A composite interface transport material-based perovskite photovoltaic, light emission and light detection multi-functional device and a preparation method therefor. The multi-functional device comprises a transparent conductive glass, a composite electron transport layer, a perovskite active layer, a composite hole transport layer and a metal electrode layer which are sequentially arranged in a stacked manner from bottom to top. The work functions of the interface transport layers are adjusted by means of the multi-element interface transport materials, so that the work functions of the electron transport layer and the hole transport layer are respectively levelled with conduction band and valence band positions of the perovskite active layer. According to experiment result comparisons, the photoelectric conversion efficiency and the luminous efficiency of the perovskite multi-functional device, after energy band regulation, are significantly increased.

There is disclosed ultrathin film material templating layers that force the morphology of subsequently grown electrically active thin films have been found to increase the performance of small molecule organic photovoltaic (OPV) cells. There is disclosed electron-transporting material, such as hexaazatriphenylene-hexacarbonitrile (HAT-CN) can be used as a templating material that forces donor materials, such as copper phthalocyanine (CuPc) to assume a vertical-standing morphology when deposited onto its surface on an electrode, such as an indium tin oxide (ITO) electrode. It has been shown that for a device with HAT-CN as the templating buffer layer, the fill factor and short circuit current of CuPc:C60 OPVs were both improved compared with cells lacking the HAT-CN template. This is explained by the reduction of the series resistance due to the improved crystallinity of CuPc grown onto the ITO surface.

The invention relates to a process for producing a multi-junction device comprising a layer of a crystalline A/M/X material, which crystalline A/M/X material comprises a compound of formula [A].sub.a[M].sub.b[X].sub.c, wherein: [A] comprises one or more A cations; [M] comprises one or more M cations which are metal or metalloid cations; [X] comprises one or more X anions; a is a number from 1 to 6; b is a number from 1 to 6; and c is a number from 1 to 18; and wherein the process comprises forming the layer of the crystalline A/M/X material by disposing a film-forming solution on a substrate, wherein the film-forming solution comprises: (a) one or more M cations; and (b) a solvent; wherein the solvent comprises (i) an aprotic solvent; and (ii) an organic amine, and wherein the substrate comprises: a photoactive region comprising a photoactive material, and a charge recombination layer which is disposed on the photoactive region by solution-deposition. Multi junction devices are also the subject of the present invention.

Optoelectronic devices having an improved architecture are disclosed, such as p-i-n hybrid solar cells. These solar cells are characterized by including an insulating mesoporous scaffold in between the hole transportation layer and the photoactive layer, in such a way that the photoactive layer infiltrates the insulating mesoporous scaffold and contacts the hole transportation layer. The infiltration of the photoactive layer in the mesoporous scaffold improves the performance of the hole transportation layer and increases the photovoltaic performance of the solar cell. Solar cells, according to the present invention are manufactured in their entirety below 150° C. and present advantages in terms of cost and ease of manufacture, performance, and energy efficiency, stability over time and reproducibility.

[Problem] To provide a method for manufacturing an element which does not lead to the occurrence of a short due to etching, and which suppresses the deterioration of a photoelectric conversion layer. [Solution] An element manufacturing method, wherein the method includes the following steps which are performed on an element material including an electrode formed on a substrate, the electrode having a first electrode and a second electrode which are separated from each other, and a photoelectric conversion layer formed in a region that includes the first electrode and the second electrode: a step in which a first back-side electrode and a second back-side electrode are formed at positions on the photoelectric conversion layer corresponding to a first electrode and a second electrode, wherein the first back-side electrode and the second back-side electrode are not connected; a step in which etching is performed using the first back-side electrode and the second back-side electrode as a mask; and a connection electrode formation step in which a connection electrode for connecting the first back-side electrode and the second back-side electrode is formed.

Disclosed are a film and a photoelectric device including the compound of Chemical Formula 1 and configured to selectively absorb light in a blue wavelength region, and an image sensor and electronic device including the same:

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In Chemical Formula 1, each substituent is the same as defined in the detailed description.

The present technology relates to a solid-state imaging element, a method for manufacturing a solid-state imaging element, and a solid-state imaging apparatus, capable of improving blue light photoelectric conversion efficiency of an organic photoelectric conversion element.

An organic photoelectric conversion layer is formed by mixing a first organic semiconductor containing a perylene derivative having characteristics of absorbing blue light, a second organic semiconductor having characteristics of absorbing blue light and also having characteristics as a hole transport material having crystallinity, and a third organic semiconductor containing a fullerene derivative. The present technology can be applied to a solid-state imaging element.

The disclosure provides an efficient and stable inorganic lead-free perovskite solar cell and a method for preparing the same. The solar cell includes a conductive substrate, a PEDOT: PSS layer, an inorganic lead-free CsSnI.sub.3 perovskite layer, a C60 layer, a BCP layer, and a metal counter electrode layer arranged in order from bottom to top, wherein the inorganic lead-free CsSnI.sub.3 perovskite layer is a CsSnI.sub.3 perovskite layer passivated by a thioureas small-molecule organic compound.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and an organic photoelectric conversion layer provided between the first electrode and the second electrode and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material. The second organic semiconductor material has a Highest Occupied Molecular Orbital (HOMO) level being deeper than a Lowest Unoccupied Molecular Orbital (LUMO) level of the first organic semiconductor material and having a difference of 1.0 eV or more and 2.0 eV or less from the LUMO level of the first organic semiconductor material. The third organic semiconductor material has a crystalline property and has a linear absorption coefficient of 10000 cm.sup.−1 or less in a visible light region and an optical absorption edge wavelength of 550 nm or less.

Acenes, such as aza-acenes are attractive materials for organic semiconductors, specifically for n-type materials. There are disclosed new derivatives of acenes that are fabricated using novel synthesis. For example, the disclosed fabrication strategies have allowed for the first time new aza-tetracene and aza-pentacene derivatives. The HOMO and LUMO energy levels of these materials are tunable through appropriate substitution and as predicted, deepened. There are also disclosed organic photosensitive devices comprising at least one aza-acene such as aza-tetracene and aza-pentacene.