A method of making nanoparticles including a semiconducting nitride is provided. The method includes reacting precursors in a gas phase to form the nanoparticles including the semiconducting nitride. The precursors include at least one of a gallium (Ga) precursor or an indium (In) precursor and a nitrogen (N) precursor. The semiconducting nitride is In.sub.1−xGa.sub.xN, where 0≤x≤1. Structures that include the nanoparticles and systems for making the nanoparticles are also provided.

A photoelectronic device includes an active layer containing inorganic particles, and an oxide semiconductor layer containing zinc (Zn), silicon (Si), and oxygen (O), where the oxide semiconductor layer and the active layer are stacked layers. The photoelectronic device further includes a multilayer transparent electrode over or under the active layer, wherein the oxide semiconductor layer serves as a part of the multilayer transparent electrode.

The present invention relates to the design and fabrication of a device able to efficiently convert broad-spectrum, microwave to X-ray, electromagnetic energy into electricity. Exciton Scavenger fabrication requires intercalation of rare earth ion containing crystallites, quantum-dots, or nanoparticles within a one-dimensional semiconducting material nanoarchitecture, such as arrays of nanowires or nanotubes.

An optical fiber includes an optical fiber core for high-power laser transmission, an optical cladding disposed radially around the optical fiber core, and at least one harvesting cell disposed axially along the optical fiber core, the harvesting cell including an anode surrounding the optical cladding, a photovoltaic layer having a polymer-based photovoltaic material disposed radially around and electrically connected to the anode, and a cathode disposed radially around the photovoltaic layer and electrically connected to the photovoltaic layer.

An photoelectric conversion element in the disclosure is characterized by including: a first conductive layer; a porous hole-blocking layer disposed on the first conductive layer; a porous insulator layer disposed on the porous hole-blocking layer; photoabsorption layers disposed in a pore of the porous hole-blocking layer and in a pore of the porous insulator layer and containing an organic-based photoelectric conversion material; an electron-blocking layer disposed on the porous insulator layer; and a second conductive layer disposed on the electron-blocking layer.

An photoelectric conversion element in the disclosure is characterized by including: a first conductive layer; a porous hole-blocking layer disposed on the first conductive layer; a porous insulator layer disposed on the porous hole-blocking layer; photoabsorption layers disposed in a pore of the porous hole-blocking layer and in a pore of the porous insulator layer and containing an organic-based photoelectric conversion material; an electron-blocking layer disposed on the porous insulator layer; and a second conductive layer disposed on the electron-blocking layer.

A method of manufacturing an optoelectronic device including the following successive steps: a) forming, on an integrated control circuit previously formed inside and on top of a semiconductor substrate, a plurality of inorganic light-emitting diodes; and b) depositing an active photosensitive semiconductor layer to fill free spaces laterally extending between the inorganic light-emitting diodes.

A photoelectric conversion element includes a first electrode including a plurality of electrodes independent from each other, a second electrode disposed to be opposed to the first electrode, an n-type photoelectric conversion layer including a semiconductor nanoparticle, and a semiconductor layer including an oxide semiconductor material. The semiconductor layer is provided between the first electrode and the n-type photoelectric conversion layer. The n-type photoelectric conversion layer is provided between the first electrode and the second electrode. A carrier density of the n-type photoelectric conversion layer is higher than a carrier density of the semiconductor layer.

A photoelectric conversion element includes a first electrode including a plurality of electrodes independent from each other, a second electrode disposed to be opposed to the first electrode, an n-type photoelectric conversion layer including a semiconductor nanoparticle, and a semiconductor layer including an oxide semiconductor material. The semiconductor layer is provided between the first electrode and the n-type photoelectric conversion layer. The n-type photoelectric conversion layer is provided between the first electrode and the second electrode. A carrier density of the n-type photoelectric conversion layer is higher than a carrier density of the semiconductor layer.

There is provided a semiconductor film including an aggregate of semiconductor quantum dots that contain a metal atom and a ligand that is coordinated to the semiconductor quantum dot, in which a half width at half maximum of an exciton absorption peak in optical characteristics of the semiconductor film is 60 nm or less. There are also provided a manufacturing method for a semiconductor film, a photodetector element, and an image sensor.