Various embodiments may relate to a process for producing an optoelectronic component. In the process, a carrier is provided. A first electrode is formed upon the carrier. An optically functional layer structure is formed upon the first electrode. A second electrode is formed upon the optically functional layer structure. At least one of the two electrodes is formed by disposing electrically conductive nanowires on a surface on which the corresponding electrode is to be formed, and by heating the nanowires in such a way that they plastically deform.

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed:

##STR00001##

In Chemical Formula 1, each substituent is the same as defined in the detailed description.

To improve specific detectivity. A photodetector element 10 includes: an anode 12; a cathode 16; and an active layer 14 provided between the anode and the cathode and containing a p-type semiconductor material and an n-type semiconductor material, wherein a value (ΔEA+ΔEB) of a sum of a value (ΔEA) obtained by subtracting an absolute value of an energy level of HOMO of the p-type semiconductor material from an absolute value of an energy level of HOMO of the n-type semiconductor material and a value (ΔEB) obtained by subtracting an absolute value of an energy level of LUMO of the p-type semiconductor material from an absolute value of an energy level of LUMO of the n-type semiconductor material is in a range of more than 0 and less than 0.88.

To improve specific detectivity. A photodetector element 10 includes: an anode 12; a cathode 16; and an active layer 14 provided between the anode and the cathode and containing a p-type semiconductor material and an n-type semiconductor material, wherein a value (ΔEA+ΔEB) of a sum of a value (ΔEA) obtained by subtracting an absolute value of an energy level of HOMO of the p-type semiconductor material from an absolute value of an energy level of HOMO of the n-type semiconductor material and a value (ΔEB) obtained by subtracting an absolute value of an energy level of LUMO of the p-type semiconductor material from an absolute value of an energy level of LUMO of the n-type semiconductor material is in a range of more than 0 and less than 0.88.

An optoelectronic semiconductor structure is revealed. The optoelectronic semiconductor structure includes a substrate, a first electrode, an electrode contact, a semiconductor layer, and a second electrode. After a photoactive layer of the semiconductor structure absorbs energy from a light source to generate an exciton, the exciton dissociates into a first carrier and a second carrier. The first carrier is transferred to the first electrode through the first interface layer while the second carrier is transferred from the second electrode to the electrode contact directly by a tunneling effect.

An optoelectronic semiconductor structure is revealed. The optoelectronic semiconductor structure includes a substrate, a first electrode, an electrode contact, a semiconductor layer, and a second electrode. After a photoactive layer of the semiconductor structure absorbs energy from a light source to generate an exciton, the exciton dissociates into a first carrier and a second carrier. The first carrier is transferred to the first electrode through the first interface layer while the second carrier is transferred from the second electrode to the electrode contact directly by a tunneling effect.

A radiation detector includes a first detecting part including a first organic detection layer and a first layer, and a second detecting part including a second organic detection layer. The first layer includes a first material and a first thickness. The second detecting part does not include the first layer. The second detecting part does not include a second layer, or the second detecting part includes the second layer that includes at least one of a second material or a second thickness. The second material is different from the first material. The second thickness is different from the first thickness. The first material includes at least one of a first organic material or a first element. The second material includes at least one of a second organic material or a second element.

Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.

An optoelectronic assembly including an optically active region configured for emitting and/or absorbing light, and an optically inactive region configured for component-external contacting of the optically active region is provided. The optically inactive region includes a dielectric structure and a first electrode on or above a substrate, an organic functional layer structure on the first electrode in physical contact with the first electrode and the dielectric structure, and a second electrode in physical contact with the organic functional layer structure and above the dielectric structure, wherein the organic functional layer structure at least partly overlaps the dielectric structure in such a way that the part of the second electrode above the dielectric structure is free of a physical contact of the second electrode with the dielectric structure.

An organic electronic component contains a substrate, a first electrode, a second electrode and at least one electron transport layer between the first and second electrode. The electron transport layer is a salt-like derivative of a phosphorus oxo compound as n-dopant.