There is provided a semiconductor film including an aggregate of semiconductor quantum dots that contain a metal atom and a ligand that is coordinated to the semiconductor quantum dot, in which a half width at half maximum of an exciton absorption peak in optical characteristics of the semiconductor film is 60 nm or less. There are also provided a manufacturing method for a semiconductor film, a photodetector element, and an image sensor.

A detector includes a substrate including a matrix of aramid nanofibers, a distribution of nanoparticles across the matrix of aramid nanofibers, and a plurality of organic capping ligands. Each organic capping ligand of the plurality of organic capping ligands bonds a respective nanoparticle of the plurality of nanoparticles to a respective aramid nanofiber of the matrix of aramid nanofibers. The detector further includes first and second electrodes disposed along opposite sides of the substrate to capture charges generated by photons or particles incident upon the detector. Each nanoparticle of the plurality of nanoparticles has a semiconductor composition.

An object of the present invention is to provide a photoelectric conversion element that exhibits excellent external quantum efficiency and responsiveness to light at all wavelengths in a red wavelength region, a green wavelength region, and a blue wavelength region. Another object of the present invention is to provide an imaging element, an optical sensor, and a compound related to the photoelectric conversion element.

The photoelectric conversion element includes, in the following order, a conductive film, a photoelectric conversion film, and a transparent conductive film, in which the photoelectric conversion film contains a compound represented by Formula (1).

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A method of manufacturing of an ink (100) composition comprises a biphasic ligand exchange process. A first phase liquid (10) comprising a nonpolar solvent (11) with a colloidal suspension of nanoparticles (1) that are capped with a shell of non polar ligands (2) is contacted with a second phase liquid (20) comprising a polar solvent (21) with second ligand (3). The second ligand comprises at least one surface binding head group that has an affinity for binding to the nanoparticle; and an ionically charged tail group. The second ligands displace the first ligands to form a dispersion of the nanoparticles that are capped with a shell of the second ligands in the second phase liquid. The nanoparticles can be separated from the second phase liquid. The separated nanoparticles can be (re)dispersed in a printable liquid medium, e.g. used for printing a photoactive layer.

A method of manufacturing of an ink (100) composition comprises a biphasic ligand exchange process. A first phase liquid (10) comprising a nonpolar solvent (11) with a colloidal suspension of nanoparticles (1) that are capped with a shell of non polar ligands (2) is contacted with a second phase liquid (20) comprising a polar solvent (21) with second ligand (3). The second ligand comprises at least one surface binding head group that has an affinity for binding to the nanoparticle; and an ionically charged tail group. The second ligands displace the first ligands to form a dispersion of the nanoparticles that are capped with a shell of the second ligands in the second phase liquid. The nanoparticles can be separated from the second phase liquid. The separated nanoparticles can be (re)dispersed in a printable liquid medium, e.g. used for printing a photoactive layer.

An optoelectronic device such as a photovoltaic device which has at least one layer, such as an electron transport layer, which comprises a plurality of alternating, oppositely charged layers including metal oxide layers. The metal oxide can be zinc oxide. The plurality of layers can be prepared by layer-by-layer processing in which alternating layers are built up step-by-step due to electrostatic attraction. The efficiency of the device can be increased by this processing method compared to a comparable method like sputtering. The number of layers can be controlled to improve device efficiency. Aqueous solutions can be used which is environmentally friendly. Annealing can be avoided. A quantum dot layer can be used next to the metal oxide layer to form a quantum dot heterojunction solar device.

A metal oxide nanoparticle comprises a metal oxide core of formula M.sub.2O.sub.5, wherein M is tantalum (V) or niobium (V) and alkylsiloxane ligands bonded to the metal oxide core. The alkylsiloxane ligands are selected from the group consisting of isobutylsiloxane, allylsiloxane, vinylsiloxane, n-propyl siloxane, n-butylsiloxane, sec-butyl siloxane, tert-butyl siloxane, phenylsiloxane, n-octylsiloxane, isooctylsiloxane n-dodecyl siloxane, 4 -(trimethyl silyl)phenylsiloxane, para-tolylsiloxane, 4-fluorophenyl siloxane, 4 -chlorophenyl siloxane, 4-bromophenyl siloxane, 4-iodophenylsiloxane, 4-cyanophenyl siloxane, benzylsiloxane, methylsiloxane, ethylsiloxane, 4-(trifluoromethyl)phenylsiloxane, 4 -ammoniumbutylsiloxane, and any combination thereof.

An electronic device and a production method thereof, wherein the electronic device includes: a semiconductor layer comprising a plurality of quantum dots; and a first electrode and a second electrode spaced apart from each other; wherein the plurality of quantum dots do not comprise cadmium, lead, or mercury; wherein the plurality of quantum dots comprise indium and optionally gallium; a Group VA element, wherein the Group VA element comprises antimony, arsenic, or a combination thereof, and a molar ratio of the Group VA element with respect to the Group IIIA metal (e.g., indium) is less than or equal to about 1.2:1, and wherein the semiconductor layer may be disposed between the first electrode and the second electrode.

An electronic device and a production method thereof, wherein the electronic device includes: a semiconductor layer comprising a plurality of quantum dots; and a first electrode and a second electrode spaced apart from each other; wherein the plurality of quantum dots do not comprise cadmium, lead, or mercury; wherein the plurality of quantum dots comprise indium and optionally gallium; a Group VA element, wherein the Group VA element comprises antimony, arsenic, or a combination thereof, and a molar ratio of the Group VA element with respect to the Group IIIA metal (e.g., indium) is less than or equal to about 1.2:1, and wherein the semiconductor layer may be disposed between the first electrode and the second electrode.

Provided are: a light-emitting layer for a perovskite light-emitting device; a method for manufacturing the same; and a perovskite light-emitting device using the same. The method of the present invention for manufacturing a light-emitting layer for an organic and inorganic hybrid perovskite light-emitting device comprises a step of forming a first nanoparticle thin film by coating, on a member for coating a light-emitting layer, a solution comprising organic and inorganic perovskite nanoparticles including an organic and inorganic perovskite nanocrystalline structure. Thereby, a nanoparticle light emitter has therein an organic and inorganic hybrid perovskite having a crystalline structure in which FCC and BCC are combined; forms a lamella structure in which an organic plane and an inorganic plane are alternatively stacked; and can show high color purity since excitons are confined to the inorganic plane. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.