The invention provides a technique inhibiting entry of moisture to an active matrix substrate included in an X-ray imaging device.

An active matrix substrate includes, in each of the pixels, a photoelectric conversion element including a pair of electrodes and a semiconductor layer provided between the pair of electrodes, a first flattening film configured as an organic resin film and covering the photoelectric conversion element, and a first inorganic insulating film covering the first flattening film. The first flattening film and the first inorganic insulating film are provided to extend outside the pixel region. Outside the pixel region, the first flattening film is covered with the first inorganic insulating film to prevent exposure of the first flattening film.

This invention relates to an X-ray sensor having flexible properties and to a method of manufacturing the same. This X-ray sensor includes an array substrate including a semiconductor layer having a light-receiving element; a scintillator panel bonded to the array substrate and including a scintillator layer; a first polymer layer attached to an outer surface of the array substrate by a first adhesive layer; a second polymer layer attached to an outer surface of the scintillator panel by a second adhesive layer; and a third adhesive layer disposed between the array substrate and the scintillator panel so as to attach the array substrate and the scintillator panel to each other.

An embodiment relates to a composition including at least two powders. The powders are selected from the group including a powder including a p-doped perovskite; a powder including an n-doped perovskite; and a powder including an undoped perovskite. A method for producing the composition, a method for producing a detector using the composition, and a detector, in particular an X-ray detector, produced thereby are also disclosed.

According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, and an intermediate layer provided between the first conductive layer and the second conductive layer. The intermediate layer includes a first semiconductor region and a second semiconductor region. The first semiconductor region is of an n-type, and the second semiconductor region is of a p-type. The first semiconductor region includes at least one selected from the group consisting of fullerene and a fullerene derivative. The second semiconductor region includes at least one selected from the group consisting of quinacridone and a quinacridone derivative. A ratio of a weight of the second semiconductor region per unit volume to a weight of the first semiconductor region per unit volume in the intermediate layer is greater than 5.

Disclosed is a direct-conversion-type X-ray detector, including a first electrode on a substrate, a semiconductor structure including a photoconductor using a perovskite material on the first electrode, and a second electrode on the semiconductor structure.

Herein is disclosed a quantum cell from top to down including: an N-type ohmic contact electrode, an N-type ?-orbital semiconductor substrate, an N-type ?-orbital semiconductor epitaxy layer, a SiO.sub.2 passivation layer, a graphite contact layer, a Schottky contact electrode, a binding layer, and a radioisotope layer. The N-type ?-orbital semiconductor substrate includes an organic semiconductor material with an aromatic group or a semiconductor material with a carbon-carbon bond. The N-type ?-orbital semiconductor epitaxy layer has a doping concentration of 1?10.sup.13-5?10.sup.14 cm.sup.?3 and is formed by injection of a cationic complex in a dose of 6?10.sup.13-1?10.sup.15 cm.sup.?3.

An electromagnetic radiation detection device comprises a matrix having a plurality of N rows divided into a plurality of M columns of cells, each cell comprising a plurality of diode segments responsive to electromagnetic radiation incident on said device. A scan driver provides a plurality of N scan line signals to respective rows of said matrix, each for enabling charge values from cells of a selected row of said matrix to be read. A reader reads a plurality of M variable charge value signals from respective columns of said matrix, each corresponding to a cell within a selected row of said matrix. Each diode segment is connected to a drive voltage sufficient to operate each diode segment in avalanche multiplication Geiger mode; and connected in series with an avalanche quenching resistor to said reader.

According to one embodiment, a radiation detector includes first, and second conductive layers, and an organic layer. The organic layer is provided between the first and second conductive layers. A first thickness of the organic layer along a first direction from the second conductive layer toward the first conductive layer is 1 ?m or more. The organic layer includes a first compound of a first conductivity type, and a second compound of a second conductivity type. A first value of (0.9.Math.?)/(w1.Math.cos ?1) for a first peak of X-ray analysis of the organic layer is not less than 13 nm and not more than 19 nm. The first value is obtained from a first Bragg angle ?1 (radians), a first full width at half maximum w1 (radians) of the 2?1 peak, and an X-ray wavelength ? (nm). The 2?1 is not less than 0.0750 radians and not more than 0.1100 radians.

A radiation detector (10) which has a multilayer structure that includes: a first electrode (34); a second electrode (49) that is disposed so as to face the first electrode; a selenium layer (48) that is disposed between the first electrode and the second electrode and contains amorphous selenium; a first blocking organic layer (38) that is adjacent to the selenium layer, between the first electrode and the selenium layer, and that contains a hole transport material having an electron affinity of 3.7 eV or less; and a second blocking organic layer (37) that is adjacent to the selenium layer, between the second electrode and the selenium layer, and that contains an electron transport material having an ionization potential of 5.9 eV or more. This radiation detector (10) has low dark current, excellent durability, and less afterimages.

An X-ray detector, particularly a pixelated flat panel X-Ray detector using semiconducting perovskites as direct converting layer, has a top electrode, a photoactive layer containing at least one perovskite, and a bottom electrode, wherein the X-ray detector additionally has an electron blocking interlayer and/or a hole blocking interlayer containing an adhesion promoting additive, which can be one or more of saccharides and derivatives thereof, amino resins, epoxy resins, natural resins, and acrylic based adhesives.