Photodiodes configured to convert incident photons in the short-wave infrared (SWIR) to electric current, where the photodiodes have a PbS/PbCl.sub.x core/shell nanocrystal absorber layer. The PbCl.sub.x shell in the PbS/PbCl.sub.x nanocrystals provide native passivation in the (100) crystal facets and enable removal of pre-device processing ligands and ligand exchange on the (111) crystal facets of the PbS/PbCl.sub.x nanocrystals such that the photodiode exhibits reduced current densities under reverse bias and greater infrared photoresponse, providing improved device performance as compared to photodiodes having absorber layers formed from PbS core nanocrystals alone.

An imaging device includes: a semiconductor substrate; a plurality of pixel electrodes located above the semiconductor substrate and each electrically connected to the semiconductor substrate; a counter electrode located above the plurality of pixel electrodes; a first photoelectric conversion layer located between the counter electrode and the plurality of pixel electrodes; and at least one first light-shielding body located in the first photoelectric conversion layer or above the first photoelectric conversion layer. The first photoelectric conversion layer contains semiconductor quantum dots that absorb light in a first wavelength range and a coating material that covers the semiconductor quantum dots, the coating material absorbing light in a second wavelength range, the coating material emitting fluorescence in a third wavelength range. The at least one first light-shielding body absorbs or reflects light with a wavelength in at least part of the second wavelength range.

The invention pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one organic solvent; (b) at least one population of nanostructures comprising a core and at least one shell, wherein the nanostructures comprise inorganic ligands bound to the surface of the nanostructures; and (c) at least one poly(alkylene oxide) additive. The nanostructure compositions comprising at least one poly(alkylene oxide) additive show improved solubility in organic solvents. And, the nanostructure compositions show increased suitability for use in inkjet printing. The disclosure also provides methods of producing emissive layers using the nanostructure compositions.

There is provided a semiconductor film that includes an aggregate of semiconductor quantum dots that contain a Pb atom, and a ligand that is coordinated to the semiconductor quantum dot, in which a ratio of the number of Pb atoms having a valence of 1 or less to the number of Pb atoms having a valence of 2 is 0.20 or less. There are also provided a photodetector element, an image sensor, and a manufacturing method for a semiconductor film.

Disclosed are a photodetector using a photoelectric conversion effect wherein current changes according to light; and a method of manufacturing the photodetector. More particularly, a photodetector manufactured using a transition metal dichalcogen compound having high sensitivity to wavelengths of light in the visible light region by forming a sensor layer utilizing a transition metal dichalcogen compound such that the thickness of the sensor layer can be adjusted is provided.

There is provided a photodetector element having a photoelectric conversion layer containing an aggregate of semiconductor quantum dots QD1 that contain a metal atom and containing a ligand L1 that is coordinated to the semiconductor quantum dot QD1, and a hole transport layer containing an aggregate of semiconductor quantum dots QD2 that contains a metal atom and containing a ligand L2 that is coordinated to the semiconductor quantum dot QD2, the hole transport layer being arranged on the photoelectric conversion layer, in which a band gap Eg2 of the semiconductor quantum dot QD2 is larger than a band gap Eg1 of the semiconductor quantum dot QD1, and a difference between the band gap Eg2 of the semiconductor quantum dot QD2 and the band gap Eg1 of the semiconductor quantum dot QD1 is 0.10 eV or more. There is also provided an image sensor including the photodetector element.

An element includes an electron transportation layer containing nanoparticles, a QD layer containing QD phosphor particles, and a mixed layer sandwiched between the electron transportation layer and the QD layer to be adjacent to these layers. The mixed layer contains QD phosphor particles and nanoparticles.

An optical element includes a photoelectric conversion film and an inorganic substance-containing film containing at least one selected from the group consisting of a metal nitride and a metal oxynitride, in which the photoelectric conversion film contains a quantum dot or at least one compound semiconductor selected from the group consisting of a III-V group compound semiconductor, a II-VI group compound semiconductor, and a IV-IV group compound semiconductor, and the optical density of an inorganic substance-containing film is 0.5 or more per 1.0 μm of a film thickness at a wavelength of 1,550 nm.

A photovoltaic device (10) comprising a photoactive body between two electrodes (contact 1, contact 2). The body comprises semiconductor particles (24) embedded in a semiconductor matrix (22). The particles and matrix are electronically or optically coupled so that charge carriers generated in the particles are transferred directly or indirectly to the matrix. The matrix transports positive charge carriers to one of the electrodes and negative charge carriers to the other electrode. The particles are configured so that they do not form a charge carrier transport network to either of the electrodes and so perform the function of charge carrier generation but not charge carrier transport.

Disclosed is a preparation method for crosslinked nanoparticle film. The preparation method comprises: dispersing nanoparticles in a solvent and uniformly mixing same, so as to obtain a nanoparticle solution; and using the nanoparticle solution to prepare a nanoparticle thin film by means of a solution method, and introducing a gas combination to promote a crosslinking reaction, so as to obtain a crosslinked nanoparticle thin film. By introducing a gas combination during film formation of nanoparticles, the present disclosure promotes the crosslinking among particles, and thus increases the electrical coupling among particles, lowers the potential barrier of carrier transmission, and increases the carrier mobility, thereby greatly improving the electrical properties of the thin film.