A positive-intrinsic-negative (PIN) photosensitive device is provided. A p-type semiconductor layer composed of molybdenum oxide and having valence band energy between valence band energy of an intrinsic semiconductor layer and an upper electrode is used to replace a p-type semiconductor layer used in a conventional PIN photodiode, so that the PIN photodiode may be prepared without using borane gas. More, a difference between valence band energy of the p-type semiconductor layer and the intrinsic semiconductor layer is used to transport holes located in a valence band, so that it is unnecessary to use an active layer of a thin film transistor, so that the PIN photosensitive device may be stacked on the thin film transistor to reduce aperture ratio loss of a display panel.

The present disclosure relates to an image pickup device that enables inhibition of occurrence of color mixture or noise, and an electronic apparatus. The image pickup device of the present disclosure includes an image plane phase difference detection pixel for obtaining a phase difference signal for image plane phase difference AF. The image plane phase difference detection pixel includes: a first photoelectric conversion section that generates an electric charge in response to incident light; an upper electrode section that is one of electrodes disposed facing each other across the first photoelectric conversion section, the upper electrode section being formed on an incident side of the incident light on the first photoelectric conversion section; and a lower electrode section that is another of the electrodes disposed facing each other across the first photoelectric conversion section, the lower electrode section being formed on an opposite side of the incident side of the incident light on the first photoelectric conversion section, the lower electrode section being multiple-divided at a position that avoids a center of the incident light. The present disclosure is applicable to image sensors.

Embodiments related to interlayers (e.g., interlayers comprising a transition metal oxide, a transition metal oxynitride, and/or a transition metal nitride) and associated systems, devices (e.g., photovoltaic devices), and methods are disclosed. In some embodiments, a system for exciton transfer includes a substrate including an inorganic semiconductor. An interlayer may be disposed on the substrate, and a layer including a material that undergoes singlet exciton fission when exposed to electromagnetic radiation may be disposed on the interlayer. The interlayer may be disposed between the substrate and the layer. In some embodiments, a method for manufacturing a system for exciton transfer involves depositing an interlayer onto a substrate that includes an inorganic semiconductor. The method may also include depositing a layer including a material that undergoes singlet exciton fission when exposed to electromagnetic radiation onto the interlayer.

A solid-state imaging element according to an embodiment of the present disclosure includes: a photoelectric conversion layer; an insulation layer provided on one surface of the photoelectric conversion layer and having a first opening; and a pair of electrodes opposed to each other with the photoelectric conversion layer and the insulation layer interposed therebetween. Of the pair of electrodes, one electrode provided on a side on which the insulation layer is located includes a first electrode and a second electrode each of which is independent, and the first electrode is embedded in the first opening provided in the insulation layer to be electrically coupled to the photoelectric conversion layer.

A photoelectric conversion module includes photoelectric conversion elements electrically coupled. The photoelectric conversion elements each sequentially include first electrode, photoelectric conversion layer, and second electrode. The photoelectric conversion module includes first photoelectric conversion element, second photoelectric conversion element, coupling portion to couple the first and second photoelectric conversion elements in series, first partition portion, and second partition portion. The first electrode or the second electrode forming the first photoelectric conversion element includes a contact region in contact with the coupling portion. A value of X/(Y−X) is 0.3 or greater, where X denotes a length of the contact region and Y denotes a predetermined length in the coupling direction around the contact region.

A photoelectric conversion element according to an embodiment of the disclosure includes a first electrode and a second electrode, and an organic semiconductor layer. The first electrode and the second electrode are disposed to face each other. The organic semiconductor layer is provided between the first electrode and the second electrode, and contains a fullerene derivative modified by a substituent having an absorbance smaller than that of a fullerene.

The present disclosure relates to an all-back-contact photovoltaic device that includes, in order, a substrate, a first electrode having a first surface, an insulator, a second electrode having a second surface, and an active material, where the insulator and the second electrode form a cavity, the active material substantially fills the cavity and is in physical contact with the first surface and the second surface, the insulator includes a first layer and a second layer with the second layer positioned between the first layer and the second contact, and the first layer is constructed of a first material that is different than a second material used to construct the second layer.

An optical sensor includes a substrate, a photoelectric conversion layer, a first electrode, and a second electrode. The photoelectric conversion layer has a first surface facing the substrate, a second surface located opposite the first surface, and at least one side surface connecting the first surface with the second surface. The photoelectric conversion layer is supported by the substrate. The first electrode includes a first portion and a second portion separated from the first portion. The second portion is closer to the second surface than the first portion is. The first electrode is provided on the at least one side surface. The second electrode is provided on the at least one side surface.

An opto-electronic device includes: a first electrode; an organic layer disposed over the first electrode; a nucleation promoting coating disposed over the organic layer; a nucleation inhibiting coating covering a first region of the opto-electronic device; and a conductive coating covering a second region of the opto-electronic device.

A photoelectric conversion device in an embodiment includes a first photoelectric conversion part including a first transparent electrode, a first photoelectric conversion layer, and a first counter electrode and a second photoelectric conversion part including a second transparent electrode, a second photoelectric conversion layer, and a second counter electrode, the first photoelectric conversion part and the second photoelectric conversion part being provided on a transparent substrate. The first counter electrode and the second transparent electrode are electrically connected by a connection part. As for the first photoelectric conversion layer and the second photoelectric conversion layer, adjacent portions of the adjacent first and second photoelectric conversion layers are electrically separated by an inactive region having electrical resistance higher than that of the first and second photoelectric conversion layers.