The large-scale artificial synaptic device arrays based on the organic molecule-nanowire heterojunctions with tunable photoconductivity are proposed and demonstrated. The organic thin films of p-type 2,7-dioctyl[1]benzothieno[3,2-b][1] benzothiophene (C8-BTBT) or n-type phenyl-C61-butyric acid methyl ester (PC61BM) are used to wrap the InGaAs nanowire parallel arrays to configure two different type-I heterojunctions, respectively. Due to the difference in carrier injection, persistent negative photoconductivity (NPC) or positive photoconductivity (PPC) are achieved in these heterojunctions. The irradiation with different wavelengths (solar-blind to visible ranges) can stimulate the heterojunction devices, effectively mimicking the synaptic behaviors with two different photoconductivities. Evidently, these photosynaptic devices are illustrated with retina-like behaviors and capabilities for large-area integration, which reveals their promising potential for artificial visual systems.

The large-scale artificial synaptic device arrays based on the organic molecule-nanowire heterojunctions with tunable photoconductivity are proposed and demonstrated. The organic thin films of p-type 2,7-dioctyl[1]benzothieno[3,2-b][1] benzothiophene (C8-BTBT) or n-type phenyl-C61-butyric acid methyl ester (PC61BM) are used to wrap the InGaAs nanowire parallel arrays to configure two different type-I heterojunctions, respectively. Due to the difference in carrier injection, persistent negative photoconductivity (NPC) or positive photoconductivity (PPC) are achieved in these heterojunctions. The irradiation with different wavelengths (solar-blind to visible ranges) can stimulate the heterojunction devices, effectively mimicking the synaptic behaviors with two different photoconductivities. Evidently, these photosynaptic devices are illustrated with retina-like behaviors and capabilities for large-area integration, which reveals their promising potential for artificial visual systems.

A perovskite photodiode includes a first electrode and a second electrode, a perovskite photoelectric conversion layer between the first electrode and the second electrode and including a Pb-free perovskite represented by Chemical Formula 1, and an auxiliary layer between the first electrode and the perovskite photoelectric conversion layer and including an organic compound represented by Chemical Formula 2.

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A perovskite photodiode includes a first electrode and a second electrode, a perovskite photoelectric conversion layer between the first electrode and the second electrode and including a Pb-free perovskite represented by Chemical Formula 1, and an auxiliary layer between the first electrode and the perovskite photoelectric conversion layer and including an organic compound represented by Chemical Formula 2.

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The present disclosure provides a photoelectric conversion element including a first electrode 3, a second electrode 7, a photoelectric conversion layer 5 between the first electrode 3 and the second electrode 7, and a reflection layer 6 between one of the first electrode 3 and the second electrode 7 and the photoelectric conversion layer 5. The wavelength at which the reflectance of the reflection layer 6 is maximum in the visible region is within the range of wavelengths in which the optical absorption coefficient of the photoelectric conversion layer 5 is or more of the maximum optical absorption coefficient in the visible region.

The present disclosure provides a photoelectric conversion element including a first electrode 3, a second electrode 7, a photoelectric conversion layer 5 between the first electrode 3 and the second electrode 7, and a reflection layer 6 between one of the first electrode 3 and the second electrode 7 and the photoelectric conversion layer 5. The wavelength at which the reflectance of the reflection layer 6 is maximum in the visible region is within the range of wavelengths in which the optical absorption coefficient of the photoelectric conversion layer 5 is or more of the maximum optical absorption coefficient in the visible region.

A composition for a photoelectric device includes a compound represented by Chemical Formula 1, and an image sensor and an electronic device including the same: ##STR00001## In Chemical Formula 1, each substituent is the same as defined in the detailed description.

A composition for a photoelectric device includes a compound represented by Chemical Formula 1, and an image sensor and an electronic device including the same: ##STR00001## In Chemical Formula 1, each substituent is the same as defined in the detailed description.

A photoelectric conversion module is a photoelectric conversion module including a translucent substrate and one or more photoelectric conversion elements formed on the translucent substrate, wherein each of the photoelectric conversion elements is formed by stacking a transparent conductive film, a first charge transport layer, a power generation layer, and a second charge transport layer made of a porous film containing a carbon material, in this order from the side of the translucent substrate, and a portion of the second charge transport layer of at least one of the photoelectric conversion elements, the portion facing another transparent conductive film adjacent to the transparent conductive film of the photoelectric conversion element is electrically connected to the other transparent conductive film via a conductive layer that is thicker than a thickness of adding up the first charge transport layer and the power generation layer.

A photoelectric conversion module is a photoelectric conversion module including a translucent substrate and one or more photoelectric conversion elements formed on the translucent substrate, wherein each of the photoelectric conversion elements is formed by stacking a transparent conductive film, a first charge transport layer, a power generation layer, and a second charge transport layer made of a porous film containing a carbon material, in this order from the side of the translucent substrate, and a portion of the second charge transport layer of at least one of the photoelectric conversion elements, the portion facing another transparent conductive film adjacent to the transparent conductive film of the photoelectric conversion element is electrically connected to the other transparent conductive film via a conductive layer that is thicker than a thickness of adding up the first charge transport layer and the power generation layer.