According to one embodiment, a radiation detector includes a detection element. The detection element includes a first conductive layer, a second conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first compound and a second compound. The first compound is bipolar. A thickness of the organic semiconductor layer is 50 m or more.

The invention relates to a ceramic material (14) for generating light when irradiated with radiation, wherein the ceramic material comprises a stack of layers (15, 16) having different compositions and/or different dopings. The ceramic material may be used in a spectral computed tomography (CT) detector, in order to spectrally detect x-rays, or it may be used as a ceramic gain medium of a laser such that temperature gradients and corresponding thermo-mechanical stresses within the gain medium can be reduced.

A sensor including a layer of amorphous selenium (a-Se) and at least one charge blocking layer is formed by depositing the charge blocking layer over a substrate prior to depositing the amorphous selenium, enabling the charge blocking layer to be formed at elevated temperatures. Such a process is not limited by the crystallization temperature of a-Se, resulting in the formation of an efficient charge blocking layer, which enables improved signal amplification of the resulting device. The sensor can be fabricated by forming first and second amorphous selenium layers over separate substrates, and then fusing the a-Se layers at a relatively low temperature.

Composite materials that include a polymer matrix and a metal halide perovskite. The metal halide perovskite may be a lead-free metal halide double perovskite. Devices that include a layer of a composite material, a first electrode, and a second electrode. Methods of forming composite materials and devices, including methods that include printing one or more layers with a 3D printer.

A detection device according to an embodiment of the present disclosure includes a plurality of semiconductor layers, each including a plurality of electrode regions and a semiconductor region. The plurality of electrode regions are: arranged at intervals in a cross direction crossing a thickness direction; configured to generate electric charges by a photoelectric effect of irradiation of radiation; and configured to produce an electric field in the cross direction by voltage application. The semiconductor region is provided at least between the electrode regions adjacent to one another in the cross direction. The plurality of semiconductor layers are stacked in the thickness direction.

An imaging panel generates an image based on scintillation light that is obtained from X-rays transmitted through an object. The imaging panel includes, in a terminal area, a terminal-first insulating film that is made of the same material as that of a first insulating film on a TFT, and is separated on a part of a first conductive layer so as to have an opening; a terminal-semiconductor layer is provided above the terminal-first insulating film, and is made of the same material as that of at least a part of semiconductor layers of a photoelectric conversion layer; and a second conductive layer made of the same material as that of a conductive film connected with a photoelectric conversion element, is provided on the terminal-semiconductor layer so as to be in contact with the first conductive layer in the opening.

A sensor including a layer of amorphous selenium (a-Se) and at least one charge blocking layer is formed by depositing the charge blocking layer over a substrate prior to depositing the amorphous selenium, enabling the charge blocking layer to be formed at elevated temperatures. Such a process is not limited by the crystallization temperature of a-Se, resulting in the formation of an efficient charge blocking layer, which enables improved signal amplification of the resulting device. The sensor can fabricated by forming first and second amorphous selenium layers over separate substrates, and then fusing the a-Se layers at a relatively low temperature.

Present invention concerns optical processing of materials comprising complex phase behaviour, such as perovskites for stabilizing the optically active phase of thin films of materials with complex phase behaviour, such as perovskites.

A radiation detector includes a substrate including a charge collection electrode, a radiation absorption layer disposed on one side with respect to the substrate and including perovskite structure particles and a binder resin; and a voltage application electrode disposed on the one side with respect to the radiation absorption layer, a bias voltage being applied to the voltage application electrode so that a potential difference is generated between the voltage application electrode and the charge collection electrode.

A matrix-array detecting device including a stack comprising a matrix array of detecting-element pixels, and an active matrix array comprising a network of rows and columns for controlling the pixels and produced on the surface of a substrate, wherein the detecting-element pixels comprise: a common top electrode; a detecting layer; and discrete bottom electrodes; the device comprising a metallic mesh that is connected to the top electrode; that includes pads comprising at least one metal portion, the pads being incorporated into the detecting layer; and that is positioned in correspondence with the network of controlling rows and columns. A process for fabricating the matrix-array detecting device is also provided.