A conductor structure includes a first metal layer, a second metal layer, and a controlling layer. The second metal layer is disposed on the first metal layer. A material of the first metal layer and a material of the second metal layer include at least one identical metal element. The controlling layer is disposed between the first metal layer and the second metal layer. A thickness of the controlling layer is less than a thickness of the first metal layer, and the thickness of the controlling layer is less than a thickness of the second metal layer.

A sensor including a layer of amorphous selenium (a-Se) and at least one charge blocking layer is formed by depositing the charge blocking layer over a substrate prior to depositing the amorphous selenium, enabling the charge blocking layer to be formed at elevated temperatures. Such a process is not limited by the crystallization temperature of a-Se, resulting in the formation of an efficient charge blocking layer, which enables improved signal amplification of the resulting device. The sensor can be fabricated by forming first and second amorphous selenium layers over separate substrates, and then fusing the a-Se layers at a relatively low temperature.

A radiation detector includes a first scintillator, a second scintillator, a first photoelectric conversion layer, and a second photoelectric conversion layer. The first scintillator converts rays into first scintillation light. The second scintillator converts the rays into second scintillation light. The first photoelectric conversion layer is provided between the first scintillator and the second scintillator and converts the first scintillation light into electric charges. The second photoelectric conversion layer is provided between the first photoelectric conversion layer and the second scintillator and converts the second scintillation light into electric charges. The first scintillator, the second scintillator, the first photoelectric conversion layer, and the second photoelectric conversion layer are each formed with an organic material as a main component. The thickness of the second scintillator is larger than the thickness of the first scintillator.

A radiation detector includes a substrate including a charge collection electrode, a radiation absorption layer disposed on one side with respect to the substrate and including perovskite structure particles and a binder resin; and a voltage application electrode disposed on the one side with respect to the radiation absorption layer, a bias voltage being applied to the voltage application electrode so that a potential difference is generated between the voltage application electrode and the charge collection electrode.

Disclosed is a device for detecting non-intrusive inspections. The device includes an electrical component with a first end cap and a second end cap. Additionally, the device includes an x-ray sensitive material electrically coupling the first end cap and the second end cap. The x-ray sensitive material has a first state having a first conductivity and a second state having a second conductivity. The sensing material is configured to transform from the first state to the second state when exposed to an initiating voltage.

A sensor including a layer of amorphous selenium (a-Se) and at least one charge blocking layer is formed by depositing the charge blocking layer over a substrate prior to depositing the amorphous selenium, enabling the charge blocking layer to be formed at elevated temperatures. Such a process is not limited by the crystallization temperature of a-Se, resulting in the formation of an efficient charge blocking layer, which enables improved signal amplification of the resulting device. The sensor can be fabricated by forming first and second amorphous selenium layers over separate substrates, and then fusing the a-Se layers at a relatively low temperature.

An organic semiconductor detector for detecting radiation has an organic conducting active region, an output electrode and a field effect semiconductor device. The field effect semiconductor device has a biasing voltage electrode and a gate electrode. The organic conducting active region is connected on one side to the field effect semiconductor device and is connected on another side to the output electrode.

An X-ray detector, particularly a pixelated flat panel X-Ray detector using semiconducting perovskites as direct converting layer, has a top electrode, a photoactive layer containing at least one perovskite, and a bottom electrode, wherein the X-ray detector additionally has an electron blocking interlayer and/or a hole blocking interlayer containing an adhesion promoting additive, which can be one or more of saccharides and derivatives thereof, amino resins, epoxy resins, natural resins, and acrylic based adhesives.

An electromagnetic radiation detection device comprises a matrix having a plurality of N rows divided into a plurality of M columns of cells, each cell comprising a plurality of diode segments responsive to electromagnetic radiation incident on said device. A scan driver provides a plurality of N scan line signals to respective rows of said matrix, each for enabling charge values from cells of a selected row of said matrix to be read. A reader reads a plurality of M variable charge value signals from respective columns of said matrix, each corresponding to a cell within a selected row of said matrix. Each diode segment is connected to a drive voltage sufficient to operate each diode segment in avalanche multiplication Geiger mode; and connected in series with an avalanche quenching resistor to said reader.

Methods and devices that use alkali metal chalcohalides having the chemical formula A.sub.2TeX.sub.6, wherein A is Cs or Rb and X is I or Br, to convert hard radiation, such as X-rays, gamma-rays, and/or alpha-particles, into an electric signal are provided. The devices include optoelectronic and photonic devices, such as photodetectors and photodiodes. The method includes exposing the alkali metal chalcohalide material to incident radiation, wherein the material absorbs the incident radiation and electron-hole pairs are generated in the material. A detector is configured to measure a signal generated by the electron-hole pairs that are formed when the material is exposed to incident radiation.