A display panel includes a driving backplane, a plurality of detection pads, a light emitting function layer, and a flexible circuit board. The driving backplane has a pixel driving region and a peripheral region, and the peripheral region has bonding pads; an edge of the driving backplane is surrounded by a first section and a second section, and the bonding pads are located between the first section and the pixel driving region; a plurality of detection pads are disposed in and distributed along the second section; a light emitting function layer is disposed on the driving backplane and located in the pixel driving region; a flexible circuit board extends between the first section and the pixel driving region, and is bonded to the bonding pads; a first packaging layer is disposed on the light emitting function layer.

Various embodiments provide a process for producing an optoelectronic component. The process includes forming a first electrode and at least one contact section atop a carrier, forming an optically functional layer structure atop the first electrode, forming a second electrode atop the optically functional layer structure, the first electrode or the second electrode being electrically connected to the contact section, applying a protective layer to at least a subregion of the contact section, the protective layer being formed by a material which is repellent to a substance for production of an encapsulation layer, and forming the encapsulation layer atop the second electrode and atop the contact section, the subregion remaining free of the encapsulation layer because of the protective layer.

This invention discloses methods to form a micro thin film device. The methods use release layer on a substrate, encapsulation layers, electrode formation, and forming a bank layer. The methods further use VIA's to provide access to pads. The methods also entail transfer of multiple micro thin film devices by forming micro thin film devices on a cartridge, forming a housing, using anchors, and covering a side wall of the housing with a release layer.

This invention discloses methods to form a micro thin film device. The methods use release layer on a substrate, encapsulation layers, electrode formation, and forming a bank layer. The methods further use VIA's to provide access to pads. The methods also entail transfer of multiple micro thin film devices by forming micro thin film devices on a cartridge, forming a housing, using anchors, and covering a side wall of the housing with a release layer.

Various embodiments provide a process for producing an optoelectronic component. The process includes forming a first electrode and at least one contact section atop a carrier, forming an optically functional layer structure atop the first electrode, forming a second electrode atop the optically functional layer structure, the first electrode or the second electrode being electrically connected to the contact section, applying a protective layer to at least a subregion of the contact section, the protective layer being formed by a material which is repellent to a substance for production of an encapsulation layer, and forming the encapsulation layer atop the second electrode and atop the contact section, the subregion remaining free of the encapsulation layer because of the protective layer.

A display device includes a first thin-film transistor (TFT) including a first semiconductor layer including silicon semiconductor and a first gate electrode insulated from the first semiconductor layer, a first interlayer insulating layer covering the first gate electrode, a second TFT arranged on the first interlayer insulating layer and including a second semiconductor layer including oxide semiconductor and a second gate electrode insulated from the second semiconductor layer, a second interlayer insulating layer covering the second gate electrode, a first power supply voltage line arranged on the second interlayer insulating layer, a first planarization layer covering the first power supply voltage line, and a data line arranged on the first planarization layer and at least partially overlapping the first power supply voltage line.

A light-emitting unit (140) is formed over a first surface (102) of a substrate (100). A first terminal (112) and a second terminal (132) are formed on the first surface (102) of the substrate (100), and are electrically connected to the light-emitting unit (140). A sealing layer (200) is formed over the first surface (102) of the substrate (100), and seals the light-emitting unit (140). In addition, the sealing layer (200) does not cover the first terminal (112) and the second terminal (132). A cover layer (210) is formed over the sealing layer (200), and is formed of a material different from that of the cover layer (210). In at least a portion of a region located next to the first terminal (112) and a region located next to the second terminal (132), a portion of an end of the cover layer (210) protrudes from the sealing layer (200).

A light-emitting unit (140) is formed over a first surface (102) of a substrate (100). A first terminal (112) and a second terminal (132) are formed on the first surface (102) of the substrate (100), and are electrically connected to the light-emitting unit (140). A sealing layer (200) is formed over the first surface (102) of the substrate (100), and seals the light-emitting unit (140). In addition, the sealing layer (200) does not cover the first terminal (112) and the second terminal (132). A cover layer (210) is formed over the sealing layer (200), and is formed of a material different from that of the cover layer (210). In at least a portion of a region located next to the first terminal (112) and a region located next to the second terminal (132), a portion of an end of the cover layer (210) protrudes from the sealing layer (200).

A display device includes a first thin-film transistor (TFT) including a first semiconductor layer including silicon semiconductor and a first gate electrode insulated from the first semiconductor layer, a first interlayer insulating layer covering the first gate electrode, a second TFT arranged on the first interlayer insulating layer and including a second semiconductor layer including oxide semiconductor and a second gate electrode insulated from the second semiconductor layer, a second interlayer insulating layer covering the second gate electrode, a first power supply voltage line arranged on the second interlayer insulating layer, a first planarization layer covering the first power supply voltage line, and a data line arranged on the first planarization layer and at least partially overlapping the first power supply voltage line.

A flexible lighting panel comprising a light-emitting unit with electrical contact pads on a flexible substrate; a flat flexible printed circuit board with a bendable extension tab, wherein the circuit board is located on the opposite side of the light-emitting unit from the substrate; the area of the circuit board, not including the extension tab, is the same or greater than and overlaps the emissive area of the light-emitting unit; and the circuit board has at least two flat electrical connectors in electrical contact with the contact pads of the light-emitting unit; the flat electrical connectors extending along the extension tab of the circuit board for connection to a power source. The light emitting unit can be an OLED. The extension tab can be bent so that the flat electrical connections become accessible in different orientations. The panel can be ultrathin.