According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and an intermediate layer. The intermediate layer is provided between the first and second conductive layers. The intermediate layer includes an organic semiconductor region and a plurality of particles. The organic semiconductor region includes a portion provided around the particles. The organic semiconductor region includes first and second semiconductor regions. The first semiconductor region has a first highest occupied molecular orbital and a first lowest unoccupied molecular orbital. The second semiconductor region has a second highest occupied molecular orbital and a second lowest unoccupied molecular orbital. The particles have a third highest occupied molecular orbital and a third lowest unoccupied molecular orbital. The first highest occupied molecular orbital is lower than the third highest occupied molecular orbital. The second lowest unoccupied molecular orbital is higher than the third lowest unoccupied molecular orbital.

A matrix-array optoelectronic device includes a substrate on which a matrix array of what are called bottom electrodes is deposited; an active structure, which is preferably continuous and organic, arranged above the matrix-array of bottom electrodes, the structure being suitable for detecting light; and at least one what is called top electrode lying above the active structure, the top electrode being transparent to the light emitted or detected by the active structure; and at least one conductive element that is borne by the substrate without interposition of the active structure and that is connected to the top electrode by at least one vertical interconnection, the conductive element having an electrical conductivity greater than that of the top electrode. The device may also comprise a layer made of scintillator material, the layer being fastened to the top electrode, so as to form an x-ray imager.

Imaging panels and imaging systems that may employ use organic photodiodes or other continuous sensors are discussed. The detector panels discussed may have a non-pixelated organic photodiode disposed above a pixelated backplane. In some embodiments, the sensor panels may also include dielectric structures that create buried vias in the region of contact between the organic photodiode and the thin film transistor (TFT) backplane. In some embodiments, the sensor panels may include dielectric structures that separate neighboring pixels. The dielectric structures may decrease thickness inhomogeneity in active areas of the organic photodiode. Detector panels discussed herein may have decreased sensing lag and current leakage, and improved reliability. Methods for formation of organic photodiodes and of dielectric structures are also discussed.

An optoelectronic device includes a stack of layers that are arranged on an electrically insulating substrate, including at least one cathode made of a material of work function ?.sub.1; one electron-collecting layer that is arranged above the cathode and that is made of a material of work function ?.sub.2 and of sheet resistance R; and one active layer comprising at least one p-type organic semiconductor the energy level of which is HO1, wherein the work function ?.sub.2 of the electron-collecting layer and the energy level HO1 of the active layer form a potential barrier able to block the injection of holes from the cathode into the active layer; and the sheet resistance R of the electron-collecting layer is higher than or equal to 10.sup.8?.

A method is provided for producing an electro-optical and/or optoelectronic layer. In the method, the layer is formed with perovskite material of the composition ABX.sub.3 by cold gas spraying at least a starting material having the perovskite material. X is also formed with at least one halogen or a mixture of multiple halogens. In the method for producing an electro-optical or optoelectronic device with at least one electro-optical or optoelectronic layer, the at least one electro-optical or optoelectronic layer is formed with a perovskite material by the method. The device is, in particular, an electro-optical or optoelectronic device, such as an energy converter, a solar cell, a light diode, or an X-ray detector. The device has an electro-optical layer of this type.

The present disclosure relates to coated particles. The teachings thereof may be embodied in coated particles, a method for their production, and the use of the coated particles in X-ray detectors, gamma detectors, UV detectors, or solar cells. For example, some embodiments include particles comprising: perovskite crystals of the type ABX.sub.3 or AB.sub.2X.sub.4; wherein A comprises at least one monovalent, divalent, or trivalent element from the fourth or a higher period in the periodic table or mixtures thereof; B comprises a monovalent cation, the volumetric parameter of which is sufficient, with the respective element A, for perovskite lattice formation; and X is selected from the group consisting of halides and pseudohalides, and mixtures thereof; and a coating of at least one semiconductor material surrounding a nucleus comprising the perovskite crystals.

The invention relates to a method for producing a radiation detector used to detect ionizing radiation including a first inorganic-organic halide Perovskite material (24) as a direct converter material and/or as a scintillator material in a detector layer and to a radiation detector comprising a detector layer (24) produced by means of the steps of the method. In order to provide an approach for producing a thick layer (e.g. above 10 ?.Math.?) of Perovskite material suitable for a radiation detector, it is proposed to grow the material selectively on a seeding layer (23), yielding in a thick polycrystalline layer. One suitable seeding layer (23) to grow lead Perovskite material is made of a bromide Perovskite material.

According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and an intermediate layer. The intermediate layer is provided between the first and second conductive layers. The intermediate layer includes an organic semiconductor region and a plurality of particles. The organic semiconductor region includes a portion provided around the particles. The organic semiconductor region includes first and second semiconductor regions. The first semiconductor region has a first highest occupied molecular orbital and a first lowest unoccupied molecular orbital. The second semiconductor region has a second highest occupied molecular orbital and a second lowest unoccupied molecular orbital. The particles have a third highest occupied molecular orbital and a third lowest unoccupied molecular orbital. The first highest occupied molecular orbital is lower than the third highest occupied molecular orbital. The second lowest unoccupied molecular orbital is higher than the third lowest unoccupied molecular orbital.

The present invention relates to a radiation detection device and a method for manufacturing same. The radiation detection device of the present invention comprises: at least one bottom electrode and at least one top electrode disposed spaced apart from each other; and a semiconductor substrate disposed between the bottom electrode and the top electrode, wherein the upper end of the semiconductor substrate includes at least one active layer region, and the active layer region is filled with a nanocomposite including zero-dimensional nanoparticles, conductive polymers, and one-dimensional or two-dimensional conductive nanomaterials.

The present invention relates to a radiation detection device and a method for manufacturing same. The radiation detection device of the present invention comprises: at least one bottom electrode and at least one top electrode disposed spaced apart from each other; and a semiconductor substrate disposed between the bottom electrode and the top electrode, wherein the upper end of the semiconductor substrate includes at least one active layer region, and the active layer region is filled with a nanocomposite including zero-dimensional nanoparticles, conductive polymers, and one-dimensional or two-dimensional conductive nanomaterials.