An active pixel sensor includes thin-film transistors (TFTs) fabricated on a glass substrate, the TFTs include a gate electrode patterned on the glass substrate; a gate insulator layer disposed over the gate electrode; an amorphous indium-tin-zinc-oxide (a-ITZO) active semi-conductor layer disposed on the gate insulator layer and patterned over the gate electrode; and a source electrode and a drain electrode patterned from a metal layer deposited over the a-ITZO layer.

Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

The present disclosure relates to coated particles. The teachings thereof may be embodied in coated particles, a method for their production, and the use of the coated particles in X-ray detectors, gamma detectors, UV detectors, or solar cells. For example, some embodiments include particles comprising: perovskite crystals of the type ABX.sub.3 or AB.sub.2X.sub.4; wherein A comprises at least one monovalent, divalent, or trivalent element from the fourth or a higher period in the periodic table or mixtures thereof; B comprises a monovalent cation, the volumetric parameter of which is sufficient, with the respective element A, for perovskite lattice formation; and X is selected from the group consisting of halides and pseudohalides, and mixtures thereof; and a coating of at least one semiconductor material surrounding a nucleus comprising the perovskite crystals.

An organic semiconductor detector for detecting radiation has an organic conducting active region, an output electrode and a field effect semiconductor device. The field effect semiconductor device has a biasing voltage electrode and a gate electrode. The organic conducting active region is connected on one side to the field effect semiconductor device and is connected on another side to the output electrode.

The invention relates to a ceramic material (14) for generating light when irradiated with radiation, wherein the ceramic material comprises a stack of layers (15, 16) having different compositions and/or different dopings. The ceramic material may be used in a spectral computed tomography (CT) detector, in order to spectrally detect x-rays, or it may be used as a ceramic gain medium of a laser such that temperature gradients and corresponding thermo-mechanical stresses within the gain medium can be reduced.

According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, an organic semiconductor layer, and a first region. The first conductive layer includes a first metal. The organic semiconductor layer is provided between the first conductive layer and the second conductive layer. The first region includes the first metal and oxygen and is positioned between the organic semiconductor layer and the first conductive layer.

A sensor including a layer of amorphous selenium (a-Se) and at least one charge blocking layer is formed by depositing the charge blocking layer over a substrate prior to depositing the amorphous selenium, enabling the charge blocking layer to be formed at elevated temperatures. Such a process is not limited by the crystallization temperature of a-Se, resulting in the formation of an efficient charge blocking layer, which enables improved signal amplification of the resulting device. The sensor can be fabricated by forming first and second amorphous selenium layers over separate substrates, and then fusing the a-Se layers at a relatively low temperature.

A sensor including a layer of amorphous selenium (a-Se) and at least one charge blocking layer is formed by depositing the charge blocking layer over a substrate prior to depositing the amorphous selenium, enabling the charge blocking layer to be formed at elevated temperatures. Such a process is not limited by the crystallization temperature of a-Se, resulting in the formation of an efficient charge blocking layer, which enables improved signal amplification of the resulting device. The sensor can be fabricated by forming first and second amorphous selenium layers over separate substrates, and then fusing the a-Se layers at a relatively low temperature.

Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

According to an embodiment, a photodetector includes a first photoelectric conversion element, a second photoelectric conversion element, and an absorption layer. The first photoelectric conversion element includes a first photoelectric conversion layer for converting energy of radiation into electric charges. The second photoelectric conversion element includes a second photoelectric conversion layer for converting energy of radiation into electric charges. The absorption layer is arranged between the first photoelectric conversion element and the second photoelectric conversion element to absorb radiation having energy equal to or lower than a threshold value.