A pressure transducer and a fabrication method thereof are provided. The pressure transducer includes a light-emitting element, an interference light-filtering structure and a light-sensing element stacked on top of each other. The light-emitting element is configured to emit incident light onto the interference light-filtering structure. The interference light-filtering structure is configured to change its thickness in accordance with the pressure exerted on the pressure transducer and generate emergent light corresponding to the pressure. The light-sensing element is configured to detect the emergent light and generate an electrical signal corresponding to the emergent light.

An organic photodiode includes a first electrode including a reflective layer, a second electrode including a semi-transmissive layer, a photoelectric conversion layer between the first electrode and the second electrode and including an organic light absorbing material, and a buffer layer that is at least one of between the reflective layer and the photoelectric conversion layer or between the semi-transmissive layer and the photoelectric conversion layer. The organic photodiode is configured to exhibit at least three external quantum efficiency (EQE) spectra in a wavelength region of about 380 nm to about 3000 nm and each EQE spectrum of the at least three EQE spectra has a full width at half maximum of about 2 nm to about 100 nm.

A tandem photovoltaic device includes a silicon photovoltaic cell having a silicon layer, a perovskite photovoltaic cell having a perovskite layer, and an intermediate layer between a rear side of the perovskite photovoltaic cell and a front (sunward) side of the silicon photovoltaic cell. The front side of the silicon layer has a textured surface, with a peak-to-valley height of structures in the textured surface of less than 1 μm or less than 2 μm. The textured surface is planarized by the intermediate layer or a layer of the perovskite photovoltaic cell. Forming the tandem photovoltaic device includes texturing a silicon containing layer of a silicon photovoltaic cell and operatively coupling a perovskite photovoltaic cell comprising a perovskite layer to the silicon photovoltaic cell, thereby forming a tandem photovoltaic device and planarizing the textured surface of the silicon containing layer of the silicon photovoltaic cell.

An organic photovoltaic device comprises a first electrode, at least one organic heterojunction layer positioned over the first electrode, a second electrode positioned over the organic heterojunction layer, and a thin film stack positioned over the second electrode, comprising a plurality of sublayers of a first dielectric material alternating with a plurality of sublayers of a second dielectric material, wherein at least one of the plurality of sublayers of the first dielectric material has a thickness that is different from another of the plurality of sublayers of the first dielectric material, wherein the organic photovoltaic device has a mean transmittance of between 10% and 100% for light between 420 nm and 670 nm, with a variance of ±10%, and wherein an index contrast between the sublayers in the thin film stack is at least 0.1. A method of fabricating an organic photovoltaic device is also disclosed.

An optical fiber includes an optical fiber core for high-power laser transmission, an optical cladding disposed radially around the optical fiber core, and at least one harvesting cell disposed axially along the optical fiber core, the harvesting cell including an anode surrounding the optical cladding, a photovoltaic layer having a polymer-based photovoltaic material disposed radially around and electrically connected to the anode, and a cathode disposed radially around the photovoltaic layer and electrically connected to the photovoltaic layer.

Self-organizing patterns with micrometer-scale feature sizes are promising for the large area fabrication of photonic devices and scattering layers in optoelectronics. Pattern formation would ideally occur in the active semiconductor to avoid the need for further processing steps. The present disclosure includes approaches to form period patterns in single layers of organic semiconductors by an annealing process. When heated, a crystallization front propagates across the film, producing a sinusoidal surface structure with wavelengths comparable to that of near-infrared light. These surface features form initially in the amorphous region within a micron of the crystal growth front, likely due to competition between crystal growth and surface mass transport. The pattern wavelength can be tuned by varying film thickness and annealing temperature, millimeter scale domain sizes are obtained. Aspects of the disclosure can be exploited for self-assembly of microstructured organic optoelectronic devices, for example.

The present disclosure provides a photoelectric conversion element including a first electrode 3, a second electrode 7, a photoelectric conversion layer 5 between the first electrode 3 and the second electrode 7, and a reflection layer 6 between one of the first electrode 3 and the second electrode 7 and the photoelectric conversion layer 5. The wavelength at which the reflectance of the reflection layer 6 is maximum in the visible region is within the range of wavelengths in which the optical absorption coefficient of the photoelectric conversion layer 5 is ⅕ or more of the maximum optical absorption coefficient in the visible region.

The present disclosure relates to a composition that includes a first layer having a first molecule that includes a metal and a halogen, a second layer that includes the first molecule, and a third layer that includes a chiral molecule, where the third layer is positioned between the first layer and the second layer, and the first layer, the second layer, and the third layer form a crystalline structure.

A photoelectric conversion element includes a first electrode including a plurality of electrodes independent from each other, a second electrode disposed to be opposed to the first electrode, an n-type photoelectric conversion layer including a semiconductor nanoparticle, and a semiconductor layer including an oxide semiconductor material. The semiconductor layer is provided between the first electrode and the n-type photoelectric conversion layer. The n-type photoelectric conversion layer is provided between the first electrode and the second electrode. A carrier density of the n-type photoelectric conversion layer is higher than a carrier density of the semiconductor layer.

A photoelectric conversion element includes a first electrode including a plurality of electrodes independent from each other, a second electrode disposed to be opposed to the first electrode, an n-type photoelectric conversion layer including a semiconductor nanoparticle, and a semiconductor layer including an oxide semiconductor material. The semiconductor layer is provided between the first electrode and the n-type photoelectric conversion layer. The n-type photoelectric conversion layer is provided between the first electrode and the second electrode. A carrier density of the n-type photoelectric conversion layer is higher than a carrier density of the semiconductor layer.