An X-ray detector assembly includes a polymeric substrate having a lower surface and an upper surface, and an X-ray detector disposed on the upper surface of the polymeric substrate. The X-ray detector includes a thin-film-transistor array disposed on the substrate, an organic photodiode disposed on the thin-film-transistor array, and a scintillator disposed on the organic photodiode. A metal barrier extends substantially over the lower surface of the polymeric substrate.

An apparatus for electro-magnetic wave detection is disclosed. The apparatus comprises a two-dimensional perovskite having a polaronic emission Stokes' shifted by at least 50 nm to minimise loss due to re-absorption.

The present invention is in the field of an improved scintillator for X-rays, use of the inventive scintillator, an X-ray detector comprising the present scintillator, and a method of producing an improved scintillator. A scintillator converts X-rays into visible light; high performance scintillators are typically made of a crystalline material.

A semiconductor device includes a first semiconductor layer of a first conductivity type having a first surface on one side thereof and a second surface on an opposite side thereof, and having an element therein, a second semiconductor layer of a second conductivity type having a circuit element formed therein, the second semiconductor layer being formed at the one side of the first surface of the first semiconductor layer, an insulating layer disposed on the first surface of the first semiconductor layer, and a charge-attracting layer configured to attract electrical charges generated in the insulating layer when a predetermined voltage is supplied to the charge-attracting layer.

An organic semiconductor detector for detecting radiation has an organic conducting active region, an output electrode and a field effect semiconductor device. The field effect semiconductor device has a biasing voltage electrode and a gate electrode. The organic conducting active region is connected on one side to the field effect semiconductor device and is connected on another side to the output electrode.

Provided is an X-ray imaging panel that allows the productivity to be improved and a method for producing the same. An imaging panel 1 generates an image based on scintillation light that is obtained from X-rays transmitted through an object. The imaging panel 1 has an active area and a terminal area on the substrate 101. In the active area, the imaging panel 1 includes a thin film transistor; a first insulating film provided on the thin film transistor; a photoelectric conversion element provided on the first insulating film; a second insulating film separated in a layer above the photoelectric conversion element so as to have a contact hole; and a conductive film that is connected with the photoelectric conversion element through the contact hole. The photoelectric conversion element includes a photoelectric conversion layer that includes a first semiconductor layer, an intrinsic amorphous semiconductor layer, and a second semiconductor layer. In the terminal area, the imaging panel 1 includes a first conductive layer 100 made of the same material as that of a gate electrode or a source electrode of the thin film transistor; a terminal-first insulating film 103 that is made of the same material as that of the first insulating film, and is separated on a part of the first conductive layer 110 so as to have an opening; a terminal-semiconductor layer 1501 that is provided above the terminal-first insulating film 103, and is made of the same material as that of at least a part of the semiconductor layers of the photoelectric conversion layer; and a second conductive layer 1702 that is provided on the terminal-semiconductor layer 1501, is made of the same material as that of the conductive film, and is in contact with the first conductive layer 100 in the opening of the terminal-first insulating film 103.

A method for evaluating a single-photon detector signal includes duplicating the single-photon detector signal into a first and a second signal. The first signal is processed and the second signal is either not processed or is processed in a manner different from the first signal. A differential signal is formed between the unprocessed or differently processed second signal and the processed first signal. The differential signal is evaluated to determine pulse events.

According to one embodiment, a radiation detector includes a detection element. The detection element includes a first conductive layer, a second conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first compound and a second compound. The first compound is bipolar. A thickness of the organic semiconductor layer is 50 m or more.

According to one embodiment, a radiation detector includes a first member, a first electrode, a second electrode, and an organic photoelectric conversion layer. The first member converts radiation into light and has a first surface. The first surface includes a first portion and a second portion. The first electrode is provided at the first portion. The second electrode is provided at the second portion. A first intermediate region of the organic photoelectric conversion layer is provided between the first electrode and the second electrode.

An optoelectronic device includes a stack of layers that are arranged on an electrically insulating substrate, including at least one cathode made of a material of work function .sub.1; one electron-collecting layer that is arranged above the cathode and that is made of a material of work function .sub.2 and of sheet resistance R; and one active layer comprising at least one p-type organic semiconductor the energy level of which is HO1, wherein the work function .sub.2 of the electron-collecting layer and the energy level HO1 of the active layer form a potential barrier able to block the injection of holes from the cathode into the active layer; and the sheet resistance R of the electron-collecting layer is higher than or equal to 10.sup.8.