A light detection device includes two adjacent pixels that each include a light receiving element including a lower electrode, an organic light receiving part laminated on the lower electrode, and an upper electrode laminated on the organic light receiving part, and a wall portion that is provided between the two pixels and extends from below an upper surface of the upper electrode included in the light receiving element to above the upper surface of the upper electrode included in the light receiving element.

A light detection device includes two adjacent pixels that each include a light receiving element including a lower electrode, an organic light receiving part laminated on the lower electrode, and an upper electrode laminated on the organic light receiving part, and a wall portion that is provided between the two pixels and extends from below an upper surface of the upper electrode included in the light receiving element to above the upper surface of the upper electrode included in the light receiving element.

A photodetection device includes a lower structure, one or more common line connecting portions and one or more pixel electrodes provided on the lower structure, an organic photoelectric conversion layer that is provided so as to overlap with the one or more pixel electrodes and not to overlap with the one or more common line connecting portions, and a transparent electrode layer that is provided so as to overlap with the organic photoelectric conversion layer and the one or more common line connecting portion, where a part of the transparent electrode layer that overlaps with the one or more pixel electrodes is thicker than other parts.

A photodetection device includes a lower structure, one or more common line connecting portions and one or more pixel electrodes provided on the lower structure, an organic photoelectric conversion layer that is provided so as to overlap with the one or more pixel electrodes and not to overlap with the one or more common line connecting portions, and a transparent electrode layer that is provided so as to overlap with the organic photoelectric conversion layer and the one or more common line connecting portion, where a part of the transparent electrode layer that overlaps with the one or more pixel electrodes is thicker than other parts.

The present disclosure provides a photoelectric device module and a manufacturing method thereof. The photoelectric device module includes a circuit module and a photoelectric conversion module. The circuit module includes a first electrode. The photoelectric conversion module is disposed on the circuit module, in which the photoelectric conversion module includes a second electrode, a photoactive layer, a light-transmitting electrode, and a light-transmitting substrate. The second electrode is electrically connected to the first electrode. The photoactive layer is disposed on the second electrode. The light-transmitting electrode is disposed on the photoactive layer. The light-transmitting substrate is disposed on the light-transmitting electrode.

The present disclosure provides a photoelectric device module and a manufacturing method thereof. The photoelectric device module includes a circuit module and a photoelectric conversion module. The circuit module includes a first electrode. The photoelectric conversion module is disposed on the circuit module, in which the photoelectric conversion module includes a second electrode, a photoactive layer, a light-transmitting electrode, and a light-transmitting substrate. The second electrode is electrically connected to the first electrode. The photoactive layer is disposed on the second electrode. The light-transmitting electrode is disposed on the photoactive layer. The light-transmitting substrate is disposed on the light-transmitting electrode.

A fingerprint sensor comprises a read-out line disposed on a substrate and extending in a first direction, a light receiving element disposed on the read-out line, a first sensor transistor controlling a sensing current based on a voltage of a sensor node that is a first electrode of the light receiving element, a second sensor transistor supplying a reset voltage to the sensor node based on a reset signal, and a third sensor transistor electrically connecting a first electrode of the first sensor transistor with the read-out line based on a gate signal. The fingerprint sensor further includes a power line disposed on a layer between the second sensor transistor and the read-out line and extending in the first direction. The power line overlaps the read-out line.

A fingerprint sensor comprises a read-out line disposed on a substrate and extending in a first direction, a light receiving element disposed on the read-out line, a first sensor transistor controlling a sensing current based on a voltage of a sensor node that is a first electrode of the light receiving element, a second sensor transistor supplying a reset voltage to the sensor node based on a reset signal, and a third sensor transistor electrically connecting a first electrode of the first sensor transistor with the read-out line based on a gate signal. The fingerprint sensor further includes a power line disposed on a layer between the second sensor transistor and the read-out line and extending in the first direction. The power line overlaps the read-out line.

According to an aspect, a detection device includes: a substrate; and a photodiode in which a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode are stacked on the substrate in the order as listed. In plan view, the lower electrode is provided so as to extend from an area overlapping an organic semiconductor layer including the lower buffer layer, the active layer, and the upper buffer layer to an area outside a side surface of the organic semiconductor layer.

According to an aspect, a detection device includes: a substrate; and a photodiode in which a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode are stacked on the substrate in the order as listed. In plan view, the lower electrode is provided so as to extend from an area overlapping an organic semiconductor layer including the lower buffer layer, the active layer, and the upper buffer layer to an area outside a side surface of the organic semiconductor layer.