A field effect transistor photodetector that can operate in room temperature includes a source electrode, a drain electrode, a channel to allow an electric current to flow between the drain and source electrodes, and a gate electrode to receive a bias voltage for controlling the current in the channel. The photodetector includes a light-absorbing material that absorbs light and traps electric charges. The light-absorbing material is configured to generate one or more charges upon absorbing light having a wavelength within a specified range and to hold the one or more charges. The one or more charges held in the light-absorbing material reduces the current flowing through the channel.

A graphene nanostructure has a nanographene, a π conjugated functional group bonded to the nanographene via a pyrazine skeleton, and at least one Br group and/or at least one CN group introduced into the π conjugated functional group. A graphene nanostructure preferably has an average size of 1 nm or larger to 100 nm or smaller, a band gap of 0.01 eV or higher to 1.2 eV or lower, and/or a HOMO level of −6.0 eV or higher to −4.0 eV or lower. As the π conjugated functional group into which the Br group(s) and/or the CN group(s) are/is introduced, a 4-bromobenzene group, a 4,5-dibromobenzene group, a 5-bromopyridine group, a 5-bromopyrazine group, a benzonitrile group, a phthalonitrile group, or a 2,3-dicyanopyrazine group is desirable.

Each unit pixel includes a photoelectric converter formed above a semiconductor region, an amplifier transistor formed in the semiconductor region, and including a gate electrode connected to the photoelectric converter, a reset transistor configured to reset a potential of the gate electrode, and an isolation region formed in the semiconductor region between the amplifier transistor and the reset transistor to electrically isolate the amplifier transistor from the reset transistor. The amplifier transistor includes a source/drain region. The source/drain region has a single source/drain structure.

The purpose of the present invention is to prevent a decrease in light reflection characteristic and an increase in electric resistance due to oxidation of silver in a semiconductor device including an optical sensor in which silver is used for an anode of a photoconductive film. The present invention has a following structure to solve the problem: A semiconductor device includes a thin film transistor formed on a substrate 100. An electrode connected electrically to the thin film transistor is formed of a silver film 128. A first indium tin oxide (ITO) film 129 is formed on the silver film 128. An alumina (AlOx) film 130 is formed on the first ITO film 129.

A two-dimensional (2D) hybrid perovskite based opto-electric device includes first and second 2D perovskite layers extending along a given plane; an organic layer sandwiched between the first and second 2D perovskite layers, and extending along the given plane; an external organic layer formed on the first 2D perovskite layer and configured to directly face an ambient of the opto-electric device and to extend along the given plane; and electrical pads directly formed over the external organic layer. A roughness of the external organic layer is smaller than 10 nm.

An excitonic device comprises an exciton transmission line comprised of a row of molecules. Propagation of excitons is mediated by an exciton exchange interaction. The gate consists of a molecule “a” that interacts with a proximal molecule via a two-body exciton interaction. If the gate molecule is not excited, it does not couple to the transmission line thereby allowing incoming signals to propagate unimpeded. If the gate molecule is excited, signals are back scattered as a result of the two-body interaction between the exciton residing on “a” and the excitons on the transmission line. The ballistic exciton transistor has industrial applications that extend to at least fast optical switching, optical communication, exciton devices, and exciton-based information processing.

Various graphene-based photodetectors are disclosed. An example photodetector device may include: a substrate; a first antenna component fabricated on the substrate, the first antenna component comprising one or more antenna electrodes; a second antenna component fabricated on the substrate, the second antenna component comprising one or more antenna electrodes; a source region coupled to the first antenna component and the substrate; and a drain region coupled to the second antenna component and the substrate; wherein the one or more antenna electrodes in the first antenna component and the second antenna component are made of graphene.

We disclose herein a hetero-structure comprising: a curved material; at least one layer of a first material rolled around the curved material; at least one intermediate layer rolled on the at least one layer of the first material; and at least one layer of a second material rolled around the at least one intermediate layer.

The present disclosure relates to an all-back-contact photovoltaic device that includes, in order, a substrate, a first electrode having a first surface, an insulator, a second electrode having a second surface, and an active material, where the insulator and the second electrode form a cavity, the active material substantially fills the cavity and is in physical contact with the first surface and the second surface, the insulator includes a first layer and a second layer with the second layer positioned between the first layer and the second contact, and the first layer is constructed of a first material that is different than a second material used to construct the second layer.

An optical sensor includes a substrate, a photoelectric conversion layer, a first electrode, and a second electrode. The photoelectric conversion layer has a first surface facing the substrate, a second surface located opposite the first surface, and at least one side surface connecting the first surface with the second surface. The photoelectric conversion layer is supported by the substrate. The first electrode includes a first portion and a second portion separated from the first portion. The second portion is closer to the second surface than the first portion is. The first electrode is provided on the at least one side surface. The second electrode is provided on the at least one side surface.