There is provided a solid-state imaging device that includes a substrate having a pixel array unit sectioned into a matrix, a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the phase difference detection pixels, each provided in each of the plurality of sections, in which each of the normal pixel, the phase difference detection pixel, and the adjacent pixel has a photoelectric conversion film, and an upper electrode and a lower electrode that sandwich the photoelectric conversion film in a thickness direction of the photoelectric conversion film, and the lower electrode, in the adjacent pixel, extends from the section in which the adjacent pixel is provided to cover the section in which the phase difference detection pixel adjacent to the adjacent pixel is provided, when viewed from above the substrate.

A solid-state imaging element according to the present disclosure includes a photoelectric conversion layer, a first insulating layer (101), and a second insulating layer (102). The photoelectric conversion layer (photoelectric conversion film PD) includes an insulating film (GFa), a charge storage layer (203), and a photoelectric conversion film (PD) stacked between a first electrode (201) and a second electrode (202). The first insulating layer (101) is provided with gates of some pixel transistors in which the charge storage layer serves as a source, a drain, and a channel in a plurality of pixel transistors that processes signal charges photoelectrically converted by the photoelectric conversion film (PD). The second insulating layer (102) is provided with a pixel transistor other than the some pixel transistors in the plurality of pixel transistors.

An imaging device includes: a photoelectric converter whose sensitivity changes depending on a value of a voltage to be applied; and a voltage supply circuit that alternately supplies a first voltage and a second voltage, which is different from the first voltage, to the photoelectric converter, in which in a first frame period, a length of a first period from a first point in time at which the first voltage is switched to the second voltage until a second point in time at which the first voltage is switched to the second voltage subsequently to the first point in time differs from a length of a second period from the second point in time until a third point in time at which the first voltage is switched to the second voltage subsequently to the second point in time.

The present invention provides a photoelectric conversion element having excellent heat resistance. In addition, the present invention provides an optical sensor and an imaging element including the photoelectric conversion element. In addition, the present invention provides a compound applied to the photoelectric conversion element. The photoelectric conversion element according to the embodiment of the present invention including a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1) or (2). ##STR00001##

There is disclosed a semiconductor device including: a substrate; a plurality of first electrodes arranged away from each other with gaps on the substrate; a first intermediate layer arranged on each of the plurality of first electrode; a second intermediate layer, at least a part of which is arranged on each of the gaps of the plurality of first electrodes; a photoelectric conversion layer arranged on the first intermediate layer and the second intermediate layer; and a second electrode arranged on the photoelectric conversion layer. A content of oxygen on a molar basis in the second intermediate layer is higher than a content of oxygen on a molar basis in the first intermediate layer.

There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula and a subphthalocyanine derivative represented by the following General formula.

There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula and a subphthalocyanine derivative represented by the following General formula.

An image sensor includes a first substrate having a first surface and a second surface opposite to the first surface. The first substrate includes an active pixel region having a plurality of active pixels. A plurality of lower electrode structures is disposed on the second surface of the first substrate and corresponds to the plurality of active pixels. An upper electrode is disposed on the plurality of lower electrode structures. An organic photoelectric conversion layer is disposed between the plurality of lower electrode structures and the upper electrode. A second substrate is disposed on the first surface of the first substrate. A driving circuit configured to drive the plurality of active pixels is disposed on the second substrate. The plurality of lower electrode structures includes a first barrier layer, a reflective layer disposed on the first barrier layer and a second barrier layer disposed on the reflective layer.

In one example, an apparatus comprises: a first sensor layer, including an array of pixel cells configured to generate pixel data; and one or more semiconductor layers located beneath the first sensor layer with the one or more semiconductor layers being electrically connected to the first sensor layer via interconnects. The one or more semiconductor layers comprises on-chip compute circuits configured to receive the pixel data via the interconnects and process the pixel data, the on-chip compute circuits comprising: a machine learning (ML) model accelerator configured to implement a convolutional neural network (CNN) model to process the pixel data; a first memory to store coefficients of the CNN model and instruction codes; a second memory to store the pixel data of a frame; and a controller configured to execute the codes to control operations of the ML model accelerator, the first memory, and the second memory.

A first photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode that is disposed to be opposed to the first electrode; and a photoelectric conversion layer that is provided between the first electrode and the second electrode. The photoelectric conversion layer includes a fullerene C.sub.60 or a fullerene C.sub.70 as a first organic semiconductor material and a second organic semiconductor material having an ionization potential of 0 or more and 5.0 eV or less.