a channel layer that includes an organic material. The first dielectric layer is bonded to the second dielectric layer, and the first metal electrode is bonded to the second metal electrode. The n-type oxide TFT and the p-type organic TFT form a symmetrical pair of transistors of a CMOS circuit. Other embodiments may be described and/or claimed.

Photovoltaic devices, and methods of fabricating photovoltaic devices. The photovoltaic devices may include a first electrode, at least one quantum dot layer, at least one semiconductor layer, and a second electrode. The first electrode may include a layer including Cr and one or more silver contacts.

A transistor and a method for fabricating the transistor are provided. The semiconductor structure transistor includes a base, a low-dimensional material layer, a plurality of spacers, a source, a drain, and a gate stack. The low-dimensional material layer is provided above the base. The plurality of spacers is provided on a surface of the low-dimensional material layer away from the base and spaced apart from each other. The source and the drain are provided on the surface of the low-dimensional material layer away from the base, respectively. The gate stack is provided on the surface of the low-dimensional material layer away from the base and between the source and the drain, in which the gate stack, the source and the drain are separated by the spacers, and in contact with the spacers, respectively. Therefore, the transistor has advantages of excellent comprehensive performance, high process compatibility, and good device uniformity.

Photovoltaic devices, and methods of fabricating photovoltaic devices. The photovoltaic devices may include a first electrode, at least one quantum dot layer, at least one semiconductor layer, and a second electrode. The first electrode may include a layer including Cr and one or more silver contacts.

Devices comprising a resistance-switching polymer film are described. Also described are methods of making the devices comprising the resistance-switching polymer film.

The present disclosure provides fine electrodes in which an organic semiconductor does not easily change with time, and which can be applied to manufacturing of a practical integrated circuit of an organic semiconductor device. The present disclosure relates to electrodes for source/drain of an organic semiconductor device, comprising 10 or more sets of electrodes, wherein a channel length between the electrodes in each set is 200 μm or less, and the electrodes in each set have a surface with a surface roughness Rq of 2 nm or less.

Provided are a conductive composite structure for an electronic device, a method of preparing the conductive composite structure, an electrode for an electronic device including the conductive composite structure, and an electronic device including the conductive composite structure. The conductive composite structure may contain graphene and an organic composite layer including a conductive polymer having a work function of about 5.3 eV or lower, and has a sheet resistance deviation of about 10% or less.