A semiconductor device includes a substrate, a first electrode located on the substrate, a metal halide perovskite layer located on the first electrode, a second electrode located on the metal halide perovskite layer, and passivation molecules that passivate the metal halide perovskite layer. The metal halide perovskite layer has (1) a top surface defect located in a top surface and (2) an inter-grain defect located at an interface between two adjacent grains, and the passivation molecules passivate at least one of the top surface defect and the inter-grain defect.

An organic electronic device including a substrate, an organic electronic element formed on the substrate, and an encapsulation film encapsulating the organic electronic element. The organic electronic element includes a transparent electrode formed on the substrate, and a light emitting organic material layer formed on the transparent electrode. The light emitting organic material layer includes a hole transport layer, an emitting layer and an electron transport layer. The encapsulation film includes a pressure-sensitive adhesive layer. The pressure-sensitive adhesive layer includes a pressure-sensitive adhesive composition or a crosslinked product thereof. The pressure-sensitive adhesive composition includes a polymer derived from butylene, and has a Mooney viscosity (η*) of 5000 Pa.Math.s to 10.sup.7 Pa.Math.s measured by a shear stress using a planar jig having a diameter of 8 mm at a strain of 5%, a frequency of 1 Hz and any one temperature point in the range of 30° C. to 150° C.

Provided are an organic thin film transistor having high bendability and high stability in air and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a gas barrier layer consisting of a resin layer and an inorganic layer; a transistor element that is formed on one main surface side of the gas barrier layer and includes a gate electrode, an insulating film, an organic semiconductor layer, a source electrode, and a drain electrode; and a sealing layer that is laminated on a side of the transistor element opposite to the gas barrier layer through an adhesive layer, in which a thickness of the resin layer in the gas barrier layer is less than a thickness ranging from the inorganic layer to the sealing layer in the gas barrier layer.

A technique, comprising: forming in situ on a support substrate: a first metal layer; a light-absorbing layer after the first metal layer; a conductor pattern after the light-absorbing layer; and a semiconductor layer after the conductor pattern; patterning the semiconductor layer using a resist mask to form a semiconductor pattern defining one or more semiconductor channels of one or more semiconductor devices; and patterning the light-absorbing layer using the resist mask and the conductor pattern, so as to selectively retain the light-absorbing layer in regions that are occupied by at least one of the resist mask and the conductor pattern.

A light emitting display device includes a lower substrate, a thin film transistor on the lower substrate, a passivation layer disposed on the thin film transistor and including hydrogen, an overcoating layer disposed on the passivation layer and planarizing the passivation layer, a light emitting element disposed on the overcoating layer and including an anode, a light emitting layer on the anode, and a cathode on the light emitting layer, a bank disposed on the overcoating layer and defining a light emitting area, an adhesive layer on the light emitting element and the bank, and a hydrogen absorbing layer disposed on the adhesive layer and including a hydrogen absorbing filler, wherein a side end of the bank is disposed more inwardly than side ends of the adhesive layer and the hydrogen absorbing layer, wherein the side ends of the adhesive layer and the hydrogen absorbing layer are disposed more inwardly than a side end of the overcoating layer.

The present disclosure relates to an electroluminescent lighting device having high aperture ratio. The present disclosure provides an electroluminescent light device comprising: a substrate having an emission area and a non-emission area surrounding the emission area; a power line disposed in the emission area and defining an open area; a buffer layer covering the substrate having the power line; a power contact hole formed at the buffer layer for exposing some of the power line; an anode layer disposed on the buffer layer and contacting the power line through the power contact hole; a passivation layer covering the power contact hole on the anode layer; an emission layer on the anode layer; and a cathode layer on the emission layer.

A percolation network of functionalised reduced graphene oxide flakes, the percolation network configured to allow for hopping of charge carriers between adjacent reduced graphene oxide flakes to enable a flow of charge carriers through the percolation network, and wherein the reduced graphene oxide flakes are functionalised to facilitate detectable changes in the flow of charge carriers in response to a stimulus to the percolation network.

Disclosed is an organic light emitting display device including a dam structure disposed in a non-display area of a substrate and an alignment mark disposed outside the dam structure. The alignment mark is not covered by, and does not overlap with, the dam structure, because the alignment mark is disposed outside the dame structure. Thus, a scribing process may be performed smoothly.

An electronic device includes a substrate, a first oxygen- and water-tight protection layer covering the substrate, at least one electronic component located on the first protection layer and having at least one organic semiconductor region, an oxygen- and water-tight encapsulation layer, the oxygen- and water-tight encapsulation layer having an epoxy or acrylate glue totally covering the organic semiconductor region, a second oxygen- and water-tight protection layer totally covering the encapsulation layer, and a support layer covering the second oxygen- and water-tight protection layer.

Methods of encapsulating an environmentally sensitive device. The methods involve temporarily laminating a flexible substrate to a rigid support using a reversible adhesive for processing, reversing the reversible adhesive, and removing the device from the rigid support.