The invention relates to a method for producing a radiation detector used to detect ionizing radiation including a first inorganic-organic halide Perovskite material (24) as a direct converter material and/or as a scintillator material in a detector layer and to a radiation detector comprising a detector layer (24) produced by means of the steps of the method. In order to provide an approach for producing a thick layer (e.g. above 10 .Math.) of Perovskite material suitable for a radiation detector, it is proposed to grow the material selectively on a seeding layer (23), yielding in a thick polycrystalline layer. One suitable seeding layer (23) to grow lead Perovskite material is made of a bromide Perovskite material.

A sensor including a layer of amorphous selenium (a-Se) and at least one charge blocking layer is formed by depositing the charge blocking layer over a substrate prior to depositing the amorphous selenium, enabling the charge blocking layer to be formed at elevated temperatures. Such a process is not limited by the crystallization temperature of a-Se, resulting in the formation of an efficient charge blocking layer, which enables improved signal amplification of the resulting device. The sensor can be fabricated by forming first and second amorphous selenium layers over separate substrates, and then fusing the a-Se layers at a relatively low temperature.

According to one embodiment, a radiation detector includes a base body, a first radiation detection element, and a second radiation detection element. The base body includes a first surface. The first surface includes first and second partial regions. A first direction from the first partial region toward the second partial region is along the first surface. The first radiation detection element is fixable to the first partial region. The second radiation detection element includes a first detecting part fixable to the second partial region. The first detecting part includes first and second end portions. A second direction from the first end portion toward the second end portion crosses the first surface. The second end portion is between the first end portion and the second partial region in the second direction. The first radiation detection element does not overlap the first end portion in the first direction.

According to one embodiment, a radiation detector includes a base body, a first radiation detection element, and a second radiation detection element. The base body includes a first surface. The first surface includes first and second partial regions. A first direction from the first partial region toward the second partial region is along the first surface. The first radiation detection element is fixable to the first partial region. The second radiation detection element includes a first detecting part fixable to the second partial region. The first detecting part includes first and second end portions. A second direction from the first end portion toward the second end portion crosses the first surface. The second end portion is between the first end portion and the second partial region in the second direction. The first radiation detection element does not overlap the first end portion in the first direction.

Electronic devices comprising a first layer, said first layer comprising a perovskite material; and a coating layer disposed on a surface of said first layer; wherein said coating layer comprises a coating oxysalt. Also provided herein are perovskite materials comprising: a coating layer on at least a portion of a surface of said perovskite material; wherein said coating layer comprises a coating oxysalt. Further provided herein are methods for forming a coating layer on a surface of a perovskite material comprising steps of: exposing said surface to a fluid having a precursor oxysalt dissolved therein such that said coating layer forms on said surface via a chemical reaction between said perovskite material and said precursor oxysalt; wherein said coating layer comprises a coating oxysalt.

A sensor including a layer of amorphous selenium (a-Se) and at least one charge blocking layer is formed by depositing the charge blocking layer over a substrate prior to depositing the amorphous selenium, enabling the charge blocking layer to be formed at elevated temperatures. Such a process is not limited by the crystallization temperature of a-Se, resulting in the formation of an efficient charge blocking layer, which enables improved signal amplification of the resulting device. The sensor can be fabricated by forming first and second amorphous selenium layers over separate substrates, and then fusing the a-Se layers at a relatively low temperature.

According to one embodiment, a radiation detector includes a detecting part, and a transmitting part. The detecting part is configured to output a signal. The signal corresponds to radiation incident on the detecting part. The transmitting part includes a first conductive layer, a second conductive layer, and an organic layer. The first conductive layer is electrically connected with the detecting part, and is configured to transmit the signal. The second conductive layer is separated from the first conductive layer. At least a portion of the organic layer is between the first conductive layer and the second conductive layer.

According to one embodiment, a radiation detector includes a detecting part, and a transmitting part. The detecting part is configured to output a signal. The signal corresponds to radiation incident on the detecting part. The transmitting part includes a first conductive layer, a second conductive layer, and an organic layer. The first conductive layer is electrically connected with the detecting part, and is configured to transmit the signal. The second conductive layer is separated from the first conductive layer. At least a portion of the organic layer is between the first conductive layer and the second conductive layer.

An image sensor array formed on a flexible first substrate is supported by a flexible second substrate attached thereto. The second substrate has a top surface with an adhesive thereon for attaching the substrates together. The adhesive is on a portion of the second substrate directly beneath the image sensor array to allow selective formation of the second substrate.

According to one embodiment, a radiation detector includes first, and second conductive layers, and an organic layer. The organic layer is provided between the first and second conductive layers. A first thickness of the organic layer along a first direction from the second conductive layer toward the first conductive layer is 1 m or more. The organic layer includes a first compound of a first conductivity type, and a second compound of a second conductivity type. A first value of (0.9.Math.)/(w1.Math.cos 1) for a first peak of X-ray analysis of the organic layer is not less than 13 nm and not more than 19 nm. The first value is obtained from a first Bragg angle 1 (radians), a first full width at half maximum w1 (radians) of the 21 peak, and an X-ray wavelength (nm). The 21 is not less than 0.0750 radians and not more than 0.1100 radians.