H10K10/82

Display panel and preparation method thereof, method for determining failure of encapsulation part, and display device

A display panel includes a first substrate, a light-emitting component located on the first substrate, and an encapsulation part located on the first substrate. A receiving cavity is formed between the encapsulation part and the first substrate. The receiving cavity has a light-emitting region inside. The light-emitting component is located within the light-emitting region. The display panel further includes at least one water vapor detecting part located on the first substrate and inside the receiving cavity. The at least one water vapor detecting part is disposed outside the light-emitting region. Each of the water vapor detecting part has different light transmittance before and after water absorption.

MEMRISTOR DEVICE, METHOD OF FABRICATING THEREOF, SYNAPTIC DEVICE INCLUDING MEMRISTOR DEVICE AND NEUROMORPHIC DEVICE INCLUDING SYNAPTIC DEVICE

Disclosed are a memristor device, a method of fabricating the same, a synaptic device including a memristor device, and a neuromorphic device including a synaptic device. The disclosed memristor device may comprise a first electrode, a second electrode disposed to be spaced apart from the first electrode; and a resistance changing layer including a copolymer between the first electrode and the second electrode. The copolymer may be a copolymer of a first monomer and a second monomer, and the first polymer formed from the first monomer may have a property that diffusion of metal ions is faster than that of the second polymer formed from the second monomer. The second polymer may have a lower diffusivity of metal ions as compared with the first polymer. The first monomer may include vinylimidazole (VI). The second monomer may include 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3). The copolymer may include p(V3D3-co-VI).

MEMRISTOR DEVICE, METHOD OF FABRICATING THEREOF, SYNAPTIC DEVICE INCLUDING MEMRISTOR DEVICE AND NEUROMORPHIC DEVICE INCLUDING SYNAPTIC DEVICE

Disclosed are a memristor device, a method of fabricating the same, a synaptic device including a memristor device, and a neuromorphic device including a synaptic device. The disclosed memristor device may comprise a first electrode, a second electrode disposed to be spaced apart from the first electrode; and a resistance changing layer including a copolymer between the first electrode and the second electrode. The copolymer may be a copolymer of a first monomer and a second monomer, and the first polymer formed from the first monomer may have a property that diffusion of metal ions is faster than that of the second polymer formed from the second monomer. The second polymer may have a lower diffusivity of metal ions as compared with the first polymer. The first monomer may include vinylimidazole (VI). The second monomer may include 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3). The copolymer may include p(V3D3-co-VI).

CURRENT CONTROL SYSTEMS AND METHODS
20210210796 · 2021-07-08 ·

A system that includes an energy device having an active region configured to generate or consume electrical energy provided by an electrical current is discussed. A current limiter is disposed between the energy device and a current collector layer. The current limiter controls the current flow between the energy device and the current collector layer. A plurality of electrochemical transistors (ECTs) are arranged in an array such that each ECT in the array provides localized current control for the energy device. Each ECT includes a gate electrode, a drain electrode, a source electrode, and a channel disposed between the drain and the source electrodes. An electrolyte electrically couples the gate electrode to the channel such that an electrical signal at the gate electrode controls electrical conductivity of the channel. The current collector layer is a shared drain or source electrode for the ECTs.

NANOWIRE-BASED TRANSPARENT CONDUCTORS AND APPLICATIONS THEREOF

A transparent conductor including a conductive layer coated on a substrate is described. More specifically, the conductive layer comprises a network of nanowires that may be embedded in a matrix. The conductive layer is optically clear, patternable and is suitable as a transparent electrode in visual display devices such as touch screens, liquid crystal displays, plasma display panels and the like.

Display device including capping layer covered source and drain electrodes

A display device includes: a thin-film transistor on a substrate, the thin-film transistor including on the substrate: an active layer; a gate electrode overlapping the active layer; a source electrode and a drain electrode electrically connected to the active layer and including a first metal material; and a first capping layer which covers each of the source electrode and the drain electrode, the first capping layer having a Young's modulus greater than that of the first metal material.

Conductor and method of manufacturing the same

A conductor includes (i) a substrate, (ii) a transparent conductive film formed on the substrate and including a silver nanowire, (iii) a metal film formed over the transparent conductive film such that at least a portion thereof overlaps the transparent conductive film, and (iv) a buffer film provided between the transparent conductive film and the metal film, the buffer film having adhesion to each of the transparent conductive film and the metal film, and not impeding conductivity between the transparent conductive film and the metal film. Preferably, the buffer film is formed of an organic material having respective functional groups capable of bonding to the transparent conductive film and the metal film.

MEMORY CELL AND FORMING METHOD THEREOF

A memory cell includes a first conductive line, a lower electrode, a carbon nano-tube (CNT) layer, a middle electrode, a resistive layer, a top electrode and a second conductive line. The first conductive line is disposed over a substrate. The lower electrode is disposed over the first conductive line. The carbon nano-tube (CNT) layer is disposed over the lower electrode. The middle electrode is disposed over the carbon nano-tube layer, thereby the lower electrode, the carbon nano-tube (CNT) layer and the middle electrode constituting a nanotube memory part . The resistive layer is disposed over the middle electrode. The top electrode is disposed over the resistive layer, thereby the middle electrode, the resistive layer and the top electrode constituting a resistive memory part. The second conductive line is disposed over the top electrode.

MONOMOLECULAR TRANSISTOR

A monomolecular transistor including a first electrode including a first electrode layer and a first metal particle arranged at one end of the first electrode layer, a second electrode including a first electrode layer and a first metal particle arranged at one end of the first electrode layer, a third electrode insulated from the first electrode and the second electrode, a -conjugated molecule having a -conjugated skeleton. The first metal particle and the second metal particle face each other. The third electrode is arranged adjacent to the gap in which the first metal particle and the second metal particle face each other, and is spaced from the first metal particle and the second metal particle, the -conjugated molecule is arranged in a gap between the first metal particle and the second metal particle.

Open-Shell Conjugated Polymer Conductors, Composites, and Compositions

The invention provides for polymer structures and their preparation and resulting novel functionalities including open-shell character and high intrinsic conductivity with wide-range tenability. Electrical conductivity can be further modulated by introducing or blending with materials, fillers, dopants, and/or additives. The materials or resultant composites of the invention can be processed by various techniques into different forms to realize multiple applications.