Patent classifications
H10K30/353
Enhanced bulk heterojunction devices prepared by thermal and solvent vapor annealing processes
A method of preparing a bulk heterojunction organic photovoltaic cell through combinations of thermal and solvent vapor annealing are described. Bulk heterojunction films may prepared by known methods such as spin coating, and then exposed to one or more vaporized solvents and thermally annealed in an effort to enhance the crystalline nature of the photoactive materials.
PHOTOELECTRIC CONVERSION ELEMENT, MEASURING METHOD OF THE SAME, SOLID-STATE IMAGING DEVICE, ELECTRONIC DEVICE, AND SOLAR CELL
The present technology relates to a photoelectric conversion element, a measuring method of the same, a solid-state imaging device, an electronic device, and a solar cell capable of further improving a quantum efficiency in a photoelectric conversion element using a photoelectric conversion layer including an organic semiconductor material. The photoelectric conversion element includes two electrodes forming a positive electrode (11) and a negative electrode (14), at least one charge blocking layer (13, 15) arranged between the two electrodes, and a photoelectric conversion layer (12) arranged between the two electrodes. The at least one charge blocking layer is an electron blocking layer (13) or a hole blocking layer (15), and a potential of the charge blocking layer is bent. The present technology is applied to, for example, a solid-state imaging device, a solar cell, and the like having a photoelectric conversion element.
IMAGING ELEMENT, STACKED IMAGING ELEMENT AND SOLID-STATE IMAGING DEVICE, AND INORGANIC OXIDE SEMICONDUCTOR MATERIAL
An imaging element includes a photoelectric conversion section including a first electrode 21, a photoelectric conversion layer 23A including an organic material, and a second electrode 22 that are stacked; an inorganic oxide semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A; and an inorganic oxide semiconductor material included in the inorganic oxide semiconductor material layer 23B contains aluminum (Al) atoms, tin (Sn) atoms, zinc (Zn) atoms, and oxygen (O) atoms.
IMAGING ELEMENT, STACKED IMAGING ELEMENT AND SOLID-STATE IMAGING DEVICE, AND METHOD OF MANUFACTURING IMAGING ELEMENT
An imaging element of the present disclosure includes a photoelectric conversion section including a first electrode 21, a photoelectric conversion layer 23A including an organic material, and a second electrode 22 that are stacked; an inorganic semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A; and a value ΔEN (=EN.sub.anion−EN.sub.cation) is less than 1.695, and preferably 1.624 or less, which results from subtracting an average value EN.sub.cation of electronegativities of cationic species included in the inorganic semiconductor material layer from an average value EN.sub.anion of electronegativities of anionic species included in the inorganic semiconductor material layer 23B.
COMPOUND HAVING AZABENZOXAZOLE RING STRUCTURE AND ORGANIC ELECTROLUMINESCENT ELEMENT
An object of the present invention is to provide, as a material for a highly efficient and highly durable organic EL element, an organic compound having excellent properties, including excellent electron-injecting/transporting capability, hole-blocking capability, and high stability in the form of a thin film. Another object of the present invention is to provide a highly efficient and highly durable organic EL element by using this compound. The compound having an azabenzoxazole ring structure of the present invention has excellent heat resistance, and good electron-transporting capability. An organic EL element having an electron-transporting layer, a hole-blocking layer, a light-emitting layer, or an electron-injecting layer including the compound had favorable element characteristics.
Organic electroluminescent materials and devices
Provided are a compound of Formula I Ir(L.sub.A)x(L.sub.B)y(L.sub.C)z, where x is 1 or 2; y is 1 or 2; z is 0, or 1, with x+y+z=3; L.sub.A is a ligand of Formula II ##STR00001##
PEROVSKITE OPTOELECTRONIC DEVICES AND METHOD FOR MANUFACTURING SAME
Provided are a perovskite optoelectronic device containing an exciton buffer layer, and a method for manufacturing the same. The optoelectronic device of the present invention comprises: an exciton buffer layer in which a first electrode, a conductive layer disposed on the first electrode and comprising a conductive material, and a surface buffer layer containing fluorine-based material having lower surface energy than the conductive material are sequentially deposited; a photoactive layer disposed on the exciton buffer layer and containing a perovskite photoactive layer; and a second electrode disposed on the photoactive layer. Accordingly, a perovskite is formed with a combined FCC and BSS crystal structure in a nanoparticle photoactive layer. The present invention can also form a lamellar or layered structure in which an organic plane and an inorganic plane are alternatively deposited; and an exciton can be bound by the inorganic plane, thereby being capable of expressing high color purity.
Imaging device having a plurality of electrodes with a photoelectric conversion layer forming a photoelectric conversion unit
An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.
FLEXIBLE STRUCTURE PHOTODETECTOR
A photodetector according to an embodiment of the present disclosure includes: a carbon allotrope electrode, wherein the carbon allotrope electrode has an average transmittance in a range from 85% to 95% at a wavelength in a range from 380 nm to 780 nm.
Multijunction organic photovoltaics incorporating solution and vacuum deposited active layers
There is disclosed an organic photovoltaic device comprising at least one first subcell comprising at least one first small molecular weight material deposited by solution processing, and at least one second subcell comprising a weight at least one second small molecular material deposited by vacuum evaporation. Also disclosed herein is a method for preparing an organic photovoltaic device comprising at least one first subcell comprising at least one first small molecular weight material and at least one second subcell comprising at least one second small molecular weight material, the method comprising depositing at least one first small weight material by solution processing; and depositing at least one second small weight material by vacuum evaporation.